Adaptation of Oxidative Phosphorylation Machinery Compensates for Hepatic Lipotoxicity in Early Stages of MAFLD

Alterations in mitochondrial function are an important control variable in the progression of metabolic dysfunction-associated fatty liver disease (MAFLD), while also noted by increased de novo lipogenesis (DNL) and hepatic insulin resistance. We hypothesized that the organization and function of a mitochondrial electron transport chain (ETC) in this pathologic condition is a consequence of shifted substrate availability. We addressed this question using a transgenic mouse model with increased hepatic insulin resistance and DNL due to constitutively active human SREBP-1c. The abundance of ETC complex subunits and components of key metabolic pathways are regulated in the liver of these animals. Further omics approaches combined with functional assays in isolated liver mitochondria and primary hepatocytes revealed that the SREBP-1c-forced fatty liver induced a substrate limitation for oxidative phosphorylation, inducing enhanced complex II activity. The observed increased expression of mitochondrial genes may have indicated a counteraction. In conclusion, a shift of available substrates directed toward activated DNL results in increased electron flows, mainly through complex II, to compensate for the increased energy demand of the cell. The reorganization of key compounds in energy metabolism observed in the SREBP-1c animal model might explain the initial increase in mitochondrial function observed in the early stages of human MAFLD.     

Flexible electronics: Prediction of substrate deformation during different steps of the lithography process

A numerical model was developed to simulate the micro-deformations of a polymeric substrate due to lithographic processing of different layers of a transistor-like structure. The results of the model were validated with the results from experiments. The model, a mechanical-thermal-hygroscopic model, takes into account the dimensional effects of temperature, moisture and stresses. It also includes the temperature dependent visco-elastic behaviour of the polymer substrate. The model can be used to predict overlay accuracies between different functional layers introduced by the lithographic process. It can also be used to understand the underlying processes such that it provides a tool to improve the overlay accuracy during actual processing.     

Coating of TiB2 dispersed Ti50Ni50 superelastic alloy layer onto Ti-6Al-4V alloy by spark and resistance sintering

The spark and resistance sintering (SRS) of a mixture of Ti, Ni, and TiB₂ powders was carried out to form a TiB₂ dispersed TiNi alloy layer onto a Ti-6Al-4V alloy substrate. The strength and delamination resistance of the surface layer were evaluated by three-point bending tests. The results showed that the bending strength of the specimen with the TiNi alloy surface layer without TiB₂ particles sintered at 1273 K was low because the crack initiation occurred at an early stage of loading in a thick interface layer containing brittle Ti-Ti₂Ni eutectic. By decreasing the sintering temperature to 1200 K, the bending strength increased and the crack initiation occurred from the surface because the interface layer was thin and did not contain the brittle Ti-Ti₂Ni eutectic. For the specimens with TiB₂ dispersed TiNi surface layer that was sintered at 1273 K, the bending strength was larger than that of the specimens with TiNi surface layer because the interface layer does not contain the Ti-Ti₂Ni eutectic and compressive residual stress generated in the surface layer during cooling process after SRS suppresses the crack initiation on the surface. The coating of TiB₂ dispersed TiNi alloy onto titanium alloys by SRS provides strong interface to prevent delamination of the surface layer, strong surface due to residual compressive stress, and wear-resistant surface due to the existence of hard TiB₂ particles and superelastic deformation of TiNi matrix.     

多芯片组件基板的热效应分析

针对大功率多芯片模块,建立了简化传热模型,利用有限元数值方法,对其热阻和温度场进行了稳态和瞬态分析.模拟结果表明:模块的散热方式以热传导为主.由芯片到外壳底面的热通路为主要散热途径,采用导热性能好的基板是非常有效的散热方案:绝缘层热阻占整个基板热阻的65%;模块设计时要尽量减小功率互连引线的寄生电感和电阻.合理安排功率管芯位置,要求布线尽量短而宽.多个功率芯片要尽量均匀分布于基板上,以此降低结温,避免热集中现象.     

有色棉底布电脑测配色套色

对电脑测配色公式进行推导,建立适合有色棉底布套色的基础数据库。染料总用量相同,采用单一染料分别对空白棉织物单次和两次进行染色,结果显示分次染色后棉织物的K/S值低于单次染色。根据该现象,对现有的套色功能提出质疑。分别建立以空白棉织物和有色棉织物为底布的基础数据库并对数据库的套色准确性进行测试,结果显示直接采用有色棉织物为底布建立基础数据库获得的各染料单位浓度的K/S值应用于有色棉织物套色更符合套色的染色过程,降低了套色次数,减少了套色时间。本文根据实际情况对电脑测配色理论进行了一定程度的拓展,并为采用电脑测配色对有色棉织物修色提供了一条新的途径。     

光盘光固化复制工艺中玻璃基片表面改性

测定了光固化膜分别与玻璃基片、金属Ni-模的结合力.采用预涂PMMA底化层、使用α-型硅烷偶联剂和SOL-GEL法制备衬底三种方法对玻璃基片表面进行改性并作比较,来选择合理的、经济的工艺路线.运用此工艺复制了CD唱片,并用SEM观察复制信息的微观形貌.     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

基于BCB的薄膜多层基板在毫米波T/R组件中的应用

基于BCB的薄膜多层基板具有优异的高频特性,是毫米波频段多芯片组件集成封装的重要途径。研究了BCB薄膜多层基板在Ka波段相控阵雷达T/R组件中应用的可行性,首先与LTCC基板对比验证了BCB微带线的传输特性,然后研制了功率分配/合成器、穿墙过渡等关键微波无源电路,最后设计了八通道的无源组件进行微波性能测试评估,结果表明基于BCB的薄膜多层基板能够满足应用需要。     

替代衬底上的碲镉汞长波器件暗电流机理

基于暗电流模型,通过变温I-V分析长波器件(截止波长为9~10μm)的暗电流机理和主导机制.实验对比了不同衬底、不同成结方式、不同掺杂异质结构与暗电流成分的相关性.结果表明,对于B+离子注入的平面结汞空位n~+-on-p结构,替代衬底上的碲镉汞(HgCdTe)器件零偏阻抗(R0)在80 K以上与碲锌镉(CdZnTe)基碲镉汞器件结阻抗性能相当.但替代衬底上的HgCdTe因结区内较高的位错,使得从80 K开始缺陷辅助隧穿电流(I_(tat))超过产生复合电流(I_(g-r)),成为暗电流的主要成分.与平面n~+-on-p器件相比,采用原位掺杂组分异质结结构(DLHJ)的p~+-on-n台面器件,因吸收层为n型,少子迁移率较低,能够有效抑制器件的扩散电流.80 K下截止波长9.6μm,中心距30μm,替代衬底上的p~+-on-n台面器件品质参数(R0A)为38Ω·cm2,零偏阻抗较n-on-p结构的CdZnTe基碲镉汞器件高约15倍.但替代衬底上的p+-on-n台面器件仍受体内缺陷影响,在60 K以下较高的Itat成为暗电流主导成分,其R0A相比CdZnTe基n~+-on-p的HgCdTe差了一个数量级.