Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

管壳式换热器流场三维数值模拟

采用多孔介质方法 ,在PHOENICS 3 3程序的基础上建立了换热器的三维流动计算模型。引入体积穿透率、表面穿透率、分布阻力等来描述换热器内的管束。模型通过计算Halle等[1] 的实验工况来进行验证 ,并尝试用于计算 2 0 0MW低温供热堆主换热器内的流场     

多孔挡板流化床还原UO3反应器模型的研究

针对ＵＯ＿３的Ｎ＿２还原反应建立了多孔挡板流化床反应器模型。将多孔挡板床的每一级视为具有相似的流动状态，每一级的上、下段称为稀、密相段，分别用鼓泡床和活塞流模型描述。该模型的计算值与￠６３ｍｍ的多孔挡板床Ｈ＿２还原ＵＯ＿３的热态实验值能较好的吻合。还预计了还原温度、操作气速和挡板结构参数对固相转化率的影响，为该类反应器的工业设计、放大和优化提供了依据。     

压水堆硼稀释事故的计算

一、概述核电厂压水堆的初始过剩反应性是通过控制捧、固体可燃毒物和溶解在主回路冷却剂中的硼酸等三种方式联合控制的。随着反应堆的燃耗和裂变毒物的积累,堆的过剩反应性不断减少,需要通过化容系统,控制硼酸的浓度来进行补偿。如果化容系统发生故障或操作员误操作,就会给回路注入无硼或低于规定浓度的补给水,给反应堆引入正反应性,造成硼稀释事故。按核安全法规的要求,应对换料、冷停堆、热停堆和启动等工况进行计算,并要求在这些     

Transient operation of a catalytic liquid-liquid plug flow reactor for kinetics measurements

A centrifugal partition chromatograph (CPC) was used as a liquid-liquid catalytic reactor for the isomerisation of hexen-3-ol into ethylpropylketone with a water soluble rhodium catalyst. Global mass transfer coefficients were measured and shown to depend on both the nature of the solute and the flow rate. Liquid-liquid partition isotherms were also determined with the CPC using elution chromatography. Finally, a reactor model was derived to account for the experimental results obtained both under stationary and transient (pulse) conditions. A parameter sensitivity evaluation is also presented.     

A formal model of asynchronous communication and its use in mechanically verifying a biphase mark protocol

We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

超低膨胀陶瓷K_（2x）Ba_（1－x）Zr_4（PO_4）_6系统的X射线衍射

用高温Ｘ射线衍射方法对磷酸锆钡钾系统陶瓷材料的各向异性热膨胀作了研究．对七个组份试样的７７套高温Ｘ射线衍射图作了仔细的指标化和精密点阵常数测定．点阵常数随温度作非线性变化·对Ｋ_２ｘＢａ_１－ｘＺｒ_４（ＰＯ_４）_６的不同组份不同温度（３００～１３００Ｋ）的热膨胀系数。α_ａ、α_ｃ、　作了测定·该系统零膨胀陶瓷的组份为Ｋ_１．１６Ｂａ_０．４２Ｚｒ_４（ＰＯ_４）_６（ｘ＝０．５８）