High concentration erbium doping of silicon-rich SiO2 thin films on silicon

In this work, high concentration erbium doping in silicon-rich SiO₂ thin films is demonstrated. Si plus Er dual-implanted thermal SiO₂ thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 10²¹ atoms cm⁻³, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO₂ matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO₂ films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO₂ matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.     

碱-碳酸盐反应热力学讨论

应用热力学方法探讨了温度对碱 碳酸盐反应的影响 ,反应温度升高时 ,反应的推动力减弱。对碱与碳酸盐发生反应生成沉淀时所需碱的浓度以及温度的影响进行了讨论。 2 98K ,pH≥ 10 .6时 ,碱 碳酸盐反应能发生 ,反应温度升高 ,碱 碳酸盐反应所需碱的浓度相应增大。对氢氧化锂与碳酸盐反应可能生成碳酸锂沉淀时溶液的碱的浓度作了计算 ,2 98K ,pH≥ 13.1时 ,氢氧化锂与碳酸盐反应除生成水镁石和方解石外还能生成碳酸锂沉淀 ,反应温度升高时 ,反应生成碳酸锂沉淀所需碱的浓度变化不大     

Study of Lateral Spread of Ions Emitted from 2.3 kJ Plasma Focus with Hydrogen and Nitrogen Gases

The characteristics of ion beams of hydrogen and nitrogen with different filling pressures emitted from the plasma focus device of 2.3 kJ energy are investigated. CR-39 SSNTDs are employed for the registration of tracks of ions. The exposed detectors are etched in 6N NaOH solution at 70°C and then examined with an optical microscope. The ion flux is estimated to be of the order of 10^5–6 tracks/cm². The flux with the radial position does not exhibit any regular pattern of variation.     

A simplified cascade current‐source inverter interconnected to a single‐phase three‐wire distribution system and its application to electric energy storage systems with batteries

A novel current source inverter system interconnected to the single‐phase grid is proposed. It has the same construction as the conventional three‐phase current source inverter that is interconnected to the single‐phase three‐wire distribution system. Though the proposed circuit has no output transformer, it can be equivalently performed as the single‐phase double cascade inverter by diverting the pole transformer in the utility system. By controlling the appropriate scheme, the output currents can be obtained as the five‐level waveforms and their distortions can be decreased sufficiently. It is applied to the interactive electric energy storage system with batteries and the basic discharging characteristics are discussed experimentally. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 150(2): 50–61, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10380     

抽余C_4烃中异丁烯催化逆流水合制叔丁醇

采用大颗粒离子交换树脂催化剂,在φ100mm×10m的反应器中进行了异丁烯催化逆流水合制叔丁醇的中间试验。考察了反应温度、水油体积比和抽余C4烃的流速等对异丁烯转化率的影响。试验结果表明,异丁烯催化逆流水合制叔丁醇的适宜操作条件为:反应温度80~90℃,水油体积比为4~5,抽余C4烃的流速为0.45~0.55mm/s。在此条件下,异丁烯的转化率可达88.8%。工业装置运转结果表明,异丁烯转化率大于75%。     

内热式液态合金离子源

本文介绍了一种实用的液态合金离子源结构，我们利用本结构研制成功了Ａｕ－Ｓｉ和Ａｕ－Ｓｉ－Ｂｅ液态合金离子源，测出了它们的发射特性。     

Macroscopic model for multispecies ion-exchange kinetics

A model for multispecies ion-exchange kinetics based on the Nernst-Planck equation is suggested. It is analyzed in comparison with the “locally-determinate” model described by Hwang and Helfferich [1]. The model makes possible simple computation. The conditions for the occurrence of unusual kinetic curves with a maximum are clarified. The proposed model is developed for different types of kinetic problems and verified by the experimental investigation of a kinetics in ternary systems.     

离子注入硅的线源非相干光瞬时退火温度计算

本文利用高温模型,计算了在我们的实验条件下对离子注入硅进行线源非相干光瞬时退火的退火温度,并与实验结果比较,两者符合得较好。     

Na+ and/or Cl− Toxicities Determine Salt Sensitivity in Soybean (Glycine max (L.) Merr.), Mungbean (Vigna radiata (L.) R. Wilczek), Cowpea (Vigna unguiculata (L.) Walp.), and Common Bean (Phaseolus vulgaris L.)

Grain legumes are important crops, but they are salt sensitive. This research dissected the responses of four (sub)tropical grain legumes to ionic components (Na⁺ and/or Cl⁻) of salt stress. Soybean, mungbean, cowpea, and common bean were subjected to NaCl, Na⁺ salts (without Cl⁻), Cl⁻ salts (without Na⁺), and a “high cation” negative control for 57 days. Growth, leaf gas exchange, and tissue ion concentrations were assessed at different growing stages. For soybean, NaCl and Na⁺ salts impaired seed dry mass (30% of control), more so than Cl⁻ salts (60% of control). All treatments impaired mungbean growth, with NaCl and Cl⁻ salt treatments affecting seed dry mass the most (2% of control). For cowpea, NaCl had the greatest adverse impact on seed dry mass (20% of control), while Na⁺ salts and Cl⁻ salts had similar intermediate effects (~45% of control). For common bean, NaCl had the greatest adverse effect on seed dry mass (4% of control), while Na⁺ salts and Cl⁻ salts impaired seed dry mass to a lesser extent (~45% of control). NaCl and Na⁺ salts (without Cl⁻) affected the photosynthesis (P_n) of soybean more than Cl⁻ salts (without Na⁺) (50% of control), while the reverse was true for mungbean. Na⁺ salts (without Cl⁻), Cl⁻ salts (without Na⁺), and NaCl had similar adverse effects on P_n of cowpea and common bean (~70% of control). In conclusion, salt sensitivity is predominantly determined by Na⁺ toxicity in soybean, Cl⁻ toxicity in mungbean, and both Na⁺ and Cl⁻ toxicity in cowpea and common bean.     

PREPARATION OF TiN FILMS BY N_2 ASSISTED Xe~+ ION BEAM ENHANCED DEPOSITION AND THEIR MECHANICAL PROPERTIES

A new method for preparation of hard TiN films has been developed by using electronbeam evaporation-deposition of Ti and bombardment with 40 keV Xe~+ ion beam ina N_2 gas environment.The synthesized TiN films were superior to PVD and CVDones in respects of improved adhesion to substrate and low preparing temperature.Theyexhibited good wear resistance and high hardness up to 2200 kg/mm~2.Some industrialapplications have been reported.