单片LCoS光学引擎中彩色LED照明系统设计

LCoS光学引擎作为整个背投的一个要组成部分，其照明系统显著地影响着LCoS背投的性能。详细分析了影响照明效果的各个因素，并利用ZEMAX软件设计出了单片LCoS光学引擎中基于彩色LED光源的照明系统，该系统能达到较好的亮度和均匀性，满足整个光机系统的成像要求。     

松辽盆地南部深层火山岩识别及成藏条件分析

松辽盆地北部徐深1井在营城组火山岩获得油气突破后，在松辽盆地南部长岭断陷针对火山岩部署了长深1井。在长深1井营城组火山岩地层测试获4.6×105m3/d的工业气流，推算无阻流量1.5×106m3/d以上，预示松辽盆地南部深层火山岩气藏是下步勘探开发的主要领域。通过大量的火山岩岩心资料，利用岩石学、矿物学、测井和地震地层学等多学科技术，首次在松辽盆地南部建立了火山岩识别标准，在东南隆起区部署探井1口，在火山岩中见到了较好的气显示，取得很好的效果。     

环氧树脂及其增强材料回顾

本文回顾了PCB制造常用的环氧树脂及其增强材料的性能和用途。同时,还介绍了代用树脂材料和代用增强材料的最新进展,如改性环氧树脂、无卤树脂、Thermount、PTFE、氰酸酯等,并就其性能进行了探讨。     

砂岩酸化中水化硅沉淀的影响因素分析

讨论了砂岩酸化中产生水化硅沉淀的反应机理。使高岭土与1.0%HF和多种配比的HCl HF在不同温度(20-90℃)反应不同时间(10-300分钟),用等离子吸收光谱法(ICP)测定酸液中可溶性硅的浓度(mg/L),取某时段测定值的减小量为该时段水化硅沉淀生成量,讨论了多种因素的影响,得到了如下结果和结论。反应温度越高,则高岭土与HF之间的反应越快,形成水化硅沉淀的时间越短,最终生成的沉淀量越大;在HF中加入HCl(使用土酸体系)、减小土酸中HF质量分数、加大土酸中HCl、HF质量分数比,均可使生成沉淀时间延后,使最终生成沉淀量减少。60℃时300分钟沉淀量,在1.0%HF、5.0%HCl 1.0%HF、9.0%HCl 1.0%HF中分别为482、321、201mg/L。提出了在酸化设计与施工中可以采取的6条简便易行的减少水化硅沉淀量的措施。图4表1参6。     

一种零电压转换有源功率因数校正电路的研究

提出了一种基于UC3854的零电压转换有源功率因数校正(ZVT-APFC)的控制电路实现方案,介绍了ZVT电路工作原理,着重分析了由分立元件构成的辅助开关管的驱动电路,通过实验证实了驱动电路的稳定性和可靠性,并通过效率比较验证了ZVT-APFC电路的优良性能。与采用UC3855的电路相比,该电路方案具有简单、可靠、成本低等优点。     

Implicit Leadership Theories in Applied Settings: Factor Structure, Generalizability, and Stability Over Time.

The present empirical investigation had a 3-fold purpose: (a) to cross-validate L. R. Offermann, J. K. Kennedy, and P. W. Wirtz's (1994) scale of Implicit Leadership Theories (ILTs) in several organizational settings and to further provide a shorter scale of ILTs in organizations; (b) to assess the generalizability of ILTs across different employee groups, and (c) to evaluate ILTs' change over time. Two independent samples were used for the scale validation (N1 = 500 and N2 = 439). A 6-factor structure (Sensitivity, Intelligence, Dedication, Dynamism, Tyranny, and Masculinity) was found to most accurately represent ELTs in organizational settings. Regarding the generalizability of ILTs, although the 6-factor structure was consistent across different employee groups, there was only partial support for total factorial invariance. Finally, evaluation of gamma, beta, and alpha change provided support for ILTs' stability over time. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

正确选择气顶油藏高效开发模式

通过对不同类型气顶油藏的油气水分布特征及气顶和边水能量的研究分析，计算水侵量与边水体积及合理的弹性产率。提出适合气顶油藏特点的开发模式是先开采油区后开采气顶，并以唐家河油田港深18—2断块为例，证明采用该模式可以高效开发气顶油藏。图3表1参6     

减振器在自导系统结构设计中的应用

通过对减振器结构设计的理论分析，建立了减振器的数学模型，同时通过设计的模拟装置对减振效果进行了实测，效果良好。     

Oleuropein Inhibits LDL Oxidation Induced by Cooking Oil Frying By-products and Platelet Aggregation Induced by Platelet-Activating Factor

Oleuropein, a polyphenolic glucoside, constituent of olive fruit and oil, has been previously shown to exhibit, in vitro, potent properties as a biological antioxidant. In the present paper, two new properties are demonstrated in vitro as well, concerning its vascular protection activity, against the atheromatic lesion formation and its blood antithrombotic effect. Firstly, it was found that the oxidation of low-density lipoproteins (LDL), induced by different quantities of total polar materials (TPM), was inhibited by 10 μ M (final concentration) of oleuropein, revealing approx. 50% protection. Secondly, platelet-rich human plasma aggregation, induced by either the platelet-activating factor or adenosine diphospate or arachidonic acid, was inhibited by oleuropein. The 10 μ M (final concentration) of oleuropein was proven to be the most effective among the tested concentrations against LDL oxidation, while an IC₅₀=0.41 mM was calculated for its inhibitory activity against platelet aggregation induced by 0.7 μ M platelet-activating factor.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.