水轮机调速器现代调节技术及选型

对目前比较先进的微机调速器的两种系统结构进行了分析，并对微机调节的控制策略和调节参数的设置及系统配置等作了介绍，并提出了对凋速器技术性能的评价标准和调速器选型时的突出问题，可为实际应用提供参考。     

Putting it all together – Formal verification of the VAMP

In the verified architecture microprocessor (VAMP) project we have designed, functionally verified, and synthesized a processor with full DLX instruction set, delayed branch, Tomasulo scheduler, maskable nested precise interrupts, pipelined fully IEEE compatible dual precision floating point unit with variable latency, and separate instruction and data caches. The verification has been carried out in the theorem proving system PVS. The processor has been implemented on a Xilinx FPGA. A shorter version of this article with the title “Instantiating uninterpreted functional units and memory system: functional verification of the VAMP” appeared in [8]. The work reported here was done while all the authors were with Saarland University.     

A hybrid extended finite element/level set method for modeling phase transformations

A hybrid numerical method for modelling the evolution of sharp phase interfaces on fixed grids is presented. We focus attention on two‐dimensional solidification problems, where the temperature field evolves according to classical heat conduction in two subdomains separated by a moving freezing front. The enrichment strategies of the eXtended Finite Element Method (X‐FEM) are employed to represent the jump in the temperature gradient that governs the velocity of the phase boundary. A new approach with the X‐FEM is suggested for this class of problems whereby the partition of unity is constructed with C¹(Ω) polynomials and enriched with a C⁰(Ω) function. This approach leads to jumps in temperature gradient occurring only at the phase boundary, and is shown to significantly improve estimates for the front velocity. Temporal derivatives of the temperature field in the vicinity of the phase front are obtained with a projection that employs discontinuous enrichment. In conjunction with a finer finite difference grid, the Level Set method is used to represent the evolution of the phase interface. An iterative procedure is adopted to satisfy the constraints on the temperature field on the phase boundary. The robustness and utility of the method is demonstrated with several benchmark problems of phase transformation. Copyright © 2002 John Wiley & Sons, Ltd.     

Hybrid LES — Review and assessment

In the late eighties and up to the beginning of nineties computation of turbulent flows is mostly dominated by RANS (Reynolds Averaged Navier-Stokes Simulation) type modelling. During the last few years URANS (Unsteady RANS) and LES (Large Eddy Simulation) type of approaches have been attempted with some success. Yet, there have been many difficulties when LES is applied to practical engineering problems and to high Reynolds number flows as energy dissipating eddies become really small and mesh resolution required for a reasonably resolved LES approaches that of DNS (Direct Numerical Simulation). An alternative solution suggested was to combine RANS and LES, which in general referred to as Hybrid LES. There have been many proposals for combining RANS and LES in different ways. In this article, some of the issues involved in performing hybrid LES reported in the recent literature is briefly reviewed.     

Influence of Ni Interlayers on the Mechanical Properties of Ti6Al4V/(WC-Co) Friction Welds

Ni interlayers were introduced prior to dissimilar friction welding of Ti6Al4V base material to three cemented carbide substrates. The fracture strength of Ti6Al4V/(WC-6 wt% Co) welds were poor and were markedly improved when 20-µm thick Ni interlayers were introduced prior to dissimilar friction welding. These results were only produced when the (WC-6 wt% Co) cermet was electroplated prior to friction welding. When the Ti6Al4V alloy was electroplated prior to friction welding, fractured WC particles and cracking were observed in the (WC-Co) carbide substrate. The fracture strengths of Ti6Al4V/(WC-11 wt% Co) and Ti6Al4V/(WC-24 wt% Co) welds were not improved when 20-µm thick Ni interlayers were introduced prior to friction welding. During mechanical testing, the Ni layer retained at the dissimilar joint interface created a region of weakness.     

单片机软件模拟SPI接口的解决方案

SPI接口是一种同步串行通讯接口，具备SPI接口的外围芯片十分丰富，应用非常广泛。但是，具备SPI接口的单片机种类较少。介绍了一种基于单片机的模拟SPI接口的方法，使没有SPI接口的单片机扩展带有SPI接口的外围芯片成为现实。     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

TPS/TDC3000系统串口通讯的规划与应用

针对TPS/TDC30 0 0系统串口通讯方式、机理进行了一般性的介绍 ,对规划与应用中常见的的问题 ,根据实际工程应用经验提出了解决方案。     

苏北及邻区前志留基础层的综合地球物理研究

在前新生代油气资源选区评价中，前志留面之下未变质沉积地层（简称前志留基础层）的分布具有重要的参考价值。从提高纵向分辨率的处理和反演技术的应用入手，结合约束条件,利用大地电磁测深数据反演,揭示前志留面等界面的埋深和分布；同时应用小波分析技术，从磁场中分解出区域磁异常，反演结晶基底的埋深。通过这2个界面埋深的差异来分析前志留基础层的分布     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.