量子信令分层模型及纠缠分发层功能的实现策略

提出了量子信令的分层模型,分析了各层的功能。针对量子移动通信网与量子固定通信网之间量子信令传递与交换的各种情况,研究了纠缠分发层功能的实现策略。结果表明,所提出的量子信令分层模型,各层功能完善,不仅可以满足未来多用户量子通信的需要,而且分发层功能的实现策略能够适应不同网络之间量子通信的情况,具有很好的通用性。本研究对于未来量子信令标准的制定具有很好的技术支撑作用。     

两个自旋为1/2粒子在纠缠量子系统中的Berry几何相位

研究了两个自旋为1/2的粒子在自旋相互作用情况下的Berry几何相位纠缠依赖,分别计算了两个自旋为1/2的纠缠粒子之间在存在自旋相互作用和无相互作用下的Berry几何相位,并得到在纠缠消失时几何相位的计算表达式.而且我们还讨论了两个粒子中只有一个粒子受到外磁场作用时的几何相位.结果发现其几何相位并不等于单个粒子在受到外磁场作用时的几何相位,而是与影响自旋纠缠强度作用的 有关,同时还得到了几何相位依赖于纠缠的的普遍公式.     

利用转移矩阵和MATLAB求解一维薛定谔方程的一种简捷方法

在用矩阵转移法求解一维定态薛定谔方程时,不用矩阵迭代,而是将矩阵展开为一个线性方程组,利用MATLAB提供的矩阵左除命令,即可获得各区间波函数的近似值.该方法不需要花费较多精力编程,具有概念简单、使用方便、实用性强等特点.     

量子保密与免疫机制在Ad Hoc网络的应用

针对AdHoc网络中存在的安全问题,利用量子通信绝对安全的特性和细胞自我免疫系统的性质,将二者有机地结合在一起,有效地提高了AdHoc的安全性能。分析结果表明,结合量子密钥分发以及细胞自我免疫技术之后,AdHoc网络仍然具有明显而且优越的自组织性和适应性,更重要的是,安全性能可以得到很大改善。对于未来军事通信中网络安全的发展起到关键作用。     

四粒子任意态的概率隐形传态的两种方案

提出利用四个二粒子部分纠缠态作为量子信道,实现四粒子任意纠缠态的概率隐形传输的两种方案.发送者做四次Bell基测量,然后接收者通过引入辅助粒子并做适当的幺正变换,就能以一定的概率完成四粒子纠缠态的隐形传输.由变换算符出发,利用变换算符之间的关系给出两种方案的理论分析.     

Hybrid Perovskite Quantum Dot/Non-Fullerene Molecule Solar Cells with Efficiency Over 15%

Organic-inorganic hybrid film using conjugated materials and quantum dots (QDs) are of great interest for solution-processed optoelectronic devices, including photovoltaics (PVs). However, it is still challenging to fabricate conductive hybrid films to maximize their PV performance. Herein, for the first time, superior PV performance of hybrid solar cells consisting of CsPbI₃ perovskite QDs and Y6 series non-fullerene molecules is demonstrated and further highlights their importance on hybrid device design. In specific, a hybrid active layer is developed using CsPbI₃ QDs and non-fullerene molecules, enabling a type-II energy alignment for efficient charge transfer and extraction. Additionally, the non-fullerene molecules can well passivate the QDs, reducing surface defects and energetic disorder. The champion CsPbI₃ QD/Y6-F hybrid device has a record-high efficiency of 15.05% for QD/organic hybrid PV devices, paving a new way to construct solution-processable hybrid film for efficient optoelectronic devices.     

Compact Quantum-Dot Microbeads with Sub-Nanometer Emission Linewidth

Fluorescent microbeads are widely used for applications in life sciences and medical diagnosis. The spectral contrast and sharpness of photoluminescence are critical in the utilities of microbeads for imaging and multiplexing. Here, microbeads capable of generating single-peak laser emission with a sub-nanometer linewidth are demonstrated. The microbeads are made of quantum dots that are tightly packed and crosslinked via ligand exchange for high optical gain and refractive index as well as material stability. Bright single-mode lasing with no photobleaching is achieved with particle diameters as small as 1.5 µm in the air. Sub-nm lasing emission is maintained even inside high-index surroundings, such as organic solvents and biological tissues. Feasibility of intracellular tagging and multi-color imaging in vivo is demonstrated.     

Improved nanocrystal formation,quantum confinement and carrier transport properties of doped Si quantum dot superlattices for third generation photovoltaics

An all‐Si tandem solar cell has the potential to achieve high conversion efficiency at low cost. However, the selection and synthesis of candidate material remain challenging. In this work, we show that the conventional ‘Si quantum dots (Si QDs) in SiO₂ matrix’ approach can lead to the formation of over‐sized Si nanocrystals especially when doped with phosphorous, making the size‐dependent quantum confinement less effective. Also, our investigation has shown that the high resistivity of this material has become the performance bottleneck of the solar cell. To resolve these matters, we propose a new design based on Si QDs embedded in a SiO₂/Si₃N₄ hybrid matrix. By replacing the SiO₂ tunnel barriers by the Si₃N₄ layers, the new material manages to constrain the growth of doped Si QDs effectively and enhances the apparent band gap, as shown in X‐ray diffraction, Raman, photoluminescence and optical spectroscopic measurements. Besides, electrical characterisation on Si QD/c‐Si heterointerface test structures indicates the new material possesses improved vertical carrier transport properties. Copyright © 2011 John Wiley & Sons, Ltd.     

冷原子束或超冷原子束的产生及其应用

综述了冷原子束或超冷原子束产生的基本原理、方法和实验结果及其最新进展.重点介绍了建立在激光冷却(多普勒、亚多普勒和亚反冲冷却机制)和磁光阱技术基础上的冷原子束或超冷原子束产生方案,并简单介绍了冷原子束或超冷原子束在基础物理问题研究和原子光学等领域中的应用.     

小垂直发散角大光腔980nm单模InGaAs/GaAs/AlGaAs量子阱激光器

通过采用经过优化的新型大光腔结构,脊形波导980nm单模InGaAs/GaAs/AlGaAs多量子阱半导体激光器在保持大功率光输出的同时获得了较小的垂直发散角.结果表明波导中的光功率密度可以降低,获得了大于400mW、斜率效率0.89W/A的输出光功率,垂直方向远场发散角也降低到23°.