薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

Sensitizing Mechanism and Adsorption Properties of Dye—Sensitized TiO2 Thin Films

The dye-sensitized TiO2 complex films were prepared by the dye coat onto TiO2 surfaces,and the sensitizing mechanism and adsorption properties of the dye-sensitized TiO2 complex films were inverstigated.The influence of the application conditions of dye adsorbed on TiO2 films on the amount of dye adsorption was discussed.Experimental results show that the concentration,the temperature of dye solutions and the dipping time of TiO2 films in the dye solutions have a significant influence on the amount of dye adsorption.Cell test indicates that the conversion efficiency of light to electricity increases with the amount of dye adsorption.     

球罐活性缺陷的模糊评定方法

根据国内外有关标准和文献,利用模糊数学中的模糊描述和隶属度等概念,首次采用多级模糊综合评定理论,分层次地把活性缺陷的主要监测信息(即声发射源信息)和专家们的经验考虑在内,建立在用球形贮罐声发射源严重度多级模糊综合评定模型和方法,并编制计算机数据分析和处理程序,使评定结果趋于更合理和可靠.并给出在用球形贮罐声发射源严重度多级模糊综合评定算例,结果表明,该评定方法可以达到定量化的程度,与局部无损复验结果有良好的一致性.     

硫化胶交联结构及其性能

综合讨论了聚合物／聚合物之间的交联结构及聚合物／填料之间的偶联结构对硫化胶抗硫化返牟性，抗氧老化性及动态疲劳性能的影响。     

Sputter deposition technology as a materials engineering

Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to make man-made superlattice including high-T _C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming century.     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

用红外热象技术研究有凸台热源倾斜板的散热

本文介绍红外热象技术在工程热物理研究中某些应用的探索。作为实例，通过热象技术，实验研究了具有水平凸台离散热源的倾斜板的散热，在研究它的自然对流换热部份结合利用激光全息干涉技术。此间着重于分析倾斜角对散热的影响。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

变结构变参数设计方法及其在机械CAD中的应用

提出了一种新颖的机械结构设计思想－变结构变参数设计方法，并结合实例，阐述了变结构变参数设计的概念、原则、实施措施和意义。由此对Ｉ－ｄｅａｓ软件包进行了二次开发，编制了发动机曲轴专用ＣＡＤ软件程序，并用某型号发动机曲轴进行了验证。