The determinants of heat-shock element-directed lacZ expression in Saccharomyces cerevisiae.

Heat-shock induction of heat-shock protein genes is due to a specific promoter element (the heat-shock element, HSE). This study used lacZ under HSE control (HSE-lacZ) to characterize HSE activity in Saccharomyces cerevisiae cells of different physiological states and differing genetic backgrounds. In batch fermentations HSE-lacZ induction by heat shock was maximal in exponential growth, and showed marked decline with the approach to stationary phase. Expression in the absence of heat shock was unaffected by growth phase, indicating that the growth-dependent expression of many yeast heat-shock genes uses promoter elements in addition to the HSE. Heat-induced expression was strongly influenced by the temperature at which cultures were grown. While basal, uninduced expression was constant during growth at different temperatures to 30 degrees C, induction by transfer to 39 degrees C was reduced by increases in growth temperature as low as 18-24 degrees C. Maximal HSE-lacZ induction (30- to 50-fold) was in cultures grown at low temperatures (18-24 degrees C), then heat shocked at 39 degrees C. Ethanol was a poor inducer. Mutations having little effect on HSE-lacZ expression included a respiratory petite; ubi4 (which inactivates the poly-ubiquitin gene); also ubc4 and ubc5 (which each inactivate one of the ubiquitin ligases involved in degradation of aberrant protein). pep4-3 increased both basal and induced beta-galactosidase about two-fold, probably because of slower turnover of this enzyme in pep4-3 strains.     

双噁唑啉化合物对PBT的增粘作用

以２．２＇－双（２－唑啉）和双（２－唑啉基）苯作扩链剂，用焙融挤出的方法，对聚对苯二甲酸丁二酯（ＰＢＴ）进行扩链，考察扩链剂的用量、反应时间和反应温度对ＰＢＴ的特性粘度及端羧基含量（ＣＶ）的影响。结果表明，当用２，２＇－双（２－唑啉）作扩链剂时，ＰＢＴ的特性粘度［η］从０．７９９提高到０．９２６ｄＬ／ｇ，ＣＶ降至５ｅｑ／１０￣６ｇ以下；当用双（２－　唑啉基）苯作扩链剂，［η］从０．７６３增至０．９２５ｄＬ／ｇ，ＣＶ降至１０ｅｑ／１０￣６ｇ以下，达到了较满意的扩链效果。     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

不同品位高钛渣对沸腾氯化工艺的影响

分别以94％品位高钛渣和90％品位高钛渣为原料，采用沸腾氯化工艺制备粗TiCl4，分析了两种品位高钛渣对沸腾氯化工艺的影响。结果表明：94％品位高钛渣由于其活性低而对沸腾氯化工艺的影响较大。     

Advances in titanium metal injection molding

The approaches to production of titanium powder injection molded parts are reviewed. Historically, oxygen levels have been too high for structural use (particularly with the Ti-6Al-4V alloy). However, recent advances in starting powders, binders and sintering facilities now allow oxygen levels in the Ti-6Al-4V alloy to be controlled to about 0.2 wt.% oxygen. This should result in significant expansion of the titanium PIM market place into aerospace, automobiles, surgical instruments, dentistry, communication devices (such as computers and cell phones), knives and guns. __________ Translated from Poroshkovaya Metallurgiya, Vol. 46, No. 5–6 (455), pp. 118–125, 2007.     

LD泵浦的声光调Q腔内倍频激光器

研制成用ＬＤ泵浦的声光调Ｑ的Ｎｄ：ＹＶＯ４－ＫＴＰ腔内倍频激光器，得到了ＴＥＭ００模、频率高达１００ｋＨｚ的稳定的５３２ｕｍ绿激光脉冲系列输出，阈值泵浦功率为２７ｍＷ；在连续５７０ｍＷ的泵浦功率下，绿激光脉冲的峰值功率达１１００Ｗ，脉宽为４．６ｕｓ；输出功率稳定，在±５℃的工作温度变化下，输出功率变化小于±２％。此种器件可望得到广泛的应用。     

Interfacial activity and rate of palladium(II) extraction with decyl pyridine monocarboxylates

Decyl isonicotiniate and decyl nicotiniate permit a rapid extraction of palladium(II) from its hydrochloride solutions. Decyl picoliniate is not a suitable extractant. 4-Octylphenylamine can act as a phase transfer catalyst when its concentration in the organic phase is at least 2·5 × 10^?4 M . It seems that the interfacial adsorption of pyridine carboxylates and of 4-octylphenylamine is not the decisive phenomenon in palladium(II) extraction. The negligible protonation of the pyridine-type extractants and the phase transfer catalysis explains well the quick extraction of palladium(II) with the commercial and highly hydrophobic extractant ACORGA CLX-50.     

用EGS4分析9MeV行波直线加速器屏蔽系统

采用了国际上广泛使用的ＭｏｎｔｅＣａｒｌｏ模拟计算程序ＥＧＳ４对海关集装箱检测系统用加速器屏蔽系统进行了辐射模拟分析，与实际测试数据进行分析、比较，解释了特殊剂量分布的原因，提出了系统改进的参考方案。     

SiH_4－O_2体系LPCVD SiO_2薄膜的工艺及其应用

本文研究了ＳｉＨ４—Ｏ２体系ＬＰＣＶＤＳｉＯ２的工艺及设备。为了得到厚度均匀性好的薄膜，改进了反应气体的进气方式和装片舟的结构，获得了每炉１００片、直径为１００ｍｍ的硅片的膜厚不均匀性≤士５％的结果。