Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

微晶合金在电流互感器中的应用

从微晶合金的性能特点出发，分析了其在电流互感器中的应用前景。     

用于机器人轨迹定位纠正系统的回声状态神经网络研究

循环神经网络(RecurrentNeuralNetworks)是人工神经网络(ArtificialNeuralNetworks)中重要的分支,与前馈神经网络(ForwardNeuralNetworks)相比具有更好的时间序列学习能力。但长期以来其学习法一直不能脱离前馈神经网络而自成一体,回声状态神经网络(EchoStateNetworks(ESN))是打破这一局面的全新学习方法。其独特的结构,良好的短期记忆能力,方便的学习方法,不俗的非线性特性是以前循环神经网络所不可比的。本文在介绍了回声状态神经网络之后将其用于四轮机器人的位置测量系统中,有良好的表现。     

采用BP神经网络记忆模糊规则的控制

本文提供了一种比模糊推理更为自然的方式使用人们的经验知识,通过一组神经元不同 程度的兴奋表达一个抽象的概念值,由此将抽象的经验规则转化成多层神经网络的输入一输 出样本.通过Back-Propagation学习算法使得网络记忆这些样本.控制器以"联想记忆"方 式使用这些经验.本文介绍了控制器的构造方法,给出了控制仿真结果,并讨论了这种控制器 的特点和发展前途.     

Colour Centres and Energy Transfer in BaF2-xClx:Eu2+ Phosphors

The optical absorption spectra of BaF2-xClx:Eu2 after ultraviolet (UV) light excitation were investigated.The differences between the absorption spectra after and before excitation (DAS) were observed.The DAS increase at both the high and the low energy side of F band in BaF2-xClx:Eu2 after 245 nm UV light excitation.The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres (association of F(Cl-) centres), whose absorption band matches the HeNe laser better, may explain the latter.In the write-in process, the transfer of electrons is via tunneling.In the readout process, the transfer of electrons captured in F(F-) and Fa centres is more likely via tunneling, and that of F(Cl-) centres is more likely via conduction band.     

Optimal ensemble construction via meta-evolutionary ensembles

In this paper, we propose a meta-evolutionary approach to improve on the performance of individual classifiers. In the proposed system, individual classifiers evolve, competing to correctly classify test points, and are given extra rewards for getting difficult points right. Ensembles consisting of multiple classifiers also compete for member classifiers, and are rewarded based on their predictive performance. In this way we aim to build small-sized optimal ensembles rather than form large-sized ensembles of individually-optimized classifiers. Experimental results on 15 data sets suggest that our algorithms can generate ensembles that are more effective than single classifiers and traditional ensemble methods.     

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

Feasibility study of absolute activity measurement with metallic magnetic microcalorimeters

We report on a feasibility study on precise determination of mass-specific activity of low-energy emitting radioisotopes. Conventional methods of activity measurement suffer from source self-absorption and a strong decrease in detection efficiency for low-energy electrons and photons. We propose a new method based on metallic magnetic microcalorimeters with the source embedded in the detector target in a 4π geometry. First results with a ⁵⁵Fe source show that electrons and photons are detected with a detection efficiency close to unity and with little loss of energy for electrons. The aim of this study is to provide standards of activity with very low uncertainties in the framework of radiation metrology.     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.