汽车代用燃料的应用和发展

评述了汽车代用燃料的现状和未来，压缩天然气和液化石油气将率先大量使用，其次是醇燃料，合成燃料和二甲醚将主要用于某些混合动力车，燃料电池因为能源效率高是最有吸引力的车用能源，将于2010-2015年开始在汽车上实际使用，我国石油工业在提升汽油和柴油质量的同时，应与汽车工业联手开发代用燃料，特别要注意发展燃料电池技术。     

鞍钢现有人造富矿产能及1600万t/a生铁规模的合理炉料结构的探讨

简要介绍了鞍钢现有人造富矿生产能力，分析了鞍钢生产1600万t／a生铁所需要的炉料数量、品种和质量，并提出了解决炉料缺口的方法和措施。     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

发生在北美的合成内燃机油定义之争

加氢异构化油是不是合成油?简述了20世纪90年代末重新激活的合成油定义之争、NAD的裁决以及该裁决对各润滑油公司和合成基础油市场的影响.     

复合绝缘子耐电腐蚀特点及其电蚀老化区域性的差异

为了了解复合绝缘子外绝缘材质电蚀老化状态和区域性的差异,对Al(OH)3耐电腐蚀机理、外绝缘材质中Al(OH)3颗粒分布状态和环境污湿因素的实际情况进行了研究。Al(OH)3颗粒分解成水蒸气、析出白色粉末状氧化铝,并催化生成二氧化碳,将使外绝缘材质逐渐微观减薄和加大表面的粗糙度,而引起电蚀老化的污湿环境因素,近期不可能得到改善,因此必然引起其电蚀老化出现区域性差异。此外,外绝缘憎水表面污珠场强变化引起的电晕也是促使电蚀老化的重要因素。     

针刺合成革基布质量的探讨

分析了针刺合成革基布质量的控制要素 ,以及预针刺机的牵伸比和针刺机的步进图对基布质量的影响     

生产装置在线模拟与优化技术的应用

概述了以通用软件为基础开发化工生产装置严格在线模拟与优化系统的过程，介绍了在线模型的５个层次及其特点，以合成氨为例说明了在线模型的运行和应用情况。     

20号合成烃航空润滑油应用的研究

对20号合成烃航空润滑油的使用性能，包括粘温性、氧化安定性、金属腐蚀性、金属磨损性以及高空起泡性等进行了研究，表明20号合成烃航空润滑油具有良好的使用性能，聚α-烯烃生产航空润滑油是合理的工艺路线。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.