电双稳薄膜阻抗转变机理研究

采用真空蒸发的方法交替沉积Ag和TCNQ分子制备了Ag TCNQ金属 有机络合物薄膜 ,并研究了多种外加电压激发下膜的电阻转变特性。发现在转变过程中存在着一种能量效应 ,即当外电压超过某一阈值后 ,完成转变的能量不变。对此现象的可能解释是薄膜内分子在一定的外部电场能量诱导下发生重排 ,致使电导率发生跃变     

崇礼东坪黄金公司缓倾斜薄矿体采空区综合治理

在采空区调查的基础上,以FLAC工程力学分析软件为手段,应用“诱导崩落和封闭采空区综合治理”理论,进行缓倾斜薄矿体采空区综合治理研究.该项研究与实践为缓薄矿体采空区综合治理提供了可供借鉴的经验,并为矿山创造了可观的经济效益.     

T型薄壁管节点应力集中系数有限元分析

通过有限元的方法,分析了T型薄壁管节点受平面内弯矩作用下的疲劳行为,得到了应力最大值的位置和拟合出用于预测T型薄壁管节点受平面内弯矩作用下的应力集中系数的参数公式。     

EXL能谱仪薄样品X线的定量分析

研究了Link公司能谱仪中RTS软件（薄膜定量分析软件）可靠性及适用性。实验结果表明：RTS软件定量分析结果误差较小。但对C、N、O等轻元素定量分析，试样厚度小于1500以下时，结果才比较可靠。     

Electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS).It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices.Electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates.The targets used for the evaporation were first prepared by electron beam melting.The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM).The mechanical property of the thin films was evaluated by the nano-indentation test.The martensitic transformation temperature was measured by differential scanning calorimetry (DSC).It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials.Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation.Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains.The hardness and elastic modulus of thin films decreases with an increase in Ti contents.     

X射线衍射-拉伸法测薄膜应力

薄膜应力的测量一直是一个困难的问题。本文尝试用一种新的方法——X射线衍射-拉伸法,对薄膜的应力进行检测,与侧倾法实验结果相比较,X射线衍射-拉伸法更为准确与可靠。     

Structural stability of single-layered LaNi4.25Al0.75 film and its electrochemical hydrogen-storage properties

AB5-based hydrogen storage thin fdms （LaNi4.25Al0.75）, deposited on Cu substrate by dc magnetron sputtering were investigated in this study. X-ray diffraction （XRD） revealed that the microstructure of the layer was in crystal form. SEM and AFM analyses proved that the film appeared to be rather rough with numerous randomly sized pores of approximately 15-40 in nm diameter. Structural stability of the film was examined by the combined analyses of DSC, XRD, and SEM, which indicated that this film maintained its structural stability below 500 K or so, and a network structure was observed on the film after being heated at 700 K for 30 min. Electrochemical hydrogen-storage properties of the films were investigated by simulated battery tests. It was found that single-layered LaNi4.25A10.75 film exhibited electrochemical hydrogen-storage properties similar to typical AB5 alloys in bulk, and the maximum discharge capacity of the film was about 220 mAh/g. After 20 charge/discharge cycles, small needle-shaped aluminium oxide was formed on some fractions of the film surface.     

磁控溅射制备In2O3-SnO2薄膜与分析

选择In2LO3与SnO2质量比11的靶材为溅射源,采用磁控溅射法沉积了ITO薄膜,讨论了溅射氩气压强、氧流量、基体温度对薄膜透射率和方阻的影响,深入分析了其机理.研究结果表明溅射时采用低Ar压强更有利于降低ITO薄膜的电阻率,并确定最佳氩气压强为0.2 Pa,厚度为120 nm的ITO薄膜在可见光区的透过率可达到90%;氧流量能明显改变薄膜的性能,随着氧流量从0增加10 L/min(标准状态下,下同),载流子浓度(N)则由3.2×1020降低到1.2×1019/cm3,N值的变化与ITO薄膜光学禁带宽度(Eg)的变化密切相关.振子模型与实验结果吻合,并确定了ITO薄膜的等离子波长(λp=1 510 nm).薄膜随方阻减小表现出明显的"B-M"效应.通过线性外推,建立了直接跃迁的(αE)2模型,并确定了薄膜的Eg值(3.5～3.86 eV).     

EFFECT OF RESIDUAL STRESS ON THE MARTENSITIC TRANSFORMATION OF SPUTTER-DEPOSITED SMA THIN FILMS

TiNi thin films were sputter-deposited on circular single-cry stal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation.