净水厂水泵机组高压变频调速系统的设计与运行

本文结合吉林市第三净水厂变频调速设计的实例,介绍了多电平拓扑电路原理及特点。应用变频器的节钱分析,以及提出送水泵房优化控制的想法,并且介绍了调速系统的标准配置。     

直流电源PWM级联与多电平逆变器的技术改革

介绍了一种新型的直流电源PWM级联式多电平逆变器的基本工作原理和控制方法。     

一种新颖的电压控制型逆变器并网控制方案

逆变器控制为电压源并网,其输出可直接供普通用户使用,相对于电流源并网,具有配置方便、无模式切换困扰等优点,但电流波形质量难以控制。针对这一缺陷,提出一种新颖的基于谐波电压重复控制的逆变器电压源型并网方案。通过快速谐波检测算法检测并网电抗两端的电压谐波,利用重复控制发出对应的谐波电压补偿电网谐波影响,减小并网电抗上的谐波电压差,达到降低并网电流总体谐波畸变率的目的。分析此方案的工作原理,设计控制器的关键参数和快速检测算法,并通过Matlab仿真和样机实验证明其有效性。     

Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

With the Moore's law hitting the bottleneck of scaling‐down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self‐powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual‐gate logic device based on a MoS₂ field‐effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm^–1. Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low‐power‐consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human–machine interfacing, data processing and transmission.     

Single-Component CMOS-Like Logic using Diketopyrrolopyrrole-Based Ambipolar Organic Electrochemical Transistors

Complementary circuits based on organic electrochemical transistors (OECTs) are attractive for the development of inexpensive and disposable point-of-care bioelectronic devices. Ambipolar OECTs, which employ a single channel material, could decrease the fabrication complexity and manufacturing costs of such circuits. An ideal channel material for ambipolar OECTs should be electrochemically stable in aqueous environments, afford facile ion insertion for both cations and anions, and also facilitate high and balanced electron and hole transport. In this study, triethylene glycol functionalized diketopyrrolopyrrole (DPP)-based polymer is proposed for the development of ambipolar OECTs. It is shown that DPP-based OECTs have a high and comparable figure of merit for both n- and p-type operations. Logic NOT, NAND, and NOR operations with corresponding complementary circuits constructed from identical DPP-based OECT devices are demonstrated. This study is an important step toward the development of sophisticated complementary metal–oxide–semiconductor-like logic circuits using single-component OECTs.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.     

单相并联逆变器的并网和孤岛控制策略

基于并网和孤岛控制原理,研究了两台逆变器并联系统的并网和孤岛控制策略。在并网运行时采用电流闭环控制,通过准PR调节器实现零稳态误差调节;在孤岛运行模式时采用下垂控制和虚拟电感实现功率均分和环流抑制目标,并在下垂控制基础上提出了一种混合滤波器平均功率提取方法。仿真结果表明,在孤岛运行模式下,与传统提取方法相比,采用混合滤波器平均功率提取方法能够有效抑制功率振荡,提高系统电能质量。     

低共模电压三相准单级逆变器空间矢量调制策略

由于部分光伏功率可单级传输馈入电网,三相准单级逆变器的变换效率高于传统三相两级式逆变器,但共模电压幅值和频率变化量较高.提出一种适用于三相准单级逆变器的低共模电压空间矢量调制(LCSVPWM)策略,通过舍弃部分小矢量和替换零矢量,降低了共模电压幅值和频率的变化量.此外,通过理论计算,比较了三相准单级逆变器分别采用传统空...