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991.
We have investigated the relation between the crystal structure and superconductivity in La1.9Bi0.1CuO4+ , in which the phase separation observed in La2CuO4+ is suppressed. A phase diagram in theT– plane is given for La1.9Bi0.1CuO4+ with excess oxygen. For very small values, the crystal structure is orthorhombic, and an orthorhombic-tetragonal phase transition occurs markedly at 0.03 in the measured temperature range between 13 and 293 K. Superconductivity is observed in the range of 0.04<<0.11. This is clear evidence thathigh-T c superconductivity also appears in the tetragonal phase.  相似文献   
992.
Abstact The subject of this paper is the investigation of finite-size effects and the determination of critical parameters for a class of truncated Lennard-Jones potentials. Despite significant recent progress in our ability to model phase equilibria in multicomponent mixtures from direct molecular simulations, the accurate determination of critical parameters remains a difficult problem. Gibbs ensemble Monte Carlo simulations with systems of controlled linear system size are used to obtain the phase behavior in the near-critical region for two- and three dimensional Lennard-Jones fluids with reduced cutoff radii of 3, 3.5, and 5. For the two-dimensional systems, crossover of the effective exponent for the width of the coexistence curve from mean field ( = 1/2 in the immediate vicinity of the critical point to Ising-like (= 1/8) farther away is observed. Critical parameters determined by fitting the data that follow Ising-like behavior are in good agreement with literature values obtained with finite-size scaling methods. For the three-dimensional systems, no crossover to mean field-type behavior was apparent. Extrapolated results for the critical parameters are consistent with literature estimates for similar fluids. For both two- and three-dimensional fluids, system size effects on the coexistence curves away from the critical point are small, normally within simulation statistical uncertainties.Invited paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994, Boulder. Colorado, U.S.A.  相似文献   
993.
The influence onT c of dilatation centers (DC) as elastic defects near the surface or in thin films of oxide high-Tc superconductors is considered. The distribution function ofT c in this case was obtained. This is the Lorentzian with center shifted to largerT c values. The half width of theT c distribution n (n is the concentration of DC) is larger than its center shift and corresponds to the increase ofT c fluctuations near the surface. As a result, a continuum percolation behavior with increasing critical temperature percolation levelT (c) near the surface appears. The inequalityn>T (c)>T c initial is fulfilled. ForT>T (c) the quasi-2D Josephson media takes place where a finite superconductive domain withT c local >T (c) exists. The influence of DC considerably increases for strong DC such as off-center impurity ions.  相似文献   
994.
We propose a theory of superconductivity for a crystal having multiple band structure. The theory is valid for the parameter(k F)/1 when the splitting between bands(k F ) is small in comparison with the phonon frequency. The theory may be applicable to the doped fullerenes where it is widely supposed that pairing occurs through high-energy intramolecular phonons. As in semiconductors, the bunch of bands is treated by ascribing the highest spin to electrons. We derive the analytic expression for the critical temperature, which strongly depends on the value of the total spin of the Cooper pair, which may be equal toY=0,1,.... In all cases the order parameter is a vector with components proportional to spherical harmonics and at the same time the superconducting gap has no zeros. The data may be fitted to doped fullerenes, if the superconductivity arises fromd-pairing.  相似文献   
995.
For a non-idealized machine tool, each point in the workspace is associated with a tool point positioning error vector. If this error map can be determined, then it is possible to substantially improve the positioning performance of the machine by introducing suitable compensation into the control loop. This paper explores the possibility of using an artifical neural network (ANN) to compute this mapping. The training set for the ANN is obtained by mounting a physical artifact whose dimensions are precisely known in the machine's workspace. The machine, equipped with a touch trigger probe, measures the positions of features on the artifact. The difference between the machine reading and the known dimension is the machine error at that point in the workspace. Using standard modeling techniques, the kinematic error model for a CNC turning center was developed. This model was parameterized by measurement of the parametric error functions using a laser interferometer, electronic levels and a precision square. The kinematic model was then used to simulate the artifact-measuring process and develop the ANN training set. The effect of changing artifact geometry was explored and a machining operation was simulated using the ANN output to provide compensation. The results show that the ANN is capable of learning the error map of a real machine, and that ANN-based compensation can significantly reduce part-dimensional errors.  相似文献   
996.
Fluorescence yield near-edge spectroscopy (FYNES) above the carbon K edge and temperature programmed reaction spectroscopy (TPRS) have been used as the methods for characterizing the reactivity and structure of adsorbed aniline and aniline derived species on the Ni(100) and Ni(111) surfaces over an extended range of temperatures and hydrogen pressures. The Ni(100) surface shows appreciably higher hydrogenolysis activity towards adsorbed aniline than the Ni(111) surface. Hydrogenolysis of aniline on the Ni(100) surface results in benzene formation at 470 K, both in reactive hydrogen atmospheres and in vacuum. External hydrogen significantly enhances the hydrogenolysis activity for aniline on the Ni(100) surface. Based on spectroscopic evidence, we believe that the dominant aniline hydrogenolysis reaction is preceded by partial hydrogenation of the aromatic ring of aniline in the presence of 0.001 Torr of external hydrogen on the (100) surface. In contrast, very little adsorbed aniline undergoes hydrogen induced C-N bond activation on the Ni(111) surface for hydrogen pressures as high as 10–7 Torr below 500 K. Thermal dehydrogenation of aniline dominates with increasing temperature on the Ni(111) surface, resulting in the formation of a previously observed polymeric layer which is stable up to 820 K. Aniline is adsorbed at a smaller angle relative to the Ni(111) surface than the Ni(100) surface at temperatures below the hydrogenolysis temperature. We believe that the proximity and strong -interaction between the aromatic ring of the aniline and the surface is one major factor which controls the competition between dehydrogenation and hydrogen addition. In this case the result is a substantial enhancement of aniline dehydrogenation relative to hydrogenation on the Ni(111) surface.  相似文献   
997.
随着电动汽车的普及度越来越高,工业园区的电动汽车用户日益增多,其充放电行为对园区综合能源系统规划和运行带来极大挑战。本文提出了考虑电动汽车充放电意愿的园区综合能源系统双层优化调度。首先基于动态实时电价、电池荷电量、电池损耗补偿、额外参与激励等因素建立充放电意愿模型,在此基础上得到改进的电动汽车充放电模型;然后,以园区综合能源系统总成本最小和电动汽车充电费用最小为目标建立双层优化调度模型,通过KKT条件将内层模型转化为外层模型的约束条件,从而快速稳定的实现单层模型的求解;最后,进行仿真求解,设置3种不同场景,对比了所提模型与一般充放电意愿模型,验证了文中所提引入EV充放电意愿模型的园区综合能源系统双层优化调度的有效性和可行性,具有一定的经济效益。  相似文献   
998.
随着世界各地夏季环境温度不断升高,电缆中间接头的工作环境正在恶化。为此,文中基于有限元法建立10 kV三芯电缆及其中间接头仿真模型,分析不同环境温度和不同电流下中间接头的温度分布。首先,开展温升试验,得到电缆中间接头表面的稳态温度,验证仿真模型的准确性;然后,拟合不同环境温度下中间接头高压载流导体表面温度与电流的函数关系,以此可以计算不同极端环境温度下中间接头的极限安全载流量。结果表明,环境温度升高对中间接头高压载流导体表面的温度分布趋势几乎没有影响,在外护套外表面处也满足此规律。中间接头高压载流导体表面温度与电流近似成二次函数关系。当电流幅值为480 A、环境温度为75 ℃时,高压载流导体表面与外护套外表面最高温度分别是环境温度为30 ℃时的1.57倍与1.69倍。当环境温度超过55 ℃时,按照国标规定的持续允许载流量会使中间接头高压铜导体表面温度超过最高允许运行温度90 ℃。考虑到自2020年起夏季环境温度持续增加,现行国标中10 kV铜导体三芯交联聚乙烯绝缘电缆中间接头的持续允许载流量须被修正。  相似文献   
999.
针对室温工作的光伏型碲镉汞中波红外探测器激光辐照饱和特性进行了仿真,结果表明,中红外激光对碲镉汞材料的加热效应以及光照导致零偏压阻抗降低,是影响探测器输出量子效率的重要因素。利用一维数值仿真方法,建立了室温碲镉汞pn结的模型,计算了稳态激光辐照下器件量子效率以及零偏压阻抗。理论计算了激光辐照下的稳态温度分布近似模型,并将温度场分布耦合到仿真计算中,发现衬底厚度会影响芯片的温升,从而显著影响器件饱和阈值的大小。另外,计算表明,随着光照强度的增加,器件的零偏压阻抗降低,并将仿真结果与实测芯片参数进行了比较。计算分析为设计高饱和辐照度阈值的中波红外碲镉汞探测器提供了参考。  相似文献   
1000.
基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250~320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50~140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。  相似文献   
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