碳化硅器件挑战现有封装技术

碳化硅(SiC)器件的新特性和移动应用的功率密度要求给功率器件的封装技术提出了新的挑战。现有功率器件的封装技术主要是在硅基的绝缘栅双极晶体管(Insulated Gate Bipolar Transistor,IGBT)和金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)等基础上发展起来的,并一直都在演进,但这些渐进改良尚不足以充分发挥SiC器件的性能,因而封装技术需要革命性的进步。在简述现有封装技术及其演进的基础上,主要从功率模块的角度讨论了封装技术的发展方向。同时讨论了功率模块的新型叠层结构以及封装技术的离散化、高温化趋势,并对SiC器件封装技术的发展方向做出了综合评估。     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

一种Ku波段综合馈电多功能板的研制

基于多层微波数字复合基板层叠互联技术,研制的Ku波段综合馈电多功能板集成了射频收发网络、电源分配网络、阵面波控及波控分配网络,主要负责16个片式T/R组件的功率分配与合成,同时为各T/R组件提供电源及控制信号。文中对多功能板的架构设计、工作原理进行了说明,重点介绍了各微波垂直互联电路和射频收发网络的设计,最后加工并测试了验证样件,测试结果良好。收发网络总口驻波＜1.9,分口驻波＜1.3,插损＜16 dB,相邻端口的隔离度＞20 dB,且幅度一致性≤0.602 dB,相位一致性≤6.429°。工程应用可行性和实用性得到了验证。     

化学气相沉积制备大面积高质量石墨烯的研究进展

石墨烯是由单层碳原子紧密堆积形成的一种碳质新材料,具有优良的电学、光学、热学及力学等性质。在众多的石墨烯制备方法中,化学气相沉积(Chemical vapor deposition,CVD)最有可能实现大面积、高质量石墨烯的可控制备。综述了CVD方法制备大面积、高质量石墨烯的影响因素,包括衬底、碳源及生长条件(气体流量、生长温度、等离子体功率、生长压强、沉积时间、冷却速率等)。最后展望了CVD方法制备石墨烯的发展方向。     

衬底偏压对反应磁控共溅射 Y∶HfO2薄膜电学性能的影响

作为微电子器件中最具发展前景的高介电薄膜材料,HfO₂薄膜得到了学者们的广泛研究。低漏电流是HfO₂薄膜使器件获得优良性能的前提,但易受晶粒尺寸、氧空位和粗糙度等因素影响。针对反应磁控溅射所得薄膜表面粗糙度高及漏电流密度大等缺点,本文在溅射过程中通过在衬底施加偏压的方法降低了HfO₂薄膜的漏电流密度。结果表明：通过在衬底施加适当的偏压使得Y掺杂HfO₂(Y∶HfO₂)薄膜的漏电流密度降低到8×10^-8 A/cm²。漏电流密度的变化与薄膜粗糙度和晶粒尺寸有关,而薄膜粗糙度和晶粒尺寸主要受衬底偏压的影响,但衬底偏压对薄膜物相的影响可以忽略。通过施加衬底偏压,利用反应磁控溅射方法制备了低漏电流和高k值Y∶HfO₂薄膜,可为高性能器件的制备提供基础。     

Maskless writing of microfluidics: Rapid prototyping of 3D microfluidics using scratch on a polymer substrate

We present a new rapid prototyping method designed for simple fabrication of 3D microfluidics using a maskless direct writing technique on polymer substrates. The entire process is enabled by a commercial cutter plotter with 10 μm resolution precision and high speed. A CAD design of top and bottom microstructures is directly written on a polymer substrate using a cutter plotter after setting up the suitable force. The smallest channel width of 20 μm was obtained with the minimum force and 100 μm from the maximum. Also the written depth increased linearly with force from 30 to 130 μm. Several 3D microfluidic devices are demonstrated using a maskless writing technique. The entire fabrication process from CAD layout to a final 3D device can be completed in 30 min outside the clean room facilities.     

Preliminary evaluation of electroencephalographic entrainment using thalamocortical modelling

Abstract: The concept of linked oscillators in biological control systems has long been established. Frequency entrainment is a predominant explanation behind many biological rhythms. In this paper a preliminary examination of electroencephalographic entrainment is made to survey the possibility and methods of achieving signal entrainment at the highest level of neurological organization and function. A model of the thalamocortical system is employed to generate simulated electroencephalographic signals and is tested in various configurations in the search for entrainment under very simple conditions. Additionally, an analysis of the coupled Van der Pol model of the circadian rhythm controller is performed to identify the possibility of affecting that system with a drastically different coupling input signal. We were able to conclude that overall signal shape can have a significant impact on the entrainment characteristics of the system. Due to the nature of the underlying mathematical structure of the model, by examining the circadian rhythm controller, we found that it is unsuitable for entrainment to an incident entraining signal of much higher frequency.     

Investigation of Raman enhancement in hydrothermally roughened SERS-active substrates

In this work, we study surface enhanced Raman spectroscopy (SERS) active substrates for the detection of Rhodamine 6G. To examine the electromagnetic enhancement, we apply the finite-difference time-domain (FDTD) algorithm to analyze the structures by solving a set of coupled Maxwell's equations (Ampere's Law and Faraday's Law) in differential form. The field enhancements are thus investigated in the visible regime with the wavelength of 633 nm. In our experimental measurement, the surface enhanced Raman scattering signals from the surface of substrates with 12-hour treatment and without treatment are performed and compared. Through the three-dimensional (3D) FDTD calculation, we find that the hydrothermally 12-hour treated samples possess significantly vertical variations of surface and thus have relatively larger field enhancement than those without treated. Consequently, it implies a strong positive effect on the surface enhancement which is consistent with the measured intensity.     

基于改进的Voronoi图划分的边界元衬底耦合参数提取技术

提出了一种快速而准确的数模混合集成电路衬底耦合参数提取方法。采用边界元法求解衬底耦合电阻,与有限差分法相比,计算速度提高了一个数量级以上,且可以保持精度,结合改进的Ｖｏｒｏｎｏｉ图来划分版图,生成的衬底ＲＣ网络数目远小于同样采用Ｖｏｒｏｎｏｉ图的文献「４」,而且解决了文献「４」中由于解析公式计算衬底电阻导致精度不高的问题。