纳米晶合金片铸炉真空调节的PID控制算法程序设计及其参数整定

真空偏压控制系统由计算机系统、真空调节阀、真空偏压泵等部件构成,其中真空调节阀是设备的关键部件之一。根据纳米晶合金磁粉真空连续片铸工艺要求和真空比例调节阀的性能,确定了积分项分离的位置型数字比例-积分-微分(PID)控制算法。基于监控构成(MonitorandControlGeneratedSystem,MCGS)组态软件系统,设计了真空调节阀控制算法程序及人机界面,工程法整定PID参数。运行后真空度控制精度达0.35%,符合生产要求。     

On the Relationship Between the Grain Size and Gas-Sensitivity of Chemo-Resistive Metal-Oxide Gas Sensors with Nanosized Grains

In this work we elaborate the effect of grain size on the sensitivity of chemo-resistive metal-oxide gas sensors with nanosized grains. The effective carrier concentration in nanocrystalline SnO₂ sensors with various grain sizes is calculated as a function of the surface state density. This involves numerical computation of the charge balance equation (i.e., the electroneutrality condition) using approximated analytical solutions of Poissons equation for small spherical crystallites. The calculations demonstrate a sharp decrease in the carrier concentration when the surface state density reaches a critical value that corresponds to a condition of fully depleted grains, namely when nearly all the electrons are trapped at the surface. Assuming that the variations in the surface state density are induced by surface interactions with the gas phase, these calculations enable to simulate the response curves of nanocrystalline SnO₂ gas sensors. The simulations show that the conductivity increases linearly with decreasing trapped charge densities, and that the sensitivity to the gas-induced variations in the trapped charge density is proportional to 1/D, where D is the average grain size.     

Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2θ≈47° and the exponent of crystalline plane of nc-Si in the film was (2 2 0). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B₂H₆) doping ratio in silane (SiH₄), silane dilution ratio in hydrogen (H₂), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters.     

Formation of Nanocrystalline Structure of TaSi2 Films on Silicon

The nanocrystalline structure and mechanical properties of TaSi₂ films deposited by sputtering of TaSi₂ target have been investigated by x-ray diffraction, cross-sectional transmission electron microscopy (TEM), four-point electrical resistance measurement, and cyclic depth-sensitive nanoindentation. The purpose of this work is to study the formation of nanocrystalline structure in TaSi₂ films on a silicon substrate. As revealed, a decrease in the deposition rate leads to an increase in the O and C impurity content in the films. Contamination of the film by O and C atoms during a low-rate deposition causes the formation of an amorphous phase in the deposited films. Upon annealing, the amorphous structures crystallize into mixtures of disilicide and a small amount of polysilicide, i.e. TaSi₂ and Ta₅Si₃, respectively. After annealing at 970 K, the formation of a nanocrystalline structure with a grain size about 10 nm takes place in the film produced at a deposition rate of 0.2 nm/sec. The formation of a nanocrystalline structure changes drastically the mechanical properties of the film. The nanohardness and elastic modulus increase significantly, and the film becomes brittle and overstressed. After deposition in the film produced at the 1 nm/sec deposition rate mainly Ta disilicide and the amorphous phase are observed. After annealing, the amorphous phase near the Si substrate coexists with column-shape grains of Ta disilicide of size 150 × 500 nm. The annealed thin film becomes nonuniform in thickness. The nanohardness and elastic modulus increase.     

机械合金化制备纳米晶Fe-Si合金的研究

采用Fe-6．5％Si合金粉与Si-22％Fe合金粉末，经机械合金化制备了Fe-13．95％Si固溶体合金。由碰撞频率、速率与球磨工艺条件的理论关系推导出了球料比的最佳值。利用XRD、SEM和EDX手段对球磨后的Fe—Si粉体进行了结构、形貌及成份表征。结果表明：混合粉体球磨12h可实现机械合金化，合金化的粉体为α—Fe（Si）过饱和固溶体，颗粒尺寸为0．5～15μm，显微组织为纳米晶结构，平均晶粒尺寸约为18nm。     

高能球磨法制备纯铝纳米晶材料的研究

对应用高能球磨制备纯铝纳米晶材料及其硬度进行了研究分析。结果表明：室温高能球磨可制备纯铝纳米晶材料，球磨12h后平均晶粒尺寸为34nm。纳米晶纯铝的显微硬度随球磨时间的延长先升高后降低，然后趋于稳定。球磨12h制备的纯铝纳米晶材料的硬度最高，可以达到111HV。样品在不同温度下退火后，硬度随温度的升高先升高后下降，并且在200℃退火时发生了低温退火的硬化效应。     

纳米晶Al-Cu-Mg合金的微观组织与力学性能研究

以工程实际中应用较广的Al-Cu-Mg铝合金作为研究对象, 用Al-Cu-Mg铝合金气体雾化粉末作为原材料, 通过低温液氮球磨获得纳米晶后, 再经真空热压和热挤压制备了致密的大块体纳米材料. 通过力学性能测试, 挤压态的纳米晶Al-Cu-Mg块体材料抗拉强度达470 MPa, 经过T4处理后, 抗拉强度达到590 MPa, 远远超过常规方法制备的Al-Cu-Mg铝合金抗拉强度. 对纳米晶Al-Cu-Mg块体材料进行微观组织观察, 分析了材料强度提高的原因.     

（FexCo1-x）73.5Cu1Nb3Si13.5B9合金高温磁性的研究

研究了460～640℃等温退火后纳米晶（FexCo1-x）73.5Cu1Nb3Si13.5B9（x=0.5，1）合金的初始磁导率麒随温度变化。与双相纳米晶Fe73.5Nb3Si13.5B9合金相比，（Fe0.5Co0.5）73.5Cu1Nb3Si13.5B9合金室温下的磁导率降低，但晶化相和非晶相居里温度明显升高，并显著提高了合金在高温下的软磁性能。初步探讨了改善纳米晶合金高温磁性的机理。     

Cu纳米晶块体的制备及纳米晶粒长大动力学研究

采用高能球磨的方法制取金属纳米晶粉末，然后利用放电等离子烧结（SPS）技术制备出金属纳米晶块体材料。设计系列实验研究金属纳米晶材料的晶粒长大行为，获得了纳米晶粒长大的动力学规律。根据已有的工作基础和对实验结果的深入分析，确定动力学参数对稳定相晶粒长大行为的影响。实验发现了高能球磨配合SPS技术制备的Cu纳米晶块体发生快速晶粒长大的临界温度，并结合纳米晶界过剩体积与过剩自由能的关系，分析了纳米晶粒组织的能量因素对晶粒长大行为及动力学的影响。     

纳米晶Tl8SnSe6微波溶剂热合成与结构

以乙二胺为有机溶剂,TlCl,SnCl2·H2O和Se粉为原料,采用微波溶剂热法制备纳米晶Tl8SnSe6.通过扫描电镜能谱分析(EDS)、 X射线粉末衍射(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)等手段表征其组成及其结构,探讨了微波溶剂热法合成纳米晶的机制,并合成新纳米晶Tl8SnSe6.紫外可见吸收光谱(UV-Vis)表明禁带宽度为2.52 eV,具有优良的半导体性能.实验表明微波溶剂热法是合成多元金属硒化物无机功能材料的理想途径.