Triphenyl phosphine oxide-bridged bipolar host materials for green and red phosphorescent organic light-emitting diodes

Two wide band gap functional compounds of phenylbis(4-(spiro [fluorene-9,9'-xanthen]-2-yl)phenyl)phosphine oxide (2SFOPO) and (4-(9-ethyl-9H- carbazol-3-yl)phenyl)(phenyl)(4-(spiro[fluorene-9,9′-xanthen]-2-yl)phenyl)phosphine oxide (SFOPO-CZ) were designed, synthesized and characterized. Their thermal, photophysical, electrochemical properties and device applications were further investigated to correlate the chemical structure of bipolar host materials with the electroluminescent performance for phosphorescent organic light-emitting diodes (PhOLEDs). Both of them show high thermal stability with glass transition temperatures in a range of 105–122 °C and thermal decomposition temperatures at 5% weight loss in a range of 406–494 °C. The optical band gaps of compound 2SFOPO and SFOPO-CZ in CH₂Cl₂ solution are 3.46 and 3.35 eV, and their triplet energy levels are 2.51 eV and 2.52 eV, respectively. The high photoluminescent quantum efficiency of emissive layer of doped green device up to 50% is obtained. Employing the developed materials, efficient green and red PhOLED in simple device configurations have been demonstrated. As a result, the green PhOLEDs of compound SFOPO-CZ doped with tris(2-phenylpyridine) iridium shows electroluminescent performance with a maximum current efficiency (CE_max) of 52.83 cd A⁻¹, maximum luminance of 34,604 cd/m², maximum power efficiency (PE_max) of 39.50 lm W⁻¹ and maximum external quantum efficiency (EQE_max) of 14.1%. The red PhOLED hosted by compound 2SFOPO with bis(2-phenylpyridine)(acetylacetonato) iridium(III) as the guest exhibits a CE_max of 20.99 cd A⁻¹, maximum luminance of 33,032 cd/m², PE_max of 20.72 lm W⁻¹ and EQE_max of 14.0%. Compound SFOPO-CZ exhibits better green device performance, while compound 2SFOPO shows better red device performance in PhOLEDs.     

低压宽温高频铝电解电容器工作电解液

在传统的己二酸铵/乙二醇加水体系中,通过增加水的含量实现高电导率,同时在电解液中添加多种有机高分子物质形成复合添加剂,改善工作电解液的高温稳定性,使电容器上限工作温度扩展到105℃,形成高频宽温低阻抗工作电解液。     

Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors

Vertical organic transistors are an attractive alternative to realize short channel transistors, which are required for powerful electronic devices and flexible electronic circuits operating at high frequencies. Unfortunately, the vertical device architecture comes along with an increased device fabrication complexity, limiting the potential of this technology for application. A new design of vertical organic field‐effect transistors (VOFETs) with superior electrical performance and simplified processing is reported. By using electrochemical oxidized aluminum oxide (AlO_x) as a pseudo self‐aligned charge‐blocking structure in vertical organic transistors, direct leakage current between the source and drain can be effectively suppressed, enabling VOFETs with very low off‐current levels despite the short channel length. The anodization technique is easy to apply and can be surprisingly used on both n‐type and p‐type organic semiconductor thin films with significant signs of degradation. Hence, the anodization technique enables a simplified process of high‐performance p‐type and n‐type VOFETs, paving the road toward complementary circuits made of vertical transistors.     

Synergistic Roll‐to‐Roll Transfer and Doping of CVD‐Graphene Using Parylene for Ambient‐Stable and Ultra‐Lightweight Photovoltaics

A roll‐to‐roll (R2R) transfer technique is employed to improve the electrical properties of transferred graphene on flexible substrates using parylene as an interfacial layer. A layer of parylene is deposited on graphene/copper (Cu) foils grown by chemical vapor deposition and are laminated onto ethylene vinyl acetate (EVA)/poly(ethylene terephthalate). Then, the samples are delaminated from the Cu using an electrochemical transfer process, resulting in flexible and conductive substrates with sheet resistances of below 300 Ω sq^?1, which is significantly better (fourfold) than the sample transferred by R2R without parylene (1200 Ω sq^?1). The characterization results indicate that parylene C and D dope graphene due to the presence of chlorine atoms in their structure, resulting in higher carrier density and thus lower sheet resistance. Density functional theory calculations reveal that the binding energy between parylene and graphene is stronger than that of EVA and graphene, which may lead to less tear in graphene during the R2R transfer. Finally, organic solar cells are fabricated on the ultrathin and flexible parylene/graphene substrates and an ultra‐lightweight device is achieved with a power conversion efficiency of 5.86%. Additionally, the device shows a high power per weight of 6.46 W g^?1 with superior air stability.     

Recent Progress in Flexible and Stretchable Organic Solar Cells

Flexible and stretchable organic solar cells (OSCs) have attracted enormous attention due to their potential applications in wearable and portable devices. To achieve flexibility and stretchability, many efforts have been made with regard to mechanically robust electrodes, interface layers, and photoactive semiconductors. This has greatly improved the performance of the devices. State‐of‐the‐art flexible and stretchable OSCs have achieved a power conversion efficiency of 15.21% (16.55% for tandem flexible devices) and 13%, respectively. Here, the recent progress of flexible and stretchable OSCs in terms of their components and processing methods are summarized and discussed. The future challenges and perspectives for flexible and stretchable OSCs are also presented.     

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Controlling the interfacial properties between the electrode and active layer in organic field‐effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top‐contact‐structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top‐contacted source/drain electrode and the polymer active layer to improve the contact resistance (R_C). To achieve this goal, a small amount of interface‐functionalizing species is blended with the p‐type polymer semiconductor and functionalized at the interface region at once through a thermal process. The R_C values dramatically decrease after introduction of the interfacial functionalization to 15.9 kΩ cm, compared to the 113.4 kΩ cm for the pristine case. In addition, the average field‐effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm² V^?1 s^?1 compared to the pristine case (0.041 cm² V^?1 s^?1), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top‐contact OFETs by solving the discomfort of the interface optimization process.     

Hybrid Nanodielectrics for Low‐Voltage Organic Electronics

Nanoscale hybrid dielectrics composed of an ultra‐thin polymeric low‐κ bottom layer and an ultra‐thin high‐κ oxide top layer, with high dielectric strength and capacitances up to 0.25 μFcm^?2, compatible with low‐voltage, low‐power, organic electronic circuits are demonstrated. An efficient and reliable fabrication process, with 100% yield achieved on lab‐scale arrays, is demonstrated by means of pulsed laser deposition (PLD) for the fast growth of the oxide layer. With this strategy, high capacitance top gate (TG), n‐type and p‐type organic field effect transistors (OFETs) with high mobility, low leakage currents, and low subthreshold slopes are realized and employed in complementary‐like inverters, exhibiting ideal switching for supply voltages as low as 2 V. Importantly, the hybrid double‐layer allows for a neat decoupling between the need for a high capacitance, guaranteed by the nanoscale thickness of the double layer, and for an optimized semiconductor–dielectric interface, a crucial point in enabling high mobility OFETs, thanks to the low‐κ polymeric dielectric layer in direct contact with the polymer semiconductor. It is shown that such decoupling can be achieved already with a polymer dielectric as thin as 10 nm when the top oxide is deposited by PLD. This paves the way for a very versatile implementation of the proposed approach for the scaling of the operating voltages of TG OFETs with very low level of dielectric leakage currents to the fabrication of low‐voltage organic electronics with drastically reduced power consumption.     

Flexible top-emitting warm-white organic light-emitting diodes with highly luminous performances and extremely stable chromaticity

The flexible top-emitting white organic light-emitting diode (FTEWOLED) with a very high efficiency but a significant color alteration is achieved with a blue/red/blue sandwiched tri-emission-layer. The voltage-dependent recombination region alternation and the emission mechanism are systematically investigated through a delta-doping method and the time-resolved transient photoluminescence lifetime measurement. By locating the main exciton recombination region at the 4,4′,4″-Tris(carbazol-9-yl)-triphenylamine (TCTA) and 9,9-spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1) interface, replacing the carrier-trapping red dopant guest with an orange guest that utilizes energy transfer mechanism, and using a P–I–N structure together with the FIrpic blue guest dopant to balance the electron and hole carriers, an extremely color stable and a very high efficient FTEWOLED is fabricated, with the resulting high current and power efficiencies of 22.7 cd/A and 14.27 lm/W, and a warm white illumination with a small chromaticity variation of (−0.0087, +0.0015) over a broad luminance range of more than four orders of magnitude. In addition, the performances can be further improved to 23,340 cd/m², 24.49 cd/A and 15.39 lm/W with a slight concentration alteration of the orange emitter.