电子工业用高纯氮的生产

生产电子工业用高纯氮的制氮装置 ,其要点和难点是一氧化碳和氢的清除。采用一氧化碳转换炉和特殊的冷箱内流程组织 ,可以生产纯度为 99 9999%以上的高纯氮。对制取电子工业用高纯氮制氮装置与常规制氮装置加氮终端净化器两种流程进行了比较。     

锂离子电池正极材料的制备研究现状

叙述了锂离子电池正极材料LiC0O2、LiNiO2：LiMn2O4及锂钒氧化物的合成方法；概述了铝、镍、钛等某些掺杂元素对LiC0O2、LiNiO2、LiMn2O4、锂钒氧化物的容量和循环性能影响。通过对LiC0O2、LiNiO2、LiMn2O4及锂钒氧化物的结构、充放电容量等性能分析和合成原料成本的分析，认为LiMn2O4及锂钒氧化物有望成为新一代优良的锂离子电池正极材料。     

Effect of functionalization and boron and nitrogen substitution on some properties of carbon nanotubes

Molecular orbital calculations of the ionization potential of single wall carbon nanotubes having donor NH₂ and acceptor NO₂ groups bonded to the side walls and ends and boron and nitrogen substituted for carbon show substantial increases in ionization potential compared to carbon nanotubes with no functional groups and no carbon substitutions. The presence of a carbon vacancy on the side wall also causes a substantial increase in the ionization potential. The effect of tube length on the ionization energy is also calculated. The calculations also suggest that at appropriate levels of boron and nitrogen doping the armchair carbon nanotubes could be high temperature organic ferromagnetic materials.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Nitrogen dioxide effect in the reduction of nitric oxide by propane in oxidizing atmosphere

The role of nitrogen dioxide in the selective reduction of NO by propane over a Cu-MFI zeolite is investigated. NO₂ and NO reductions were carried out under similar conditions of reaction. In the presence of oxygen, the reduction of NO by C₃H₈ does not differ significantly from that of NO₂. In the absence of oxygen, the reduction of NO₂ by propane occurs with a partial decomposition of the nitric dioxide molecule. Such a decomposition leads to the formation of oxygen, which is responsible for the increase in catalytic activity by comparison with the same reaction performed with NO. NO₂ formed and released in the gas phase during the reduction of NO by propane in the presence of oxygen does not play a predominant role in the catalytic process.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Equilibrium Studies of the System'(Fe,Co)O'–(Fe,Co)3O4 by Solid-State emf Measurements in the Temperature Range 970 to 1370 K

The equilibrium reaction 3'(Fe, Co)O'( ss ) +1/2O₂ ( g ) ⇄ (Fe, Co)₃O₄( ss ) was studied in the temperature range 970 to 1370 K for seven different total compositions of molar ratios 0.5 < Fe/(Fe + Co) ≤ 1.0. The equilibrium pressures of oxygen were determined by using galvanic cells incorporating calcia stabilized zirconia as solid electrolyte and the Fe/Co ratios in the solid-solution phases by wavelength dispersive spectrometry microprobe analyses. The activities of 'FeO' in the cobaltowüstite phase were then derived from the experimental results obtained.     

Microwave-Assisted Synthesis of Fine Particle Oxides Employing Wet Redox Mixtures

Interaction of electromagnetic radiation with a physical mixture of metal nitrates and amides/hydrazides is observed to initiate high-temperature reactions, useful for realizing several high-temperature ceramic materials. A judicious choice of such redox mixtures undergoes exothermic reactions when they couple with microwave radiation. The coupling of electromagnetic radiation with metal salts and amides/hydrazides depends on the dielectric properties of the individual components in the reaction mixture. The approach has been used to prepare γ-Fe₂O₃, Fe₃O₄, MgCr₂O₄, α-CaCr₂O₄, and La_0.7Ba_0.3MnO₃.     

Electrical and optical properties of MoO3-V2O5 mixed oxide films

Vacuum deposited MoO₃-V₂O₅ films of different molar concentrations have been used for DC electrical conductivity studies at different temperatures. The optical absorption spectra of MoO₃-V₂O₅ films of different molar concentrations have been measured. From these measurements it is found that optical band gap and activation energy vary with molar concentration of MoO₃-V₂O₅ films.