Single nanowire assembled by liquid dielectrophoresis for on-chip technologies

ABSTRACT

Study on dynamic tensile properties and atomic chain fabrication of single nanowire, for understanding its dynamic tensile properties and unique physical properties of atomic chain to fabricate atom scale devices, is one of frontier research issues in nano-scale science. However, how to assemble single nanowire on a tensible micro-structure becomes one of the most difficult problems, which severely restricts the development of this research field. In this paper, after the ultrahigh tensible microelectrode chip is fabricated by micro-electromechanical systems technology, hexamethyldisilazane is utilized to improve hydrophobicity of the chip, and then a micro-droplet dielectrophoresis experimental platform and technology is developed to assemble single nanowire on the sensible microelectrode. Experimental results show that accurate and efficient assembly of single Cu nanowire is realized, which contributes greatly to the further research of dynamic tensile properties and atomic chain fabrication. And for guiding the assembly experiments, finite element technology is also utilized to analyze the local micro electro-field around the microelctrodes during dieletrophoresis experiments.     

Structural evolution of low-dimensional metal oxide semiconductors under external stress

Metal oxide semiconductors (MOSs) are attractive candidates as functional parts and connections in nanodevices. Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires (NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed.     

氨化Ga2O3/Mg薄膜制备簇状GaN纳米线

通过在1050°C时氨化Ga2O3/Mg薄膜制备出簇状GaN纳米线。用X射线衍射(XRD),傅里叶红外吸收光谱(FTIR)扫描电子显微镜(SEM)和高分辨电子显微镜(HRTEM)对样品进行测试分析。结果表明,GaN纳米线为六万纤锌矿结构单晶相并且成族生长,直径在200～500nm米左右,其长度可达5～10μm。几乎所有纳米线的直径均有逐渐缩小的趋势。对Mg膜的作用进行了初步的分析。     

利用扫描探针显微镜研究Co量子有序阵列的特性

采用交流电化学沉积法,在小孔径的阳极氧化铝模板里,成功制备了Co磁纳米线有序阵列。通过机械抛光、化学抛光工艺,样品表面平整度可达到±10nm/μm2左右。采用透射显微镜(TEM) 扫描探针显微镜(SPM)观察了样品的表面形貌、Co纳米线的微观形貌和与形貌对应的磁畴图像。结果表明,纳米磁记录阵列膜里的每一根Co纳米线均为单畴结构,磁畴分布非常有序且与氧化铝微孔的形貌分布一一对应,畴的大小随磁力针尖离样品的高度不同略有变化;在一定的高度范围内,磁针离样品的高度和扫描速度不影响观察到的磁畴分布。样品在2T的外场下磁化后,大多数磁矩发生了反转。发现了相邻位之间磁畴的磁矩取反现象,这种阵列膜具有量子磁盘的原型结构。制备的阵列结构孔密度可达1011/cm2,如果每一个单畴存储二进制单元的一个信息位,相应的存储密度应达100Gbit/in2以上。该纳米磁记录阵列,有望成为新型的超高密度量子磁盘。     

An Electroactive and Transparent Haptic Interface Utilizing Soft Elastomer Actuators with Silver Nanowire Electrodes

An electroactive and transparent haptic interface having a rectangular void pattern creates tunable surface textures by controlling the wavelength and amplitude of independent void‐lines. To make an active tactile surface, the transparent haptic interface employs a silver nanowire (AgNW) electrode to be compliant with the deformed elastomer surface. Here, the dielectric elastomer is newly blended with polydimethylsiloxane and Ecoflex prepolymer to simultaneously control the mechanical stiffness and transparency. The relative resistance of the AgNW electrode on a single void line is nearly unchanged under bending test, confirming the high stretchability and conductivity of the nanowire‐networked electrode. The optical transparencies are 92–85%, depending on the ratio of the Ecoflex solution. Transparency values decreas by 7 and 16% after coating with AgNWs at densities of 30 and 140 mg m^?2, respectively. Using EP31, the void line is deformed by 90 µm under a field intensity of 13.0 V µm^?1. The haptic surface is successfully controlled by applying voltage, which produces four different surface textures, from relatively smooth to rough feeling, depending on the distance between deformed void lines. This haptic interface can be applied to diverse display systems as an external add‐on screen and will help to realize programmable surface textures in the future.     

Al/SiO_2/Si表面Al_2O_3纳米图形的AFM阳极氧化制备方法

采用AFM阳极氧化方法,在控制AFM探针尖端电压和扫描方式的条件下,在Al/SiO2/Si表面制备了Al2O3纳米图形,图形最小尺寸为70nm.研究了表面吸附水层存在下AFM阳极氧化机理.实验结果表明AFM阳极氧化是制备金属氧化物半导体纳米器件的较好方法     

Top down fabrication of long silicon nanowire devices by means of lateral oxidation

The process for the fabrication of devices based on a single silicon nanowire with a triangular section is presented and discussed. The top down fabrication process exploits the properties of silicon anisotropic etching for the realization of very regular trapezoidal structures, that can be uniformly reduced in controlled way by means of lateral oxidation. This allows the reproducible realization of nanowires smaller than 20 nm, and with a length of several micrometers, starting from relatively big structures that, even if electron beam lithography has been used in the present work, could be realized also by other (as optical) lithographic techniques. Nanowires are already placed between silicon contacts for electrical transport characterization. The process, compatible with the actual MOS technology, is suitable for a massive, large-scale production of silicon nanowire based devices and it allows a flexible platform for multigate and more complex structures and devices. The nanowire triangular section is a step toward the integration of three-dimensional devices. Electrical characteristics of silicon nanowire FETs, both p- and n-doped, will be reported and discussed.     

Lowering Internal Friction of 0D–1D–2D Ternary Nanocomposite‐Based Strain Sensor by Fullerene to Boost the Sensing Performance

The development of strain sensors with both large strain range (>50%) and high gauge factor (>100) is a grand challenge. High sensitivity requires material to perform considerable structural deformation under tiny strain, whereas high stretchability demands structural connection or morphological integrity for materials upon large deformation, yet both features are hard to be achieved in one thin film. A new 0D–1D–2D ternary nanocomposite–based strain sensor is developed that possesses high sensitivity in broad working strain range (gauge factor 2392.9 at 62%), low hysteresis, good linearity, and long‐term durability. The skin‐mountable strain sensor, fabricated through one‐step screen‐printing process, is made of 1D silver nanowire offering high electrical conductivity, 2D graphene oxide offering brittle layered structure, and 0D fullerene offering lubricity. The fullerene constitutes a critical component that lowers the friction between graphene oxide–based layers and facilitates the sliding between adjacent layers without hurting the brittle nature of the nanocomposite film. When stretching, layer slippage induced by fullerene can accommodate partial applied stress and boost the strain, while cracks originating and propagating in the brittle nanocomposite film ensure large resistance change over the whole working strain range. Such high comprehensive performance renders the strain sensor applicable to full‐spectrum human motion detection.     

硅纳米线纳米电子器件及其制备技术

硅纳米线由于特殊的光学及电学性能如量子限制效应及库仑阻塞效应等,在纳米电子器件的应用方面具有潜在的发展前景。介绍了采用电子束蚀刻技术(EB)、反应性离子蚀刻技术(RIE)、金属有机物化学气相沉积(MOCVD)等制备技术及场效应晶体管、单电子探测器及存储器、双方向电子泵及双重门电路等硅纳米线纳米电子器件的最新进展情况,并对其发展前景作了展望。