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使用光强标定的发射光谱(AOES)测量了CHF3/C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加,成膜基团CF、CF2、CH等的相对密度增大,而刻蚀基团F的密度也会增加,从而使得a—C:F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明,在高CHF3流量下沉积的a—C:F薄膜中含有更高的C—F键成分。可见在a—C:F薄膜的制备中CHF3/(CHF3 C6H6)流量比是重要的控制参量。 相似文献
45.
高抗挤厚壁套管的性能及应用效果评价 总被引:1,自引:1,他引:0
中原油田套管损坏的主要原因是现有套管强度不够,无法抵抗盐膏层段的巨大外挤力。开发了TP130TT型高抗挤厚壁套管,其强度能很好地抵抗盐膏层巨大外挤力。实验室试验表明,各项性能指标达到了设计要求,现场使用取得了很好的效果,解决了中原油田盐膏层段套管强度不足的难题。 相似文献
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Ultra thin (5 nm) silicon oxynitride (SiON) films were fabricated at a low temperature using nitrogen plasma generated by an inductively coupled plasma system. Effects of post-metalization annealing (PMA) of Al/SiON/Si MOS structure on the electrical properties of the SiON films were studied and correlations between the charge trapping states and the leakage current were established. Positive charge trapping by interface states generated by plasma damage was characterized by the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. Hysteresis was observed to be completely removed by PMA while interface state density at the Si mid band gap reduced from 2.2×1013 to 3.7×1011/eV/cm2 and the oxide fixed charge density changed from 3.3×1012 to −4×1011/cm2. The leakage current also decreased significantly, by more than two orders of magnitude, with PMA. The analysis of the leakage current using trap assisted tunneling (TAT) mechanism indicated that with PMA, the trap energy level in the SiON film becomes shallower from 1.3 to 0.7 eV. The positive trapped charges were observed to be annihilated by PMA and the trapping sites became neutral trap centers in the SiON film. This could lead to the reduction in the leakage current component given rise to by TAT. 相似文献
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Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
49.
Investigation into polishing process of CVD diamond films 总被引:1,自引:0,他引:1
A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed. 相似文献
50.
通过对影响气化炉火层各因素的分析,理论与实际相结合,推导出现见性控制气化炉火层的经验式,应用于生产实际中,起到了指导生产的作用。 相似文献