测井曲线拐点在测井层序地层分析中的应用研究

在层序地层学研究中，层序界面的划分是基础和重要的环节，而利用测井资料分析可以进行层序界面划分和进行较长期基准面旋回识别。测井曲线的值是深度的函数，测井曲线的一阶导数表示了曲线变化的趋势和变化的快慢，在某一范围内，当一阶导数呈现符号转换时，相对应的深度点的测井值即为该范围内极大（极小）值；测井曲线的二阶导数则表示曲线的凹凸性，在某一范围内，当二阶导数呈现符号转换时，相对应的深度点代表了测井曲线的拐点，即反映曲线凹凸性变化的转折点，亦即地层的分界面。基于以上特点，提出利用测井曲线拐点进行层序界面划分的原理和方法，并结合岩心和录井资料，对白音查干凹陷达28井腾格尔组不同级次沉积旋回、地层垒积、旋回特征随沉积厚度变化特点和不同级次基准面旋回进行研究，最后得到该地层单井测井层序地层分析结果。     

基于轮廓线匹配的二维重迭物体的识别

本文提出一种基于轮廓线匹配的二维重迭物体的识别算法,并采用一种点模式匹配的快 速算法进行特征点序列的匹配,通过引进形状移位数的概念和利用问题中的各种约束条件,提 高了物体识别速度.     

Orientation-based unique representation for planar curves and shapes

This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations.     

国际微电子专用关键设备的现状和发展趋势（考察报告）

讲述了参观Ｓｅｍｉｃｏｎ／ｗｅｓｔ９４′展览会及考察美国和西德的５个公司、１所大学所了解到的投影光刻技术、电子束曝光技术、透镜面形测试技术的发展。     

NiTi形状记忆合金基本驱动特性

研究了预应变ＮｉＴｉ形状记忆合金的基本驱动特性，结果表明，加热和冷却过程回复力存在滞后行为；卸载过程中应力与应变具有与加热、冷却过程相关的非线性关系；卸尖力随卸载应变速率增加而降低，此外研究了预应变ＮｉＴｉ合金丝产生回复力后对外应力的响应行为。     

汛期采金船的缆绳牵拉

本文介绍了采金船渡汛时的停泊方向及采金船在洪水中可能产生拖曳力的估算方法，为了防止采金船汛期发生溜船事故，建议采用缆绳牵拉固船的措施，以保障采金船的汛期安全。     

Predicting the shape of organic crystals grown from polar solvents

A method for predicting the shape of organic crystals grown from polar solvents is presented. The model is an improvement of the recent method developed by Winn and Doherty (A.I.Ch.E. Journal 44 (1998) 2501) for predicting the shape of organic crystals grown from solvents in which the energy of adhesion at the interfaces is dominated by dispersive forces (e.g., non-polar solvents). The principal characteristic of the new method is that it can account for the role of hydrogen donor and hydrogen acceptor atoms in forming strong bonds at the interface. This technique is a first step towards predicting the shapes of organic crystals grown from polar solvents, and has been applied successfully to predict the shape of adipic acid grown from water, and succinic acid grown from water and from propanol.     

NUMERICAL SIMULATION OF STREAMBED HEAT TRANSFER

１．　ＩＮＴＲＯＤＵＣＴＩＯＮＴｈｅｓｉｍｕｌａｔｉｏｎｏｆｓｔｒｅａｍｗａｔｅｒｔｅｍｐｅｒａｔｕｒｅｉｓｓｉｇｎｉｆｉｃａｎｔｌｙｉｍｐｏｒｔａｎｔｆｏｒｔｈｅｓｔｕｄｙｏｆｎｕｍｅｒｉｃａｌｍｏｄｅｌｉｎｇｏｆｒｉｖｅｒｉｃｅｐｒｏｃｅｓｓｅｓ［１］　．Ｈｉｓｔｏｒｉｃａｌｌｙ，ｔｈｅｍａｔｈｅｍａｔｉｃａｌｍｏｄｅｌｉｎｇｏｆｔｈｅｔｒａｎｓｐｏｒｔａｎｄｆａｔｅｏｆｈｅａｔｉｎａｗａｔｅｒｂｏｄｙｈａｓｂｅｅｎｔｈｅｓｕｂｊｅｃｔｏｆｅｘｔｅｎｓｉｖｅｓｔｕｄｙｆｏｒｖａｒｉｏｕｓｒｅ…     

Suitable test structures for submicron ion beam analysis

For the precise determination of the sizes of submicron beam spots test structures with an excellent edge definition are required. For this purpose a semiconductor heterostructure consisting of an 1.62 μm GaInP epi-layer grown on (0 0 1) GaAs has been made, which provides atomically sharp edges for beam spot size measurements. Since the sample has been thinned down by standard transmission electron microscope (TEM) preparation techniques, it can be used for both PIXE and STIM. The sample has been investigated with a TEM and the ion nanoprobe LIPSION. A one-dimensional beam profile in the low current mode was determined by a STIM measurement using 2 MeV protons and yielded a FWHM of (41±4) nm, which is the smallest value reported so far for high energy nuclear micro- and nanoprobes. Furthermore we present nickel nanowhiskers produced at the GSI Darmstadt by electrochemical preparation of etched ion track membranes that have been used to obtain two-dimensional images of the shapes of submicron beam spots. For these measurements a scan over a single nickel nanowhisker having a diameter of 220 nm and a height of about 6 μm was performed.