Improved optical photoluminescence by charge compensation in the phosphor system CaMoO4:Eu

It has been found that charge compensated CaMoO₄:Eu³⁺ phosphors show greatly enhanced red emission under 393 and 467 nm-excitation, compared with CaMoO₄:Eu³⁺ without charge compensation. Two approaches to charge compensation, (a) 2Ca²⁺ → Eu³⁺ + M⁺, where M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ acting as a charge compensator; (b) 3Ca²⁺ → 2Eu³⁺ + vacancy, are investigated. The influence of sintering temperature and Eu³⁺ concentration on the luminescent property of phosphor samples is also discussed.     

MAX197芯片在现场总线智能从站开发中的应用

介绍一种PROFIBUS-DP智能从站的设计方案,应用MAX197实现8路A／D转换。由于MAX197占用较少的CPU资源,因此,该智能从站采用此芯片作为前端的信号采集和数据处理部分。     

虚拟环境中三维CAD模型数据优化及重组

三维CAD在虚拟环境中有着广泛的应用,其模型数据由于具有复杂的结构且拥有较多的冗余信息而不能高效的运用到虚拟环境的构建中。基于此,针对虚拟场景渲染对数据模型的要求,给出了三维CAD模型数据优化及重组方法,该方法能去除冗余信息,优化文件结构,丰富数据内容,且能够有效地提高虚拟环境的绘制效率。     

3ds max地形建模研究

论述3ds max三种地形建模方法:等高线地形建模、置换修改器地形建模、DreamScape插件地形建模,并探讨这三种地形建模方法的优劣。     

Slicing Method for Reverse Engineering Based on Image Mosaic

Reverse engineering dealing with images is traditionally based on image processing and contour recognition. A new method is presented based on the combination of sectional slicing with image mosaic. Sectional contours of the target object are generated by colorful liquid or laser scanning, these images from different views are fused into a set of complete cross-sectional images, thereby the whole practical model is reconstructed in 3D space.     

The Skeptical Explorer: A Multiple-Hypothesis Approach to Visual Modeling and Exploration

The primary intent of this work is to present a method for sequentially associating three-dimensional surface measurements acquired by an autonomous exploration agent with models that describe those surfaces. Traditional multiple-viewpoint registration approaches are concerned only with finding the transformation that maps data points to a chosen global frame. Given a parts-based object representation, and assuming that the view correspondence can be found, the problem of associating the registered data with the correct part models still needs to be solved. While traditional approaches are content to group segmented data sets that geometrically overlap one another with the same part, there are cases where this causes ambiguous situations. This paper addresses the model-data association problem as it applies to three-dimensional dynamic object modeling. By tracking the state of part models across subsequent views, we wish to identify possible events that explain model-data association ambiguities and represent them in a Bayesian framework. The model-data association problem is therefore relaxed to allow multiple interpretations of the object's structure, each being assigned a probability. Rather than making a decision at every iteration about an ambiguous mapping, we look to the future for the information needed to disambiguate it. Experimental results are presented to illustrate the effectiveness of the approach.     

数模转换器的EWB仿真分析与研究

为解决实际电子产品设计和开发过程中的问题,以EWB仿真软件为例,详细讨论了D/A数模转换电路和集成DAC芯片的仿真。根据仿真结果得知:温度的影响:当温度从0℃升高到100℃的过程中,输出电压快速升高,最后波动幅度逐渐减小,趋于恒定;电路参数的影响:当R1从1kΩ线性增大到10kΩ,初始输出线性升高,后由于非线性失真趋于恒定,因此设计倒T形电路网络D/A转换器时需注意电阻的精确度。对于集成DAC,当数字输入值较高时转换精度下降。     

一种基于FPGA的调制指数可调的数字化调频方案

该方案实际上是一个输出频率受控的直接数字频率合成(DDS)系统。通过A/D转换器件将调制信号转换成数字信号,用该数字信号控制DDS的频率控制字,形成输出频率受模拟信号控制的正弦波,从而实现了调频。通过在A/D转换值后补零的方法,可控制调频波的调制指数。系统由FPGA实现。EDA软件Max PlusⅡ的仿真和系统的实际输出波形都表明该数字化调频系统的调制指数可在很大范围内变化。     

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO₂ and GaN, whereas the absence of an interfacial layer at Al₂O₃/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al₂O₃ employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO₂ and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO₂/Al₂O₃ film is lower than that of HfO₂, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties.