20Gb/s 1∶2 Demultiplexer in 0.18μm CMOS

使用标准0.18μm CMOS工艺设计并实现了1:2分接器.核心电路单元采用一种新的高速、低电压锁存器结构实现.与传统的源极耦合场效应管逻辑结构的锁存器相比,其电源电压更低且速度更快.此外,为了拓展带宽,在缓冲放大电路中采用了负反馈.测试结果表明芯片可以工作于20Gb/s数据速率下.电源电压为1.8V时,包括缓冲电路在内整个芯片的工作电流为72mA.     

用积累型MOS变容管实现的2.4GHz 0.25μm CMOS全集成压控振荡器

基于TSMC 0.25μm CMOS工艺,将一个普通MOS管改进为工作在积累区的MOS变容管,实现了一工作于2.4GHz的全集成压控振荡器(VCO).测试结果表明,采用积累型MOS变容管的VCO具有较大的调谐范围.在2.5V工作电压下,控制电压从0～2.2V,VCO的频率调节范围为2.210～2.484GHz,在2.4GHz时相位噪声为-105dBc/Hz@600kHz,输出功率为-7.55dBm,电流损耗为7mA.芯片面积约为0.35mm2.     

CMOS集成电路静态功耗电流测试的重要性研究

目前,国内生产厂和用户针对CMOS集成电路静态电流的测试,仍基于现有的标准和产品规范。但是,采用这些测试方法来测试合格的器件,在使用过程中却发现了某些电路静态电流超差的现象。通过比较目前国内外的标准和规范所规定的方法,分析其存在的问题,并说明了静态电流测试的重要性。通过实验进行了验证说明,并提出了解决问题的建议。     

W/TiN Gate Thin-Film Fully-Depleted SOI CMOS Devices

TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pMOS can be reduced without changing threshold voltage (VT)，which enhances the mobility.Symmetrical VT is achieved by nearly the same VT implant dose because of the near mid-gap workfunction of TiN gate.The SCE effect is improved when the thin-film thickness is reduced.     

体硅CMOS FinFET结构与特性研究

建立在SOI衬底上的 FinFET结构被认为是最具全面优势的非常规MOS器件结构.本文通过合理的设计将FinFET结构迁移到普通体硅衬底上,利用平面凹槽器件的特性解决了非绝缘衬底对器件短沟道效应的影响,同时获得了一些标准集成电路工艺上的改进空间.运用标准CMOS工艺实际制作的体硅CMOS FinFET器件获得了较好的性能结果并成功地集成到CMOS反相器和环形振荡器中.结构分析与实验结果证明了体硅CMOS FinFET在未来电路中的应用前景.     

On the realization of electronically current-tunable CMOS OTA

A CMOS operational transconductance amplifier (OTA) called as an EOTA, where its transconductance gain can be electronically and linearly tuned is proposed in this paper. The realization method is achieved by squaring the transconductance gain of the balanced CMOS OTA. The EOTA transconductance gain can be linearly tuned by an external bias current for three decades. The linear input-voltage range of about 1 Vp with less than 1% nonlinearity is obtained. The usefulness of the proposed EOTA is demonstrated through application example with a current multiplier. The performance of the proposed circuit is discussed and confirmed through PSPICE-simulation results.     

A high-speed and high-resolution CMOS comparator with three-stage preamplifier

The accuracy of A/D and D/A converters depend largely upon their inner comparators. To guarantee 12-bit high resolution for an A/D converter, a precise CMOS comparator consisting of a three-stage differential preamplifier together with a positive feedback latch is proposed. Circuit structure, gain, the principle of input offset voltage storage and latching time constant for the comparator will be analyzed and optimized in this article. With 0.5 μm HYNIX mixed signal technology, the simulation result shows that the circuit has a precision of 400 μV at 20 MHz. The test result shows that the circuit has a precision of 600 μV at 16 MHz, and dissipates only 78 μW of power dissipation at 5 V. The size of the chip is 210 × 180 μm2. The comparator has been successfully used in a 10 MSPS 12-bit A/D converter. The circuit can be also used in a less than 13-bit A/D converter.     

LC8952型收发器的测试技术研究

叙述了LC8952型收发器的主要功能，并对其基本电路的测试方法进行了简要介绍。     

介绍一种微机实验室微机CMOS保护的方法

本文介绍了一种采用纯软件，利用主板EE ROM剩余空间存放程序而实现的微机CMOS数据保护方法。     

系统级CMOS电路的低功耗设计

随着集成电路规模的增大和工作频率的提高，功耗已经成为面积和性能之外的主要设计目标。低功耗设计可以在不同的设计层次进行考虑，早期的设计确定了系统的构架，对功耗的影响最大，因此本文重点探讨了RTL级和系统级的低功耗设计，具体的途径有：实行有效的功耗管理；采用并行处理和流水线结构；采用分布式的数据处理结构以及用专用电路代替可编程处理器。