PCB板酸性蚀刻机理、工艺参数及故障排除

蚀刻工艺是目前PCB板制作中的重要工序之一,特别是随着微电子技术的飞速发展,大规模集成电路和超大规模集成电路的广泛应用,对PCB板制造技术提出了更高的要求,正向着高精度、高密度的方向飞速发展,对PCB板蚀刻的线宽公差也提出更高、更严的技术要求,所以,充分了解和掌握铜在各种类型蚀刻液中的蚀刻机理,并通过严格的科学实验,测定出铜在各类蚀刻液中工艺参数,才能把控好PCB板蚀刻这一关键工序。本文就我公司AS-301型酸性蚀刻液特点、蚀刻机理、来料检测、操作规程、工艺流程、故障排除等作简单介绍。     

超声测厚技术的试验应用与硬件设计

准确评估导弹发射后对发射箱内壁损坏程度,以及对发射装置的维护保养,都需要对发射装置内壁进行检查。而这些工作很多都无法靠人员直接观察,必须利用无损探伤方法对其进行测量。本文在共振式和脉冲反射式两种方式对超声测厚原理进行分析和理解的基础上,设计了超声测厚的硬件电路、并对超声测厚算法进行仿真。深入开展对超声测厚技术领域的研究可以对导弹发射后对发射箱内部破损情况的检验具有重大的实用价值。     

表面处理对FED薄膜型金属电极性能的影响

针对场致发射显示器（FED）金属薄膜与玻璃附着力的特性,提出一种超声清洗和UV清洗相结合技术应用于薄膜型金属电极表面清洁处理。本文分析了超声清洗和UV清洗的基本原理．利用绿灯观测装置和大面积视频显微镜检测不同超声清洗时间和频率以及UV清洗对金属电极质量的影响,利用场发射测试系统测试经表面处理前后的金属薄膜电极性能。实验结果表明,FED金属薄膜电极在32kHz超声清洗10min,Uv光清洗5min后,电极表面干净,无尘埃和有机污物,金属膜层不脱落。显示器场发射性能稳定。     

水下枪械膛口速度的统计试验及其结果分析

为研究水下枪械弹丸出枪口的运动速度变化规律,提出了一种膛口速度测试的新方法:在距枪口3 m内,采用一对标准线圈靶,在多个位置点对弹丸进行多次重复测量,并以各位置点的平均速度进行拟合,再反推到枪口,得到枪口速度及弹丸在距枪口3 m内的速度变化规律.该方法避免了常规多个线圈靶同时测量时由于各线圈靶的动态特性不一致而造成的测...     

发射药强度模拟实验方法

为检验发射药的撞击强度,建立了一种新型的模拟实验装置,用来模拟发射药在自动武器或火炮膛内高温、高压的发射环境,计算分析了实验装置的膛压和影响发射药速度的因素,得出了具有一定价值的结论。     

垂直电镀HDI生产探讨

常规PCB向更高密度的HDI/BUM板的发展是大势所趋,传统电镀难以胜任盲孔电镀;通过对其设备改良和性能测试,传统电镀成功解决生产的实例,对运用垂直电镀生产线生产HDI板从原理、过程、影响的因素几个方面进行了详细的分析。最后对如何在生产过程中进行管理给出了建议。     

Study on Energy Stored in Thin Layers of MEMS Ultrasonic Resonance Separator

The particles suspending in liquid suffer acoustical radiation force from ultrasonic field. The force may cause particles movement and has special advantage to separate particles from liquid in Micro Electro Mechanical Systems （MEMS）. It is important to improve the energy stored in liquid layer so as to increase separation ability for decreasing drive demand in MEMS. Resonance may hugely increase the magnitude and generally be employed in micro separator. The summits of admittance spectrum show the resonance frequencies. It may come from resonance in one layer or multi layers in micro separator. This paper studies the difference of energy stored in layers at each rein frequency. It provides the way to select the most effect separation frequency other than admittance spectrum.     

基于电子技术的声光控制照明电路设计研究

声光控制照明电路的设计及应用,有效降低了小区、工厂等场所夜晚的照明用电.本文从声光控制照明电路设计的意义触发,研究基于电子技术的声光控制照明电路总方案设计理念及电路图,并对该电路图上各个结构进行了讲解,最后就全文作出总结.     

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r_sat and source injection velocity υ_inj were observed, accounting for the large drive current I_Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r_sat is related to a shorter critical length ℓ₀ for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ_inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.