超高分子量聚乙烯的辐照效应

通过密度测定和ＤＳＣ热分析，观测了超高分子量聚乙烯的辐射效应。实验结果表明：在吸收剂量０—１．１３ＭＧｙ范围内，密度随吸收剂量的增加而增大，熔化热和熔点也有所增加，特别是在低剂量范围内增加十分明显。以上结果都说明，超高分子量聚乙烯在辐照过程中，结晶在完善或有新的结晶形成     

精细功能陶瓷的若干发展趋势

概括了分析自９０年代初以来精细功能陶瓷的发展趋势，提出了一些相关的研究领域。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

抗洪抢险措施及效果

结合“９８”抗洪抢险实例，对多种险情作了具体分析，通过汛后调查，对抗洪抢险消险措施和效果进行了总结，为今后进一步做好防洪消险工作提供了经验。     

纤维增强铝基复合材料变形损伤过程声发射研究

采用声发射（ＡＥ）技术，通过测定ＡＥ事件数、幅度和持续时间等发射特征参数以及恒载 Ｆｅｌｉｅｉｔｙ效应，对ＳｉＣ／Ａｌ和Ｃ／Ａｌ两类束丝纤维增强铝昨合在拉伸变形过程中的损失失效特征进行了分析探讨。实验结果表明，纤维种类、界面状况对复合材料损伤过程有着显著的影响，声发射技术是表征这类复合材料损伤特征很有潜力的方法。     

MgO在含铅PTCR陶瓷中的作用

研究了ＭｇＯ加入到含铅ＰＴＣＲ陶瓷中的作用。用碱土金属Ｍｇ２＋对（Ｂａ，Ｐｂ）ＴｉＯ３掺杂，在１２４０～１３００℃空气中烧结，获得工艺性能良好，烧结温度较低，电性能优良的ＰＴＣＲ陶瓷材料。试验结果表明：ＭｇＯ的加入降低了含铅ＰＴＣＲ陶瓷的烧结温度，抑制了ＰｂＯ的挥发。     

机器人腕力传感器的动态负载效应

本文从时域和频域两方面研究机器人腕力传感器在加载情况下的动态响应，进行动态建模和频谱分析，探讨负载效应的影响。     

运放滞回比较电路在差动式温度控制中的应用研究

从差动式温度控制的角度研究了两种由集成运算放大器构成的滞回比较器（基型和交叉耦合型）的传输特性，发现它们均能用作闭环差动式控温单元，并都具有在温度设置点转换速度快、抗干扰能力强、控制单元设计简单等优点。分析和比较了这两种控温单元的控制参数的调节性能和参数的稳定性，获知后者的预置温度（Ｔｈ或ＴＬ）和差动温度范围（△Ｔ）的设置值均能各自独立地调节，且系统的Ｔｈ，ＴＬ，△Ｔ的实际值几乎仅决定于设置电路本身，因而显得更为优越。文中还讨论了应用中的有关问题，并给出了相关的应用实例。     

A method of identifying latent human errors in work systems

Work system improvements are implemented in various manufacturing processes to prevent problems caused by human errors. However, they are almost always applied to problems which have already occurred. This paper examines a method of identifying latent human errors existing within the work systems beforehand. A procedure for applying failure mode and effect analysis to this identification problem was defined based on over 1000 empirical errors: a work system decomposition criterion and fundamental error modes for listing latent human errors, and then applied to three practical manufacturing processes in order to evaluate its effectiveness.     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.