Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

聚酯装置熔体过滤器的国产化改造

熔体过滤器为聚酯装置关键设备,其国产化问题一直未能解决。该文通过对天津分公司200kt/a聚酯装置熔体过滤器改造方案的介绍,探讨了其国产化条件,分析了国产熔体过滤器的结构特点,并与进口过滤器进行了对比,提出了一些看法。     

整体毡纤维体积分数对CVD增密的影响

将3组不同纤维体积分数的整体毡采用等温CVD进行沉积热解炭增密,结合CVD沉积过程中整体毡内气体传质数学模型,研究了整体毡的纤维体积分数对CVD增密过程的影响,研究结果表明:纤维体积低的整体毡沉积时增重率高;纤维体积分数高的整体毡容易获得较高密度的C/C复合材料;纤维体积分数超过35％的整体毡经过300 h的化学气相沉积,坯体的体积密度能达到1.52 g/cm~3。     

Computations of Explosive Boiling in Microgravity

Dynamics of the explosive growth of a vapor bubble in microgravity is investigated by direct numerical simulation. A front tracking/finite difference technique is used to solve for the velocity and the temperature field in both phases and to account for inertia, viscosity, and surface deformation. The method is validated by comparison of the numerical results with the available analytical formulations such as the evaporation of a one-dimensional liquid/vapor interface, frequency of oscillations of capillary waves, and other numerical results. Evolution of a three-dimensional vapor nucleus during explosive boiling is followed and a fine scale structure similar to experimental results is observed. Two-dimensional simulations yield a similar qualitative instability growth.     

盐和水蒸气协同作用下TiAl合金腐蚀性能研究及其防护

研究了在700℃盐和水蒸气协同作用下TiAlNb合金的腐蚀行为以及溅射涂层对TiAlNb合金的防护作用。结果表明，在盐和水蒸气协同作用下，溅射TiAlCrAg涂层对TiAlNb合金具有一定的保护作用。盐和水蒸气协同作用加速了合金以及涂层的腐蚀。挥发性气体氯化物对α2相的循环作用是TiALNb合金腐蚀的主要原因。涂层中较少的α2相以及Laves相中较高的Cr含量是腐蚀有所减缓的主要原因。     

旋转式伽玛刀的辐射剂量学

旋转式伽玛刀的辐射剂量学指标的物理测试在放射性医疗设备投放医院正式临床使用前是必不可少的，是对设备及其附件的设计、加工制造、安装以及电气控制系统等的全面综合性检定。用电离室作辐射剂量学的绝对测量，用胶片法进行相对测量，给出了测量结果并进行了讨论。     

Design and Characterization of the CLIMPAQ,Chamber for Laboratory Investigations of Materials,Pollution and Air Quality*

A test chamber has been developed in order to provide a small and simple emission testing facility capable of testing construction products in a climate where the important climatic parameters such as temperature, ventilation rate and air velocity can be varied independently around typical indoor values. The test chamber CLIMPAQ is made of panes of window glass. Other main surface materials are stainless steel and eloxated aluminium. The chamber has a volume of 50.9 litres and is designed to meet the requirements for quantifying air pollution. In this investigation human subjects acted as air pollution judges, and chemical characterization of the air pollution was carried out. Carpet, linoleum, wall paint and seal- ant were tested simultaneously in the CLIMPAQ and in four other chambers ranging from a full-scale chamber of 28 m³ to a field and laboratory emission cell of 3.5· 10^?5m³. Product ranking is the same in all chambers for the sensory measurements. Emission rates based on sensory measurements differ for all products less than 100 % except for tests in a 3-litre chamber where emission rates were higher. Chemical measurements differ up to approximately 10 times for the same product in different chambers. Deviations appear to be the result of different environmental parameters in the various chambers. Low air concentrations or high specific ventilation rates seem to increase emissions, while differences in air velocities and sink properties may also be the cause of differences in emission rates.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

AlN 粉末制备的热力学分析和实验研究

对制备 AlN 的体系 AlCl_3-NH_3-N_2进行了热力学分析,确立了 AlN 粉末合成所需要的热力学条件.在700～1000℃下,利用无水 AlCl_3和 NH_3的化学气相淀积反应合成得到了高纯 AlN 超细粒子粉末,研究了反应温度、AlCl_3浓度和总流量等对 AlN 粉末理化性质的影响.实验确立了产物低温和高温热处理条件.