Effects of Light, Oxygen, and pH on the Absorbance of 2,2-Diphenyl-1-picrylhydrazyl

ABSTRACT: The absorbance of 2,2-diphenyl-1-picrylhydrazyl (DPPH) at 517 nm in methanol and acetone decreased by 20 and 35% for 120 min at 25 °C under light, respectively; in the dark it did not change significantly for 150 min. Decomposition of DPPH under 21% oxygen after 90 min under light was significantly higher than that under 1% oxygen. Absorbance of DPPH in pH 4 buffer solution in methanol, and in pH 10 buffer solution in acetone, decreased by 55 and 80%, respectively, under light for 120 min. The evaluation of antioxidant activity by the changes of DPPH absorbance should be carefully interpreted since the absorbance of DPPH at 517 nm is decreased by light, oxygen, pH, and type of solvent in addition to the antioxidant.     

焚烧炉控制系统

化工废气、废液焚烧炉是一种常用的环保处理装置，就其工艺详细介绍焚烧炉燃烧过程的控制及其安全联锁措施。     

Peanut and Walnut Rancidity: Effects of Oxygen Concentration and Relative Humidity

Accelerated tests for oxidative rancidity of blanched peanuts, blanched dry-roasted peanuts, blanched oil-roasted peanuts and shelled Persian walnuts were performed at high and low oxygen content at controlled intermediate and low relative humidities. The results confirmed and quantified the importance of oxygen content, relative humidity and roasting process in the oxidative rancidity of peanuts and walnuts. There is a potential to extend shelf-life of roasted peanuts and walnuts by edible coatings with low oxygen permeability or nitrogen-flushing with oxygen barrier packaging. Static headspace chromatography was useful to monitor oxidative rancidity in walnuts and roasted peanuts.     

MITOCHONDRIAL RELEVANCE TO YEAST FERMENTATIVE PERFORMANCE: A REVIEW

It is well known that dissolved oxygen fulfils critical roles in brewing yeast physiology and overall fermentative performance. The major and minor roles that have been identified are briefly discussed and another role, that of providing for minimal mitochondrial development and functionality, is suggested. The long accepted theory that mitochondria are irrelevant to fermentative performance is reviewed as to its basis and the evidence in support of it. However, minimal mitochondrial development is required to provide the cell with critical metabolic intermediates and components. These are identified and reviewed and finally, evidence is presented that mitochondria are critical to brewing yeast fermentative performance. The review concludes that when assessing the role of mitochondria, concern should be broader than simply for the energetic function of these organelles.     

CZF90测井中子发生器使用寿命浅谈

Ｃ／Ｏ测井中采用同步测量技术来分析非弹性γ与俘获γ，但在一些ＭＳＩ Ｃ／Ｏ测井中发现非弹性γ的一小部分或一大部分超前于非弹性门而进入俘获门，我们把这一问题叫做“错位”。“错位”使得Ｃ／Ｏ的ＣＩ值不正常，测井曲线不合格。这样的仪器不能用来测井。吉林油田测井公司碳氧比维修班成功地解决了Ｃ／Ｏ仪器“错位”等技术难题，在该油田所使用的ＣＺＦ９０－９４－０９发生器已测井８８口，累计打靶时间２３０ｈ，并且至今     

Fluidization of the active component of catalysts in catalytic formation of carbon assisted by iron and nickel carbides

A series of vanadium-tin mixed oxide catalysts have been prepared by the solid-state reaction of V₂O₅ and SnO₂ at 1250°C. The fresh and the used catalysts have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). High temperature oxygen chemisorption (HTOC) has been employed to titrate the coordinatively unsaturated vanadia sites. Ammoxidation of mesitylene has been carried out on these catalysts and an optimum composition of vanadium is arrived at. Better yields of tricyanobenzene (TCB) compared to literature values are obtained. A good correlation between the oxygen uptake and the TCB yield extends the applicability of HTOC to the fused oxide system.IICT Communication No. 3507.     

Moderate antioxidative efficiencies of flavonoids during peroxidation of methyl linoleate in homogeneous and micellar solutions

The relative reactivities as well as the stoichiometric coefficients for a number of flavonoids, catechols, and—for comparison—standard phenolic antioxidants were determined by analyzing the kinetics of oxygen consumption in organic and micellar systems, with peroxidation initiated by lipid- and water-soluble azo initiators. The results demonstrated that the flavonoids did not behave as classic phenolic antioxidants such as α-tocopherol, but showed only moderate chain-breaking activities. The results were in line with other structure-activity relationship studies on the importance of the B-ring catechol structure, the 2,3-double bond, and the 3,5-hydroxy groups. The data are discussed in view of possible explanations of the deviations flavonoids reveal in their behavior compared with regular phenolic antioxidants.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality

AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence, and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly much greater than those grown with the regular-grade TMA1. The use of AsH₃ purification improves the PL intensity.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.