高功率板条固体激光器研究的进展

本文对高功率板条固体激光器研究的进展和应用前景作了综合评述。结合作者部分工作,对板条激光器的热效应、聚光器和光学谐振腔等关键问题和技术进行了物理分析。     

转子系统热膨胀状态下固有横振频率

把转子的惯性力看成作用在轴上的外力,采用新的非线性渐近法研究热膨胀对转子系统固有横振频率的影响.     

Optimizing Thermal Process for Canned White Beans in Water Cascading Retorts

Based on thermal degradation kinetics and heat transfer expressed as the Ball formula method, a simplified approach was used to optimize sterilization processes for thermal softening of white beans (Phaseolus vulgaris, subsp. nanus Metz., variety Manteca de Leon) Constant retort profiles in a still and end-over-end rotary water cascading retort (Barriquand Steriflow) were used. Quality attributes of beans processed at the optimum were evaluated by a trained taste panel and by a tenderometer. Both approaches could distinguish (P<0.01) between attributes of products from optimal rotary and still processes. End-over-end rotation resulted in faster heat penetration and better quality retention of beans. Texture of white beans processed at 4° or 8°C from the optimal temperature could be distinguished (P<0.01) by the sensory panel and by the tenderometer.     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

Thermal Diffusivity in Supercritical Fluids Measured by Thermal Lensing

Thermal diffusivities of supercritical CO₂ and C₂H₆ were determined over a wide density range with a photothermal technique. The thermal lens, formed by the degradation of the absorbed light energy as heat by the sample, allows the employment of a nonequilibrium method in the critical region. Controlling the refractive-index gradient, i.e., a density gradient, perturbations can be maintained at levels where convection is negligible. An easy-to-operate setup allowed us to measure thermal diffusivities in the density ranges 5 to 20 mol·dm^–3 for CO₂ at 308 and 313 K and 2 to 12 mol·dm^–3 for C₂H₆ at 308 K with a standard precision of 15%.     

家电产品常用板材的选用

本文首先介绍国内和日本、德国、俄罗斯等国冷轧薄钢板及镀锌薄钢板的牌号、标记识别及生产地及与我国家标准薄钢板牌号的相互之间的关系，并比较具体地介绍冷轧板的实效性、镀锌薄钢板的锌层特性等诸多方面的状况。从而帮助我们在设计、制造家电产品中，比较正确地选择合适的板材。     

Effect of water inlet velocity on thermal stratification in a mantled hot water storage tank

Thermal stratification in a mantled hot water storage tank is analysed numerically for different water inlet velocities. The aim is to obtain higher thermal stratification and supply hot water for usage as long as possible. Twelve different water inlet velocities to the hot water storage tank are considered. The numerical method is validated by comparing its results against experimental and numerical results from the literature. It turned out that the results obtained from the numerical analysis have shown very good agreements with the results from previous works. As a result, the water temperature in the tank increases with the increase of the water inlet velocities to the mantle but this increment is not proportional. After a period of operation of 7.2 h, which corresponds to the average sunshine duration in Turkey, temperature increments of 6.5 and 35 K have been estimated for the hot water inlet velocities of 0.01 and 0.3 m s^?1, respectively, at a radial distance of 0.1 m and a height of 1 m inside the storage tank. Copyright © 2005 John Wiley & Sons, Ltd.     

非AWGN环境下调制类型自动识别

在非AWGN环境下，针对CW，AM，FM，OOK，PSK，QPSK，16QAM，FSK，MSK，SSB十种混合调制信号，对调制类型特征提取方法和自动识别算法进行了分析、综合、设计和计算机仿真。提出了梯层电平分析方法、频率瞬时信号分析、剔除载波的归一化能量分析、平方后信号的频谱分析、四次方后的信号频谱分析等方法。当SNR=10dB时，计算机仿真结果是正确识别率不低于95％，自动识别的平均处理时间为不超过10s。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.