低温电沉积硅工艺研究进展

半导体硅的传统制备工艺主要有直拉法、区熔法及气相沉积法等,这些制备工艺都需要在高温下进行,且涉及到大型设备,制备成本较高,操作较为复杂。采用低温电沉积法制备硅具有简单可控、低成本的特点,因而受到了研究者青睐。主要从电极、溶剂的选取及电沉积方法等方面阐述了低温电沉积硅工艺研究现状,同时对低温电沉积硅存在的问题和发展趋势进行了讨论。     

Study on Microstructure and Mechanical Properties of Hot Rolled Low Silicon Containing Phosphorus TRIP Steel

The effects of final air cooling temperature on the microstructure and mechanical properties of hot rolled 0.2C-1.9Mn-0.5Si-0.08P TRIP steel were studied by utilizing OM, SEM, TEM and tensile tests. Experimental results showed that in the multiphase microstructure of the investigated steel when the finish rolling temperature was about 820 ℃ and the final air cooling temperature was in the range of 630-700 ℃, the grain size of most of ferrite was finer (about 4 μm) and which had higher dislocation density, t...     

Internal surface protection of gas turbine blade by Si‐aluminide coating

A laboratory‐scale slurry silicoaluminizing process has been developed to apply coating into cooling passageways of a first‐stage gas turbine blade. Analytical techniques for characterizing the coatings comprised optical microscopy, SEM, EDS, and XRD. The results of metallographic examinations demonstrated that acceptable coatings had been formed in almost all of the passageways. The amounts of Al and Si in the topcoat were found to be in the ranges of 24–26 wt% and 4.5–6 wt%, respectively. The heat treated coating consisted largely of β‐NiAl phase as the coating matrix with uniform distribution of <2 µm‐size precipitates. In addition, oxidation and hot corrosion performance of the coatings were investigated by cyclic exposure to 1100 °C and the furnace method using a mixture of sodium sulfate‐40 wt% sodium vanadate‐10 wt% sodium chloride at 780 °C, respectively. It was found that the presence of Si in the coating improves both oxidation and hot corrosion Type II properties.     

Evaluation of free carrier losses to 1.54 μm emission in Si/Si:Er nanolayers on SOI substrate for optical gain observation

In this study we use a combination of variable stripe and shifting excitation spot methods to evaluate linear low temperature (4.2 K) optical properties of Si/Si:Er multinanolayer grown on SOI substrate. In particular, Er-1 luminescence at 1.54 μm under continuous wave excitation was examined. Absorption coefficients of 22.4 ± 4.2 and 45.1 ± 4.2 cm⁻¹ at photon fluxes of 2.4 × 10¹⁹ and 2.4 × 10²⁰ cm² s⁻¹, respectively, have been established. These are approximately three times higher than those found earlier for a similar structure grown on Si substrate.     

电感耦合等离子体原子发射光谱法测定硅锰合金中的铝

提出了电感耦合等离子体原子发射光谱法测定硅锰合金中铝的测定方法。试样于铂皿中,加入硝酸氢氟酸溶解试样,高氯酸驱赶氟离子,用盐酸溶解盐类,选择波长309．3nm为主分析线,方法的检出限为0．02mg／L,分析了几批试样,测定值与国家标准方法测定值相对误差〈0．22％,回收率在98．67％-100．14％。     

硅橡胶冷缩式电力电缆附件的应用

由于硅橡胶具有良好的电气和物理性能,硅橡胶冷缩式电缆附件的应用前景广阔.介绍硅橡胶和冷缩式电缆附件的性能特点以及应用中应注意的问题.     

电厂空冷机组化学洗硅新工艺概述与应用

高效洗硅成膜剂是一种环保的专利药剂,经过数次小型试验,证明其在特定条件下,具有快速溶硅,并且可在金属表面形成一种致密长效的亮蓝色保护膜。根据某空冷机组电厂吹管及整套启动期间采用此产品进行洗硅运行中取得的数据,进行一些相应的讨论和比对。     

不同硅源制备二氧化硅气凝胶研究进展

近年来,二氧化硅气凝胶凭借其优异性能在诸多领域被广泛应用。硅源作为制备SiO₂气凝胶最重要的组成部分,对获得结构完整、性能优良的SiO₂气凝胶至关重要。本文综述了多种硅源为前驱体的SiO₂气凝胶发展历程及制备。硅源种类划分为单一硅源和复合硅源。单一硅源主要有水玻璃、硅溶胶、工农业含硅废料及常见硅醇盐;复合硅源通过引入疏水性和功能性基团来改善结构性能,从而实现其在不同领域的应用。最后对SiO₂气凝胶硅源的选择、研究现状及前景进行探讨。