As2O3纳米粒的制备和体外治疗肺癌及其抗转移机制实验

采用改良的溶胶-凝胶法制备系列的As2O3纳米粒,用透射电镜、扫描电镜、能谱仪、图像分析系统等进行表征及特性检测．应用MTT法研究As2O3纳米粒体外对细胞的增殖抑制作用;用流式细胞仪测定As2O3纳米粒及亚砷酸诱导细胞的凋亡率;用免疫组织化学半定量法检测As2O3纳米粒及亚砷酸处理细胞后Bcl-2、Bax、CD44v6和P53基因的表达改变．研究结果表明,制备的As2O3纳米粒在电镜下呈圆形或椭圆形,分散性较好,平均直径约为80nm、110nm、130nm、150nm和450nm;体外细胞实验证实As2O3纳米粒抗肺癌A-549细胞的效应强于亚砷酸溶液;免疫组织化学半定量法显示As2O3纳米粒有较强的诱导肺癌细胞凋亡的作用,可能与其改变Bcl-2和Bax基因表达（Bcl-2／Bax比值降低）及促进P53基因的表达、抑制CD44v6基因表达有关．     

First principles calculations of the electronic, dynamical, and thermodynamic properties of the rocksalt ScX (X = N, P, As, Sb)

We have investigated the electronic, dynamical, and thermodynamic properties of the rocksalt ScX (X = N, P, As, Sb) using a plane-wave pseudopotential method within the generalized gradient approximation in the frame of density functional perturbation theory. The calculated lattice constants are found to differ by less than 0.56% from the available experimental values. These materials have the indirect Γ–X band gaps and a wide and direct band gap at the X-point in band structure, which are closer to experimental results than the previous calculations. A linear-response approach is used to calculate the phonon frequencies, the phonon density of states and LO–TO splitting. The obtained phonon frequencies at the zone-center (Γ-point) for the Raman-active and infrared-active modes are analyzed. We also calculate the thermodynamic functions using the phonon density of states, and the calculated values are in nearly perfect agreement with experimental data.     

Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures

We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T _C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T _C of the layer.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Evolution of the optical transitions in AlxGa1 − xAs/GaAs quantum well structures grown on GaAs buffers with different surface treatments by molecular beam epitaxy

Al_0.3Ga_0.7As/GaAs Quantum Well structures were grown by molecular beam epitaxy (MBE) on a 500 nm thick GaAs buffer layer subjected to the following surface processes: a) in-situ Cl₂ etching at 70 °C and 200 °C, b) air-exposure for 30 min. The characteristics of these samples were compared to those of a continuously grown sample with no processing (control sample). We obtained the quantum wells energy transitions using photoreflectance spectroscopy as a function of the temperature (8-300 K), in the range of 1.2 to 2.1 eV. The sample etched at 200 °C shows a larger intensity of the quantum well peaks in comparison to the others samples. We studied the temperature dependence of the excitonic energies in the quantum wells (QWs) as well as in GaAs using three different models; the first one proposed by Varshni [4], the second one by Viña et al. [5], and the third one by Pässler and Oelgart [6]. The Pässler model presents the best fitting to the experimental data.     

矩形和T形截面受弯构件承载力计算

本文根据砼结构设计规范（ＧＢＪ１０－８９）给出了常见矩形，Ｔ形、工字形截面受弯构在Ａｓ‘处于弹性状态或屈服时，所需受拉钢筋Ａｓ的直接求解设计方程，这些方程可用于手算也可用于电算。     

Bionics growth mechanism of nodular eutectic in as–cast manganese steel

It is well known that all substances in the universe exist stably in the lowest energy state, and a ball of substance with the same volume reveals the lowest surface energy. Therefore, without the interference of external factors, many plants grow freely into the nodular form from a nucleus, such as a peach or a plum. It is also found that after modification, the eutectic in as-cast manganese steel grows freely into a nodular shape, the growth pattern of which is similar to that of a peach or a plum. Thus here it is shown that some non-plants have a close parallel growth mechanism to that of plants. The mechanism is used for mutual reference between plants and non-plants when their growth mechanisms are studied.     

As(V) removal using carbonized yeast cells containing silver nanoparticles

The present study involves the development of adsorbent containing silver nanoparticles for arsenate removal using silver reducing property of a novel yeast strain Saccharomyces cerevisiae BU-MBT-CY1 isolated from coconut cell sap. Biological reduction of silver by the isolate was deduced at various time intervals. The yeast cells after biological silver reduction were harvested and subjected to carbonization at 400 °C for 1 h and its properties were analyzed using Fourier Transform Infra-Red spectroscopy, X-ray diffraction, scanning electron microscope attached with energy dispersive spectroscopy and transmission electron microscope. The average size of the silver nanoparticles present on the surface of the carbonized silver containing yeast cells (CSY) was 19 ± 9 nm. The carbonized control yeast cells (CCY) did not contain any particles on its surface. As(V) adsorption efficiency of CCY and CSY was deduced in batch mode by varying parameters like contact time, initial concentration, and pH. Desorption studies were also carried out by varying the pH. The experimental data were fitted onto Langmuir and D-R Isotherms and Lagergren and pseudo second order kinetic models. The CSY was more efficient in arsenate removal when compared to CCY.