TiSiW12O40/TiO2催化合成丙酸正丙酯

研究了固载杂多酸盐TiSiW12O40/TiO2催化丙酸与正丙醇的酯化反应，探讨了催化剂用量，反应时间及醇酸摩尔比对酯收率的影响。当醇酸摩尔比为1.3:1，催化剂的量为醇酸总质量的1.5%。反应时间为1.0h，酯产率可达71.4%以上，采用该催化剂合成丙酸正丙酯不仅酯化反应温度低，反应时间较短，催化剂用量少，而且可较好地回收利用，可降低成本；因此，TiSiW12O40/TiO2是合成丙酸正丙酯的优良催化剂，具有良好的应用前景。     

浮栅技术及其应用

介绍了浮栅技术的基本原理及应用情况。井对2种应用了浮栅技术的典型器件-浮栅MOS晶体管和神MOS晶体管做了详细介绍，分析了他们的基本结构和工作原理，以及建立浮栅MOS晶体管的等效模型，并说明了他们的应用情况及存在的不足。     

^17O系统的R矩阵分析

采用多道多能级R矩阵理论,全面系统地分析~(17)O系统中10.5 MeV激发能以下有关~(16)O(n,n)~(16)O·~(16)O(n,a)~(13)C和~(13)C(a,a)~(13)C的全部实验数据。有关~(16)O的中子反应截面计算值被收入中国评价数据库CENDL-2和美国的评价数据库ENDF/B-6。对在R矩阵分析中如何确定本底、道半径和边界条件等问题予以讨论。     

Importance of the choice of the profile model for ap-n junction in the location of deep levels

The energy levels introduced by Pt in silicon have been measured in a non-abruptp ⁺-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E _c -E _T = 0.22 eV with acceptor character andE _T -E _v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE _c -E _T = 0.34 eV was found instead of or besides a donorlike levelE _T -E _v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE _c −E _T = 0.34 eV located in then-side of the junction.     

La distribucion hipergeometrica como binomial de poisson

Resumen En este trabajo demostramos que toda distribución hipergeométricaH(N, X,n) puede ser descrita como suma de pruebas independientes con probabilidades de éxito distintas entre sí. Tal distribución recibe habitualmente el nombre de binomial de Poisson o binomial generalizada.      

RF antenna analysis with the ICANT code

The ICANT code computes self-consistently the surface current distribution on a 3D antenna model radiating in a plasma or vacuum and has been used to analyze the coupling properties of various antenna models. In this work it is used to assess near-fields generated by different versions of the TCABR (Tokamak Chauffage Alfvén wave heating experiment in Brazil) antenna as well as coupling properties of the TEXTOR tokamak in Forshungszentrum Jülich. Two different strap models planned for the TCABR antenna are shown to be practically equivalent in terms of maximum electric field. Textor coupling calculations are close to experimental values.     

双模轮胎硫化机结构的优化设计

我们在双模轮胎硫化机结构的优化设计中,提出了一种ANSYS与导重准则相结合的优化方法。该方法收敛快,一般只需约5至7次优化迭代计算即可得到十分显著的优化效果,大大提高了优化效率与设计质量。     

表达式句法分析及求值算法在优化设计中的应用

针对优化设计技术在机械工程领域的使用特点提出了一种应用表达式分析与求值原理以避免对每个优化模型或实例均需编程求解的解决方法,论述了该方法的要求、原理、实现过程及应用程序框架。     

Pulsed field gradient n.m.r. measurements and theoretical interpretation of the self-diffusion of polystyrene in solution

The self-diffusion coefficients of polystyrene dissolved in C₆D₆ were measured by means of pulsed field gradient n.m.r.. The dependence on the molecular weight was of the power of -2 in accordance with the reptation model. The concentration dependence was theoretically calculated within the blob concept which shows that in the crossover region the self-diffusion coefficient is determined only by the blob dimensions and the monomeric friction coefficient is constant. The calculated concentration dependence agrees well with that observed by the authors.     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.