Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

试论融资租赁项下的进口贸易

阐述了当前跨国公司在合同中普遍采用的融资租赁的性质及融资租赁项下的进口贸易特点。     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

下T6-361井多井防碰绕障技术

下T6—361井是一口双靶定向井，由于受地面和地质条件的限制，必须穿越9口井，其中最近的4口井防碰距仅为13—32m，钻井施工难度大，是一口较典型的多井防碰绕障定向井。在优化井身剖面设计、优选钻具组合、采用导向钻井技术的基础上，采取了一系列安全钻进措施，顺利钻至设计井深。对该井的地质工程设计、井眼轨迹控制及防碰绕障技术等进行了介绍，对同类型井的施工有一定的借鉴。     

建立预算资金行业财务管理中心的探索

会计集中核算制度是财政体制改革的一项重要举措,它对改变现行财政资金分散收付方式发挥了很大的作用.应在会计集中核算的基础上建立行业财务管理中心,并作为会计集中核算改革的进一步深入和补充.探讨了建立行业财务管理中心的重要性和必要性以及行业财务管理中心的模式,并在行业财务管理中心引入融资理念.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

基底元素表面富集与扩散阻档层

根据An－Ag系统以及An－Cu系统的扩散系数计算，提出了扩散阻挡层模型。利用这个模型对Au－Ag系统进行有关实验，得利了较好的验证。     

The Role of Metastable Atoms in a Homogeneous Atmospheric Pressure Barrier Discharge in Helium

A one-dimensional fluid model for homogeneous atmospheric pressure barrier discharges in helium is presented by considering elementary processes of excitation and ionization including a metastable atom effect. Using this model we investigate the behaviours of the helium metastable atoms in discharges as well as their influence on the discharge characteristics. It is shown that the metastable atoms with a relatively high concentration during the discharge are mainly produced in the active phase of the discharge and dissolved in the off phase. It is also found that the metastable atom collisions can not only provide seed electrons for discharges but also influence the concentration of ions. A reduction of matestable atom density results in a drop in the charged particle densities and causes a qualitative change in the discharge patterns.