Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions

Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In_1−xGa_x)(Se_1−yS_y)₂ based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 2³ full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82 nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17 nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21 nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum _value of 42 μΩ cm for Mo films deposited at 200 W DC power.     

用于4H-SiC雪崩光电探测器p型欧姆接触的研究

对4H-SiC雪崩光电探测器的Ti/Al/Au p型欧姆接触进行了详细的研究。通过线性传输线模型(LTLM)测得经930℃退火后欧姆接触的最小比接触电阻为5.4×10~(-4)Ωcm~2。分别用扫描电子显微镜(SEM)、俄歇电子能谱(AES)、X射线光电子能谱(XPS)和X射线衍射谱(XRD)对退火前后的表面形貌、金属之间以及金-半接触界面之间相互反应及扩散情况进行测试与分析,发现了影响欧姆接触性能的主要原冈。对采用此欧姆接触制备的4H-SiC雪崩光电探测器进行测试,发现器件的击穿电压约为-55 V,此时其p型电极处的电压降仅为0.82 mV,可以满足4H-SiC雪崩光电探测器在高压下工作的需要。     

植物水分在异质成核时冰点的计算

应用热力学原理定量分析了植物水分异质成核的结冰机理：植物体微小空腔内的水分在结冰时,腔壁起着凝结核的作用,即存在异质成核结冰过程．水分异质成核的温度（即冰点） Ｔ与球形腔半径 Ｒ及冰水对墙壁的浸润性能的差异（用接触角θ表示）之间符合函数关系 Ｔ＝ Ｔ（ Ｒ,ｃｏｓθ）．对于每一个ｃｏｓθ值,当 Ｒ取某一确定值 Ｒ时,冰点达到最低值 Ｔｍ ｉｎ, Ｔｍ ｉｎ可达－ ３６ ℃．     

一种新型电极的设计研究

通过分析已有老式电极存在的问题,提出了一种导体和浮芯缆一体化的电极设计方案。对新、旧电极诸参数分别进行了数值计算,按照新电极接触电阻必须小于老电极接触电阻和浮力平衡的策略,确定了电极的设计参数。然后根据设计参数制作电极模型,进行了缩比试验。经过对试验结果进行分析,新电极在电场强度分布、抗腐蚀性等诸多方面优于老电极。文中方法对电极设计工作具有一定参考价值。     

Vibration Control of High-speed Cannonball Transport Mechanism Driven by Impact

A method is presented to control the vibration of high-speed cannonball transport mechanism due to the reduction of its weight, which adhere a nonlinear Zn-27Al-1Cu damping alloy layer and a constraint layer partly to the part of mechanism driven by impact. Based on the equivalent viscous damping theory and using curve fitting to describe the rule of the dissipation factor of damping alloy changing with stress, the nonlinear constitutive relation of Zn-27Al-1Cu damping alloy is given. The nonlinear spring damping contact model is adopted to describe the contact force of the clearance joint.Based on the nonlinear finite element contact theory, the outer impact contact force between the mechanism and its working environment is analyzed, and a coupled dynamic model of structural impact and mechanism motion with clearance joint is put forward. A dynamic model is established for the cannonball transport mechanism partly adhering Zn-27Al-lCu damping alloy layer and constraint layer under complex impact conditions. At last, the feasibility of the method presented is proved by numerical simulation.     

Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process

We report the use of a Mo barrier layer within Ni/Au-Ge based ohmic contacts to GaAs for eliminating an etch stop reaction that occurs during Cl-based dry etching of heterojunction bipolar transistors. With conventional Ni/Au-Ge/Ag ohmic contacts, chlorinecontaining discharges produce a passivating layer of AgCl on the semiconductor surface, preventing further etching. This layer is absent when the Ag in the contact is replaced with Mo. The Mo has several advantages over other diffusion barrier layers and yields contacts with excellent adhesion, smooth morphology, and sharp edge definition. The average contact resistivity of these contacts ton ⁺-GaAs(n = 6 × 10¹⁸ cm^-3) was 0.074 ohm-mm, which is lower than the typical contact resistivity of conventional Ni/Au-Ge/ Ag metallization (0.11 ohm-mm).     

铝电解电容器用低压箔接触电阻超标分析

通过金相分析和铝箔铆接后的接触电阻对比,研究了铝箔的腐蚀形貌、铝箔表面粉状物、氧化膜厚度、引线质量、铆接工序控制等对接触电阻的影响。提出了降低接触电阻的几点建议:①采用多级变频复合腐蚀工艺,以得到“乔木状”的蚀孔。②改进处理工艺,减少粉状物的产生。③调整工艺控制条件,改善腐蚀形貌。     

LTE-Advanced CoMP技术的研究

从CoMP技术标准化进展入手,对下行CoMP技术基本原理进行了研究,针对几种典型的CoMP方案进行了对比分析,并针对3GPP定义的场景1给出了联合传输情况下的初步仿真结果。     

两步合金法制作p-GaN高反电极

利用两步合金法获得了能与p-GaN形成良好欧姆接触的高反射电极.电极的构成采用透明电极 高反射金属方案,厚的Ag层或Al层覆盖在合金后的Ni/Au上以提高电极的反射率,以Pt和Au作为覆盖层,可有效地防止Ag的氧化和团聚,短时间的热处理有助于Ag基电极反射率的提高.可靠性测试表明Ag基电极的稳定性较好,对于Al基电极,热处理后反射镜上出现暗斑,导致其反射率的下降.最终获得了波长在460nm处反射率为74%的Ag基高反射电极.     

浅谈计算机网络技术在电子信息工程中的应用

本文将围绕计算机网络技术与电子信息工程的概念与联系,针对计算机网络技术在电子信息工程中的具体应用展开全面论述.