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排序方式: 共有915条查询结果,搜索用时 31 毫秒
1.
Pu Mao Jiping Wang Peng Xiao Lixue Zhang Fang Kang Hao Gong 《Ceramics International》2021,47(1):111-120
In this work, we developed a novel system of isovalent Zr4+ and donor Nb5+ co-doped CaCu3Ti4O12 (CCTO) ceramics to enhance dielectric response. The influences of Zr4+ and Nb5+ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr4+ and Nb5+ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu3Ti3.8-xZrxNb0.2O12 (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr4+ and Nb5+ ions than that of single-doped with Zr4+ or Nb5+ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~105) at a frequency range of 102–105 Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr4+ and Nb5+ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus. 相似文献
2.
The n-type thermoelectric Bi1.9Lu0.1Te3 was prepared by microwave-solvothermal method and spark plasma sintering. The magnetic field and temperature dependences of transverse magnetoresistance measured within temperature 2–200 K interval allow finding the peculiarities characteristic for strongly disordered and inhomogeneous semiconductors. The first peculiarity is due to appearance of linear-in-magnetic field contribution to the total magnetoresistance reflected in a crossover from quadratic magnetoresistance at low magnetic fields to linear magnetoresistance at high magnetic fields. The linear magnetoresistance can result from the Hall resistance picked up from macroscopically distorted current paths due to local variations in stoichiometry of the compound studied. The second peculiarity is that both linear magnetoresistance magnitude and crossover field are functions of carrier mobility which is in agreement with the Parish and Littlewood model developed for disordered and inhomogeneous semiconductors. An increase in the mobility due to a decrease in temperature is accompanied by an increase in the magnetoresistance magnitude and a decrease in the crossover field. Finally, the third peculiarity is related to the remarkable deviation of the total magnetoresistance measured at various temperatures from the Kohler's rule. Presence of strong inhomogeneity and disorder in the Bi1.9Lu0.1Te3 structure concluded from the magnetoresistance peculiarities can be responsible for the remarkable reduction in the total thermal conductivity of this compound. 相似文献
3.
A systematic investigation of the magnetic and transport properties of Ti doped La0.67Ca0.33MnO3 was reported. The Ti substitution for Mn ions results in a reduction in ferromagnetism and conductivity. The metal-insulator transition temperature is close to Curie temperature which decreases from 274 to 82 K as x increases from 0 to 0.17. The most important effect of Ti doping is to introduce spin clusters in the samples due to the distortion of local lattice and the inhomogeneous magnetic structure induced primarily by the random distribution of Mn ions. A maximum magnetoresistance ratio as large as 90% in 1 T at 122 K was obtained for the sample with x =0. 055, which is four times larger than that obtained for LCMO sample at 272 K. There is a remarkable field-history dependent MR in the cooling process for the doped samples while such phenomenon disappears in the warming run. The resistivity follows well the variable range hopping behavior in paramagnetic state. Both the size effect and spin dependent hopping of carriers between the spin clusters should be considered in this system. 相似文献
4.
The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied .With increasing the substituting amount of Gd,the phase transition temperature of metal-isolator for the samples decreases,the corresponding peak resistivity increases,the Curie temperature decreases monotonically.The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude.The effects of substituting Gd can be explained in terms of the lattice effects.An irreversible MR behaviour was observed in Gd-substituting compounds.This effect became marked when the substituting amount of Gd was greater than 7%.A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%. 相似文献
5.
J. Okabayashi M. Watanabe H. Toyao T. Yamaguchi J. Yoshino 《Journal of Superconductivity and Novel Magnetism》2007,20(6):443-446
We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures
using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for
current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that
threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of
104 A/cm2 is estimated considering the effect of current pulse width. 相似文献
6.
测定了La1-xAx(MnB)O3型巨磁电阻钙钛矿化合物在不同组成时的居里温度,利用A位离子对晶格能的贡献和B位离子极化力的变化分别对A和B位离子掺杂及A,B位离子组成同时变化时钙钛矿的居里温度进行了分析,结果与实验一致。 相似文献
7.
软磁材料中存在巨磁阻抗 (giantmagneto impedance ,GMI)效应以及与之相同来源的应力阻抗 (stress impedance ,SI)效应 ,利用这两种效应可以制成具有高灵敏度的微型化的磁场和应力 应变传感器。本文基于传感器的实际应用 ,对图形化的、较大磁致伸缩的FeSiB单层和多层薄膜的巨磁阻抗和应力阻抗效应中频率和退火的影响进行了研究。结果表明 ,对于两种效应 ,经过退火处理的单层和多层膜均可在较低的频率下得到较高的灵敏度 ,而多层膜中的应力阻抗效应将为新型高灵敏传感器的设计和研制开辟一条崭新的途径 相似文献
8.
9.
T. Ohgai I. Enculescu C. Zet L. Westerberg K. Hjort R. Spohr R. Neumann 《Journal of Applied Electrochemistry》2006,36(10):1157-1162
Polycarbonate templates of (30±1) μm thickness containing cylindrical etched-track nanochannels of (500±50) nm diameter were used for electrodeposition of Ni nanowires. Using 104 channels per cm2, the most favourable deposition potential of − 1.0 V was determined in a potentiostatic mode by varying the deposition potential with respect to an Ag/AgCl reference electrode over a range between − 0.1 V and − 1.5 V. The deposition efficiency at − 1.0 V was estimated around 10%. The resulting single wires had a resistance around 200 Ω and showed an anisotropic magnetoresistance (AMR) effect of 1%, applicable to directionally sensitive magnetic field sensors. 相似文献
10.
利用Hammerstein模型对超磁致伸缩作动器(Giant magnetostrictive actuators,GMA)的率相关迟滞非线性进行建模,分别以改进的 Prandtl-Ishlinskii(Modified Prandtl-Ishlinskii)模型和外因输入自回归模型(Autoregressive model with exogenous input,ARX)代表Hammerstein模型中的静态非线性部分和线性动态部分,并给出了模型的辨识方法. 此模型能在1~100Hz频率范围内较好地描述GMA的率相关迟滞非线性. 提出了带有逆补偿器和H∞鲁棒控制器的二自由度跟踪控制策略,实时跟踪控制实验结果证明了所提策略的有效性. 相似文献