电力设备全寿命周期成本中故障成本的估算

针对全寿命周期成本中故障成本难预测的问题,根据电力设备累积失效概率符合威布尔(Weibull)模型的特点,运用最小二乘法对Weibull模型参数进行估计,计算出设备的期望寿命,从而建立故障成本估算模型。通过比较分析不可修复设备和可修复设备故障成本的计算方式,针对可修复设备平均寿命的特殊性,引进等劣化理论来揭示可修复设备平均寿命之间的关系,并计算出可修复设备的故障成本。算例验证了该方法的有效性。     

From defects creation to circuit reliability - A bottom-up approach (invited)

This paper presents a theoretical framework about interface states creation rate from Si-H bonds at the Si/SiO₂ interface. It includes three mains ways of bond breaking. In the first case, the bond can be broken thanks to the bond ground state rising with an electrical field. In the two others cases, incident carriers will play the main role either if there are very energetic or very numerous but less energetic. This concept allows us physically modeling the reliability of MOSFET transistors, and particularly NBTI permanent part, and Channel Hot Carrier (CHC) to Cold Carrier (CCC) damage. Finally, the translation of these physical models into reliability spice models is discussed. These models pave the way to Design-in Reliability (DiR) approach which seeks to provide a quantitative assessment of reliability - CMOS device reliability in this case - at design stage thereby enabling judicious margins to be taken beforehand.     

低压组合床重整装置腐蚀调查

重整装置腐蚀类型有高温H2腐蚀、高温H2-H2S腐蚀、有机酸腐蚀、H2S-HCl-H2O腐蚀,针对不同类型的腐蚀,应采取相应的防腐蚀措施。     

以蔗糖为模板剂合成介孔氧化铝

以蔗糖为模板剂,异丙醇铝为铝源,水相体系下,考察了体系pH和模板剂用量对介孔氧化铝合成的影响。并采用X射线衍射、透射电镜(TEM)、氮吸脱附以及固体核磁等手段对合成样品进行表征。结果表明,合成的介孔氧化铝为γ-Al2O3,具有较高的比表面积以及较集中的孔径分布。体系的pH和模板剂用量对介孔氧化铝产物的性能有一定影响,并对蔗糖的模板作用机理进行了讨论。     

Graceful Degradation FEC Layer for Multimedia Broadcast/Multicast Service in LTE Mobile Systems

This paper proposes an additional forward error correction (FEC) layer to compensate for the defectiveness inherent in the conventional FEC layer in the Long Term Evolution specifications. The proposed additional layer is called a graceful degradation (GD)‐FEC layer and maintains desirable service quality even under burst data loss conditions of a few seconds. This paper also proposes a non‐delayed decoding (NDD)‐GD‐FEC layer that is inherent in the decoding process. Computer simulations and device‐based tests show a better loss recovery performance with a negligible increase in CPU utilization and occupied memory size.     

Reliability and optical properties of LED lens plates under high temperature stress

In this investigation the thermal degradation mechanisms of Bisphenol A Polycarbonate (BPA-PC) plates at the temperature range 100–140 °C are studied. The BPA-PC plates are currently used both in light conversion carriers in LED modules and optical lenses in LED-based products. In this study BPA-PC plates are aged at elevated temperature of 100–140 °C for a period up to 3000 h. Optical and chemical properties of the thermally-aged plates were studied using UV–Vis spectrophotometer, FTIR–ATR spectrometer, and integrated sphere. The results show that increasing the thermal ageing time leads to yellowing, loss of optical properties, and decrease of the light transmission and of the relative radiant power value of BPA-PC plates. The results also depict that there is not much discoloration within the first 1500 h of thermal ageing. The rate of yellowing significantly increases at the end of this induction period. Formation of oxidation products is identified as the main mechanism of yellowing. An exponential-based reliability model is also presented to calculate the rate of degradation reaction and to predict the life-time of BPA-PC plates.     

基于局部特征尺度分解与复合谱分析的齿轮性能退化特征提取

针对齿轮性能退化过程中振动信号复杂、特征提取困难等问题,提出采用基于局部特征尺度分解与复合谱的退化特征提取方法。改进复合谱分析法,利用离散余弦变换代替复合谱分析法的傅里叶变换,以减少特征信息的遗漏,提高特征信息敏感度;利用局部特征尺度分解法对振动信号进行分解,并采用贝叶斯信息准则与峭度时间序列互相关系数相结合对内禀尺度分量进行筛选,以剔除不必要分量的影响,有效地提取特征信息;利用改进的复合谱分析法对所选取的内禀尺度分量进行融合,提取复合谱熵作为特征向量。该退化特征提取方法运用于齿轮全寿命退化试验中,对实测信号进行特征提取和退化状态识别,结果表明改进后的复合谱熵对齿轮退化状态具有较好的表征能力。     

Effect of plasma process-induced damage on bias temperature instability of MOSFETs

For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, t_ox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage V_th and of linear drain current I_dlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of V_th and I_dlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO₂/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.     

施主型界面态引起槽栅PMOSFET性能退化的特征

基于流体动力学能量输运模型 ,对沟道杂质浓度不同的深亚微米槽栅和平面 PMOSFET中施主型界面态引起的器件特性的退化进行了研究 .研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件 ,且电子施主界面态密度对器件特性的影响远大于空穴界面态 .特别是沟道杂质浓度不同 ,界面态引起的器件特性的退化不同 .沟道掺杂浓度提高 ,同样的界面态密度造成的漏极特性漂移增大 .     

Transfer Hydrogenation in Mesoporous Palladium: Polar Hydrogen Engineering to Realize High Selectivity of Alkyne Semi-Hydrogenation

Semi-hydrogenation of alkynes to industrially important alkenes is earnestly desirable in the fine chemical industry but energetically unfavorable. Herein, it is reported that mesoporous palladium (meso-Pd) catalyst changes the hydrogenation pathways in ethanol with ammonium borane as the hydrogen source, realizing the high catalytic selectivity of ≈99% in semi-hydrogenation of alkynes. Mechanism studies reveal that the active polar hydrogen can be produced and reserved well in the electron-rich mesoporous channels of meso-Pd catalyst, resulting in a transfer hydrogenation pathway, which selectively semi-hydrogenates alkynes into alkenes without over-hydrogenating alkenes into alkanes. Moreover, it is demonstrated that the polar hydrogen engineering of meso-Pd catalyst is highly efficient in various alkyne semi-hydrogenation and chemoselective hydrogenation reactions. The results thus establish metal catalyst mesostructuring as an alternative route for engineering polar hydrogen in the transfer hydrogenation reactions, thus realizing the high catalytic selectivity in various selective catalysis.