核磁共振测井在致密含气砂岩中的应用

通过对核磁共振测井的T₂谱及其T₂截至值的合理选取，解释并获得了鄂尔多斯盆地西缘上古生界山西组、石盒子组致密砂岩储集层的总孔隙度、有效孔隙度、毛细管束缚水体积、可动水体积及渗透率等参数，据此预测的储集层孔隙结构特征与岩心分析测试结果很吻合。研究还发现，致密含气砂岩的T₂谱具有分布范围窄-中等，波形及差谱分析谱位置明显后移、分布中等、呈单峰的典型特征。结合常规测井资料，综合研究了致密砂岩储层特征及其含气层的测井响应。经测试验证，致密含气砂岩储层的核磁共振测井解释结果十分可靠，表明核磁共振测井可用于该区致密含气砂岩复杂储集层评价。     

Kinetics of methylamine conversion on a Pd catalyst in the presence of H2

The kinetics of disproportionation of methylamine to dimethylamine and ammonia in the presence of hydrogen have been investigated over a silica-supported palladium catalyst. At a fixed partial pressure of methylamine, the reaction rate generally increases with decreasing hydrogen partial pressure, approaching a limiting or maximum value at sufficiently low pressures of hydrogen. The existence of a maximum is supported by the observation that the presence of some hydrogen appears to be necessary for the reaction to proceed at a conveniently measurable rate. At a fixed hydrogen partial pressure, the reaction rate increases with increasing methylamine partial pressure. When the methylamine partial pressure is sufficiently low or the hydrogen partial pressure is sufficiently high, the reaction order with respect to methylamine can be somewhat higher than one. At such conditions, a mechanism involving a bimolecular reaction between two partially dehydrogenated methylamine molecules on the surface appears to make a significant contribution to the overall catalytic reaction.     

直流电弧炉长弧泡沫渣技术

本文指出了直流电弧炉采用长弧泡沫渣技术的必要性及该技术的发展现状，总结了炉渣物理性质，化学成分，温度和气源等对炉渣泡沫化的影响，并介绍了电炉泡沫渣的操作工艺及实际应用效果，对宝钢三期１５０ｔＤＣ－ＵＨＰ电弧炉的泡沫渣工艺提出了看法。     

强脉冲辐射场非平衡硬X辐射测量技术

本文介绍了强脉冲辐射场非平衡硬Ｘ辐射谱测量方法。文中对测量原理、关键定标技术进行了叙述。     

方程根数对反应系数法求解负荷的影响

房间围护结构热力系统传递矩阵元素Ｂ（Ｓ）的根数多少或根值大小，直接影响反应系数的精度。其值取多少，国内外没有统一标准。本文结合空调房间的下部送风，针对不同结构的房间进行探讨，发现最小根值取到（—３０）时，即足能满足一般精度要求。     

The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.     

动载荷下应力强度因子的边界元计算

用Ｎａｒｄｉｎｉ－Ｂｒｅｂｂｉａ边界元法计算了动载荷下的应力强度因子，与解析解及有限元解相比较，效果较好。最后对计算结果进行了分析讨论。     

真空阴极弧离子镀类金刚石碳（DLC）膜的碳弧稳定性研究

选用氩气、氩气加氢气、氩气加乙炔等气体作为介质，石墨作为靶材进行真空阴极弧离子镀来制备类金刚石碳膜。石墨电弧有其独特的电弧特性曲线，不同气体介质对碳弧特性的影响不同，磁场的大小对电弧的稳定性有很大作用，碳弧下基片偏流随电弧电压的增加而减小，试验得到表面光滑的类金刚石碳（DLC）膜，对膜的表面进行了SEM分析。     

Huffman algebras for independent random variables

Based on a rearrangement inequality by Hardy, Littlewood, and Polya, we define two-operator algebras for independent random variables. These algebras are called Huffman algebras since the Huffman algorithm on these algebras produces an optimal binary tree that minimizes the weighted lengths of leaves. Many examples of such algebras are given. For the case with random weights of the leaves, we prove the optimality of the tree constructed by the power-of-2 rule, i.e., the Huffman algorithm assuming identical weights, when the weights of the leaves are independent and identically distributed.     

炉外精炼过程中炉渣的有效控制

对连铸机浇铸之有前钢水的炉外处理技术，尤其是对炉渣的控制进行了研究，从而使钢的纯净度和连铸可浇性大大提高。