TN型双通道燃烧器在燃用劣质煤锅炉中的应用

针对当前电煤价格升高、煤质下降,许多电厂在燃用劣质煤时,锅炉出现频繁灭火、管壁超温、投油助燃等问题,研制了TN型双通道燃烧器。TN型双通道燃烧器是在原双通道燃烧器原理基础上,增加了“多突扩”和“煤粉浓缩”技术,使更多的煤粉在燃烧器中预热、预燃,其稳燃能力更强。应用TN型双通道燃烧器,可大大提高锅炉的稳燃能力和煤质适应性,降低锅炉助燃油用量,使锅炉运行的安全性和经济性均得到大幅提高,为电力企业降低发电成本提供可靠的技术保障。     

基于T-S模糊再励学习的稳定双足步态生成算法

提出了一种基于T S模糊再励学习的稳定双足步态生成算法 .将再励学习引入T S模糊神经网学习增益参数 ,从而采用较少的模糊规则充分逼近了由ZMP曲线到髋关节轨迹的非线性变化关系 ,并将连续空间的多变量变化转换为一维独立动作增益的并行搜索 .仿真结果和双足机器人Luna的实验数据都验证了算法的可行性 .     

低负荷稳燃和高负荷防结渣复合型燃烧器研究开发

针对电站燃煤锅炉实际存在的低负荷稳燃和高负荷防结渣的矛盾，设计了一种新型复合型燃烧器。为确切了解复合型燃烧器的气固两相流动情况，在单喷口冷模实验台和四角喷燃炉冷模实验台上，对不同结构型式和尺寸的复合型燃烧器进行了大量的冷模试验，推荐了合理的结构和尺寸，为复合型燃烧器在电站锅炉上的应用提供了依据。实炉试验结果表明，设计达到了预期设想。     

基于非线性反馈方法的连续时间稳定线性系统的混沌反控制

提出了连续时间线性稳定系统跟踪任意混沌系统实现混沌化的一般方法，该控制器通过非线性反馈取得，其中的反馈增益矩阵的求取与所跟踪的混沌系统无关，只与原连续时间线性稳定系统的状态矩阵有关。通过跟踪Rossler混沌系统和Lorenz混沌系统说明了该方法的设计过程。仿真结果表明了该方法的有效性和快速性。     

Evaluation of the fracture toughness properties of polytetrafluoroethylene

Polytetrafluoroethylene (PTFE) (Dupont Tradename Teflon) is a common polymer with many structural applications including sheet, gaskets, bearing pads, piston rings and diaphragms. The interest here developed because this polymer is being considered as the major component of a newly proposed `reactive' material with a possible application as a projectile to replace common inertial projectiles. Little mechanical property data is available on this material since it is commonly used only as a coating material with the dominant properties being its low friction coefficient and high application temperature. Previous work (Joyce, 2003) on commercially available sheet PTFE material has demonstrated the applicability of the normalization method of ASTM E1820 (1999), the elastic-plastic fracture toughness standard to develop fracture toughness properties of this material over a range of test temperatures and loading rates. Additional work on the aluminum filled `reactive' derivative of the basic PTFE polymer (Joyce and Joyce, 2004) has also recently been completed. In this work, standard ASTM E1820 fracture toughness specimens machined from sintered pucks of PTFE were tested at four test temperatures and at a range of test rates to determine the J _Ic and J resistance curve characteristics of the PTFE material. The major results are that while crack extension is difficult at standard laboratory loading rates at ambient (21 °C) temperature or above, for temperatures slightly below ambient or for elevated loading rates, a rapid degradation of fracture resistance occurs and cracking occurs in a ductile or even nearly brittle manner.     

W(x,t)普遍结果的推导

用分离变量法求解数理方程定解问题时，要求其第一、二、三类边界条件必须是齐次的。若为非齐次的，必须寻求恰当的辅助函数W(x，t)，进行变换，将其化为齐次的。从稳定条件下的线性非齐次边界条件出发，给出了W(x，t)的统一形式，进而将其推广到非稳定条件下的非齐次边界条件，得到W(x，t)的一般的结果。     

稳定同位素法在追踪地下水污染源中的应用

地下水是人类最洁净的饮用水源,由于其自净能力较弱,一旦受到污染,极难治理.查清污染源是地下水污染防治的前提,而稳定同位素法在判断地下水的补给来源、地下水与地表水之间的联系,以及确定各种污染水源在地下水中的混合比例方面的应用比较成熟,因此在寻找地下水污染源方面有广阔的应用前景.     

Effect of sample radius on stabilityof electromagnetic levitation melting

Based on the power dissipating model of spherical sample in free convection gas medium and the expression of input power, the model of temperature calculation for electromagnetic levitation melting sample was established. Considering the limitation of levitation force and levitation sample temperature, the principle of stability levitation zone computation was determined. A spherical sample (ThDy)Fe2 under the protection of argon gas was examined, and the effect of radius of levitation sample and perturbation on the stable levitation zone was investigated.The results show that longitudinal perturbation and transverse perturbation can shorten the length of stable levitation zone and the range of levitation sample radius. By increasing the sample radius and weakening the perturbation the electromagnetic levitation melting stability of sample can be improved.     

扭轮摩擦传动静力学分析

讨论了扭轮摩擦传动机构稳定运行的力学条件，扭轮所受驱动力和扭轮轴线之间的夹角．驱动力矩机构轴向栽荷与扭轮和传动轴间正压力的关系．通过分析得出了驱动力矩、扭轮所受的来自于传动轴圆周切向驱动力主要取决于扭轮与传动轴间的正压力，扭轮所受驱动力的方向和扭轮轴轴线的夹角随着扭轮与传动轴间正压力和传动轴的轴向栽荷的变化而变化的结论．     

Microcrystalline silicon: An emerging material for stable thin‐film transistors

Abstract— Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been produced at low temperature (150–250°C) by the standard radio‐frequency glow‐discharge technique using three preparation methods: the hydrogen dilution of silane in hydrogen, the layer‐by‐layer technique, and the use of SiF₄‐Ar‐H₂ feedstock. In all cases, a stable top‐gate TFT with mobility values around 1 cm²/V‐sec have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF₄ gas combined with specific plasma treatments of the a‐SiN:H dielectric produces large columns, even at the interface with the dielectric. This leads to stable bottom‐gate TFTs, fully compatible with today's a‐Si:H production facilities, reaching mobility values up to 3 cm²/V‐sec. These devices are an interesting alternative to laser‐crystallized polysilicon thin films in a growing number of applications.