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21.
Based on the voltage and current fluctuating phenomenon in the arc plasma load under the negative-pulse-bias, usingthe plasma physics theory and analysis of computer simulation expatiates that the nature of plasma load in vacuumarc plasma is a capacitance  相似文献   
22.
The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl3 diffusion coating was studied in an environment of H2/H2S/H2O at 850oC. The kinetic results demonstrate that the TiAl3 coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al2O3 scale on the surface of the TiAl3‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate.  相似文献   
23.
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.  相似文献   
24.
由于干态聚合物电解质目前还不能满足聚合物锂离子电池的应用要求,人们致力于开发含液体增塑剂的聚合物电解质,包括凝胶型和微孔型两类体系。本文综述了含液聚合物电解质的最新进展,重点论述了各种新体系和新方法。  相似文献   
25.
The application of ion exchange membranes as solid polymer electrolytes (SPE) in fuel cells is state-of-the-art. This technology needs no supporting electrolyte; consequently it can be applied for electro-organic syntheses in order to save process steps. In this case the process is not predetermined to a maximized energy efficiency so that the selection of the cell design, of the electrode materials and of the operating conditions can be focused on a high selectivity of the electrode reactions. The electro-osmotic stream, which is caused by the solvation shells of the ions during their migration through the membrane, and hence is a typical property of SPE technology, has a significant effect on the electrode reactions. It generates enhanced mass transfer at the electrodes, which is beneficial for reaction selectivity. It can be influenced by the choice of, and possibly by the preparation of, the membrane. An additional remarkable advantage of SPE technology is the exceptional long durability of oxide coated electrodes. By combination of several process engineering methods stable operation of SPE cells has been realized, even for examples of non-aqueous reaction systems. Experiments up to 6000 h duration and in cells of up to 250 cm2 membrane area show the potential for industrial application.  相似文献   
26.
采用辐照接枝的方法,在高密度聚乙烯(HDPE)上接枝丙烯酸(AA)和对苯乙烯磺酸钠(SSS),从而削备出了一种含羧酸基团和磺酸基团的阳离子交换膜。详细研究了接枝体系中引入添加剂醋酸钠或氯化钠对接枝率的变化规律.实验表明,在预辐照接枝和共辐照接枝中,当AA接技PE或AA与SSS共同接枝PE时,强碱弱酸盐醋酸钠通过pH效应同离子效应对接枝率呈现复杂的影响,而中性盐氯化钠经离子对效应显著提高接枝率。  相似文献   
27.
发射尖是液态金属离子源(LMIS)的关键部件之一,其性能的优劣直接影响到整个离子源的工作稳定性。通过对系统软件和硬件的设计,开发了一套发射尖自动腐蚀装置,该装置可以对发射尖腐蚀过程中的速度和深度以及腐蚀电压进行控制,实现发射尖腐蚀工艺的重复性、可靠性,从而为液态金属离子源以及聚焦离子束系统的研制、开发提供了一个有效的辅助工具。  相似文献   
28.
Magnetic effects of direct ion implantation of Mn and Fe into p-GaN   总被引:3,自引:0,他引:3  
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.  相似文献   
29.
刘杰明  李志能 《电子器件》1994,17(3):105-109
真空微电子荧光平板显示器件的实验研究刘杰明,李志能,陈秀峰(浙江大学信息与电子工程学系)关键词:真空微电子,反应离子刻蚀一、引言近十年来,随着真空微电子学的崛起,利用微细加工技术,使真空元器件集成化和高性能化已成为可能,一种新型场致发射阵列真空荧光平...  相似文献   
30.
本文概述了离子注入过程中污染产生的原因和防止污染的措施,特别强调了对微粒污染和金属污染的防护以满足ULSI加工对离子注入的要求。  相似文献   
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