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141.
厚膜导体Pd-Ag/Au、Pt-Pd-Au/Au平面复合结构,Pd-Ag/Au立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻,减少线损耗。而且,其超声键合性尤佳 相似文献
142.
By using the technology of the sequential interpenetrating polymer network, a series of novel damping materials based on a polydimethylsiloxane (PDMS)/polyacrylate (PAC) matrix with polymethacrylate (PMAC) were synthesized. They have a controllable broad transition peak spanning the temperature range of 150–220°C and the medial value of loss factor with maximum of 0.35–0.60. Dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC), and atomic force microscopy (AFM) were applied to analyze and characterize the transition behavior and the microphase structure of the materials. It was found that the size and height of a transition peak at both the low‐ and the high‐temperature zones change as a function not only of the concentration of PMAC and PDMS but also of the kind of PMAC; simultaneously, the low‐ temperature behavior was also governed by the crystallization of PDMS. The content of the crosslinking agent exerts a significant influence on the configuration of the curves of the transition peaks. AFM shows a characteristic phase morphology of double‐phase continuity containing a transition layer and domain less than 1 μm, indicating that the interwoven multilayer networks are the key to incorporation of the immiscible components and form a broad damping functional region. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 545–551, 2002 相似文献
143.
Bruce C. Bunker R. James Kirkpatrick Richard K. Brow Gary L. Turner Carolyn Nelson 《Journal of the American Ceramic Society》1991,74(6):1430-1438
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随着计算机技术的发展和水平的提高,图像,声音,图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。 相似文献
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The homopolyester of 4-(4′-hydroxyphenoxy)benzoic acid (poly(4-HPBA)), was prepared under two different reaction conditions and compared with a sample provided by another research group. Depending on the synthetic route, different melting points, d.s.c. traces and crystal lattices were found. However, after repeated heating and cooling, one thermodynamically stable modification with a melting point of 370–375°C can be obtained. Copolyesters of 4-hydroxybenzoic acid and 4-(4′-hydroxyphenoxy)benzoic acid were prepared with various molar ratios either in the melt (condensation in bulk) or in solution. These copolyesters were characterized by elemental analyses, 1H n.m.r. spectroscopy, d.s.c. measurements, wide-angle X-ray scattering measurements at various temperatures, and optical microscopy. Whereas copolyesters prepared in solution do not melt below 500°C, those prepared by polycondensation in bulk show melting points down to approximately 260°C and form a nematic melt. 相似文献
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The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps). 相似文献