Aerosol-jet-printed, high-speed, flexible thin-film transistor made using single-walled carbon nanotube solution

A high-purity, surfactant-free and stable SWCNT aqueous solution was prepared using a series of chemical and physical processes. The SWCNT solution has a very limited amount of carbonaceous impurities, if any, and a total metal content of well below 500 ppb. It is stable for months without the addition of surfactant. Such SWCNT aqueous solution enables ink-jet printing of the entire fast, flexible SWCNT-based field-effect thin-film transistor (FE-TFT) at room temperature without the engagement of any traditional dry or wet chemical processes used for fabricating silicon-based transistors. High-speed SWCNT-based flexible FE-TFTs were printed using Aerosol Jet^® printing technology. The printed flexible FE-TFTs were characterized to have a current ON-OFF ratio of greater than 130 with an operation frequency of greater than 5 GHz.     

基于薄膜工艺的x波段下变频器设计

本文介绍了一个基于薄膜电路工艺设计、加工的X波段下变频器.首先对整体方案进行分析论证,然后运用安捷伦公司的ADS仿真设计软件,对射频及中频滤波器、朗格电桥、低噪声放大器和混频器等电路单元及变频器系统进行了仿真设计.最后经过加工测试验证,该变频器性能指标良好.其工作频率为9.35GHz - 9.85GHz,变频增益≥26dB,噪声系数≤2dB,P01dB压缩点功率≥10dBm,输入、输出驻波≤1.3,镜像抑制比≥50dB;本振输入为0±1dBm.整个电路腔体结构尺寸为70mm×20mm×10mm.     

Digital Laser Micropainting for Reprogrammable Optoelectronic Applications

Structural coloration is closely related to the progress of innovative optoelectronic applications, but the absence of direct, on-demand, and rewritable coloration schemes has impeded advances in the relevant area, particularly including the development of customized, reprogrammable optoelectronic devices. To overcome these limitations, a digital laser micropainting technique, based on controlled thin-film interference, is proposed through direct growth of the absorbing metal oxide layer on a metallic reflector in the solution environment via a laser. A continuous-wave laser simultaneously performs two functions—a photothermal reaction for site-selective metal oxide layer growth and in situ real-time monitoring of its thickness—while the reflection spectrum is tuned in a broad visible spectrum according to the laser fluence. The scalability and controllability of the proposed scheme is verified by laser-printed painting, while altering the thickness via supplementary irradiation of the identical laser in the homogeneous and heterogeneous solutions facilitates the modification of the original coloration. Finally, the proof-of-concept bolometer device verifies that specific wavelength-dependent photoresponsivity can be assigned, erased, and reassigned by the successive application of the proposed digital laser micropainting technique, which substantiates its potential to offer a new route for reprogrammable optoelectronic applications.     

Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator

The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lower drain currents and more pronounced shifts in the threshold voltage upon reversal of the gate voltage sweep direction, together with a decrease in the field-effect mobility. These characteristic variations were explained in terms of two distinctive actions of polar H₂O molecules in pentacene TFT. H₂O molecules were suggested to diffuse under the source and drain contacts and interrupt the charge injection into the pentacene film, whereas those that permeate at the pentacene/PMMA interface retard hole depletion in and around the TFT channel. The diffusion process was much slower than the permeation process. The degraded TFT characteristics in air could be recovered mostly by storing the device under vacuum, which suggests that the air instability of TFTs is due mainly to the physical adsorption of H₂O molecules within the pentacene film.     

可编程控制波长调谐的环形掺铒光纤激光器

提出了一种新型的可调谐光纤激光器,器件采用介质薄膜干涉滤波器进行波长可编程调谐,调谐范围超过38 nm(1 526.5～1 564.6 nm),中心波长可精确调谐到C波段指定的ITU-T波长栅格的标准中心波长处,3 dB带宽小于0.08 nm,25 dB带宽小于0.22 nm,波长稳定性优于0.01 nm,边模抑制比大于60 dB,最大输出光功率35.6 mW,功率稳定性优于±0.02 dB,阈值泵浦功率和斜率效率分别为5.8 mW和36.6%.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

薄膜太阳电池用改进型绒面结构MOCVD-ZnO:B透明导电薄膜研究

利用低压MOCVD技术在玻璃衬底上生长了改进型绒面结构ZnO:B薄膜。改进型ZnO:B薄膜包含两层薄膜,第一层采用传统工艺技术生长了类金字塔状晶粒,第二层借助相对低温生长技术获得了类球状晶粒。典型的双层生长技术获得的MOCVD-ZnO:B薄膜具有相对高的电子迁移率~27.6 cm2/Vs,主要归因于提高了晶界质量,减少了缺陷态。随着第二层修饰层厚度的增加,MOCVD-ZnO:B薄膜的绒度提高,而光学透过率有所下降。相比于传统工艺生长的ZnO薄膜,双层结构的MOCVD-ZnO:B薄膜应用于硅基薄膜太阳电池展现了较高的太阳电池转化效率。     

多晶硅薄膜晶体管RPI模型的直流参数提取

多晶硅薄膜晶体管(TFT)在有源液晶显示器中的应用充分显示了它的性能优点。对多晶硅TFT进行模型分析和参数提取是理解多晶硅TFT工作原理和指导制备的有效途径。归纳并讨论了多晶硅薄膜晶体管RPI模型直流参数的提取策略。此参数提取步骤简单,并能准确地提取所有工作区的基本直流参数,如阈值电压、漏源区串联寄生电阻、有效沟道长度、迁移率等。参数提取的方法将为RPI模型的电路仿真提供有益的参考。最后,提出了改进RPI模型参数提取策略的方向,包括提高泄漏电流参数、迁移率参数的准确度等。     

Photonic devices based on thin-film lithium niobate on insulator

Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transparency from visible to mid-infrared,large electro-optic,piezoelectric,and second-order harmonic coefficients.The fast-developing micro-and nanostructuring techniques on LNOI have enabled various structure,devices,systems,and applications.In this contribution,we review the latest developments in this platform,including ultra-high speed electro-optic modulators,optical frequency combs,opto-electro-mechanical system on chip,second-harmonic generation in periodically poled LN waveguides,and efficient edge coupling for LNOI.     

Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator

An organic thin-film transistor (OTFTs) having OTS/SiO₂ bilayer gate insulator and MoO₃/Al electrode configuration between gate insulator and source–drain (S–D) electrodes has been investigated. Thermally grown SiO₂ layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO₂, surface energy of SiO₂ gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO₂ bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO₃/Al electrode has similar source–drain current (I_DS) compared to the device with Au electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance.