四辊热轧机支承辊表面裂纹的修复

本文介绍了用局部不接触法修复轧机支承辊表面裂纹的方法。实践证明,这种方法操作简单、节省金属、效果良好、可在现场进行,而且具有较大的经济效益。     

生长条件对KDP晶体中散射颗粒的影响

利用透射电子显微技术对不同条件下生长的KDP晶体中包裹物进行了观察并测量了其相应尺寸。结果表明，晶体中的生长缺陷、pH值、生长速度和杂质与KDP晶体散射颗粒的形态存在密切关系。     

Surface Defect Engineering in 2D Nanomaterials for Photocatalysis

2D Nanomaterials, with unique structural and electronic features, have shown enormous potential toward photocatalysis fields. However, the photocatalytic behavior of pristine 2D photocatalysts are still unsatisfactory, and far below the requirements of practical applications. In this regard, surface defect engineering can serve as an effective means to tune photoelectric parameters of 2D photocatalysts through tailoring the local surface microstructure, electronic structure, and carrier concentration. In this review, recent progress in the design of surface defects with the classified anion vacancy, cation vacancy, vacancy associates, pits, distortions, and disorder on 2D photocatalysts to boost the photocatalytic performance is summarized. The strategies for controlling defects formation and technique to distinguish various surface defects are presented. The crucial roles of surface defects for photocatalysis performance optimization are proposed and advancement of defective 2D photocatalysts toward versatile applications such as water oxidation, hydrogen production, CO₂ reduction, nitrogen fixation, organic synthesis, and pollutants removal are discussed. Surface defect modulated 2D photocatalysts thus represent a powerful configuration for further development toward photocatalysis.     

Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations

AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.     

Low‐Cost Post‐Growth Treatments of Crystalline Silicon Nanoparticles Improving Surface and Electronic Properties

Freestanding silicon nanocrystals (Si‐ncs) offer unique optical and electronic properties for new photovoltaic, thermoelectric, and other electronic devices. A method to fabricate Si‐ncs which is scalable to industrial usage has been developed in recent years. However, barriers to the widespread utilization of these nanocrystals are the presence of charge‐trapping defects and an oxide shell formed upon ambient atmosphere exposure hindering the charge transport. Here, we exploit low‐cost post‐growth treatment routes based on wet‐etching in hydrofluoric acid plus surface hydrosilylation or annealing enabling a complete native oxide removal and a reduction of the defect density by up to two orders of magnitude. Moreover, when compared with only H‐terminated Si‐ncs we report an enhancement of the conductivity by up to a factor of 400 for films of HF etched and annealed Si‐ncs, which retain a defect density below that of untreated Si‐ncs even after several months of air exposure. Further, we demonstrate that HF etched and hydrosilylated Si‐ncs are extremely stable against oxidation and maintain a very low defect density after a long‐term storage in air, opening the possibility of device processing in ambient atmosphere.     

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

It is believed that promoting the fraction of ferroelectric orthorhombic phase (o-phase) through O-poor growth conditions can increase the spontaneous polarization of HfO₂ and (Hf,Zr)O₂ thin films. However, the first-principles calculations show that the growth may be limited by the easy formation of point defects in the orthorhombic and tetragonal phases of HfO₂, ZrO₂, and (Hf,Zr)O₂. Their dominant defects, O interstitial (O_i) under O-rich conditions and O vacancy (V_O) under O-poor condition, have low formation energies and quite high density (10¹⁶–10¹⁹ cm⁻³ for 800–1400 K growth temperature). Especially, O_i has negative formation energy in tetragonal HfO₂ under O-rich condition, causing non-stoichiometry and limiting the crystalline-seed formation during o-phase growth. High-density defects can cause disordering of dipole moments and increase leakage current, both diminishing the polarization. These results explain the experimental puzzle that the measured polarization is much lower than the ideal value even in O-poor thin films and highlight that controlling defects is as important as promoting the o-phase fraction for enhancing ferroelectricity. The O-intermediate condition (average of O-rich and O-poor conditions) and low growth temperature are proposed for fabricating HfO₂ and (Hf,Zr)O₂ with fewer defects, lower leakage current, and stronger ferroelectricity, which challenges the belief that O-poor condition is optimal.     

Ultrathin Conductive Interlayer with High-Density Antisite Defects for Advanced Lithium–Sulfur Batteries

Lithium–sulfur (Li–S) batteries are promising next-generation rechargeable batteries due to thier high energy density, low cost, and environmental friendliness. However, the extremely low electrical conductivity of sulfur and the dissolution of polysulfides limit their actual electrochemical performances, especially in the case of high sulfur mass loading. Here, a new strategy based on intrinsic point defects of materials is proposed to simultaneously enhance the electrical conductivity of active material and regulate the migration of polysulfides. Taking advantage of ultrathin and lightweight Bi₂Te_2.7Se_0.3 (BTS) interlayers with high-density antisite defects on the separator surface, the Li–S battery with BTS interlayer shows a capacity of 756 mAh g⁻¹ at 2C and a low capacity decay rate of 0.1% over 300 cycles. The BTS interlayer can not only enhance the active material utilization but also improve capacity retention. The defect engineering strategy accompanied with facile method is promising for the development of advanced Li–S batteries for practical application.     

CZ-Si单晶中流动图形缺陷的本性探究

CZ-Si单晶中的流动图形缺陷(FPDs)是否属于空洞型缺陷,目前尚有争议.通过光学显微镜和原子力显微镜对其结构进行了细致地研究.实验发现,FPDs外形如抛物线,在硅片中呈内高外低分布,并且在其顶端附近还存在一单型或双型的八面体空洞,其尺寸、结构及类型与COPs、LSTDs缺陷都非常相似.所有这些都表明,FPDs为空洞型缺陷.本次实验结果将有助于对空洞型缺陷本性及其消除机制的进一步研究.     

光电耦合器件g-r噪声模型

在宽范围偏置条件下，测量了光电耦合器件的g-r（产生-复合）噪声．实验结果表明，随着偏置电流的增加，g-r噪声逐渐向高频移动，其噪声幅值呈现先增加后减小的变化规律．通过测量前级噪声和后级噪声，发现光电耦合器件g-r噪声来源于后级的光敏三极管．基于载流子数涨落机制，建立了一个光电耦合器件g-r噪声的定量分析模型．实验结果和本文模型符合良好．     

原子氢辅助分子束外延生长以GaAs材料性能的改善

利用深能级瞬态谱（ＤＬＴＳ）研究了常规分子束外延和原子氢辅助分不外延生长的掺杂Ｓｉ和Ｂｅ的ＧａＡｓ同质结构样品中缺陷的电这特性。发现原以辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低,这可解释为生长过程中原子对缺陷的原位中和与钝化作用。