0.7CaTiO_3-0.3(La_xNd_(1–x))AlO_3微波介质陶瓷的研究

利用传统固相反应法制备了具有不同LaAlO3含量的0.7CaTiO3-0.3(LaxNd1–x)AlO3(以下简称CTLNA)系微波介质陶瓷,研究了所制CTLNA陶瓷的微观结构和微波介电性能。结果表明,用x=0.5的La3+取代Nd3+能有效促进样品晶粒的均匀分布,降低样品的气孔率。少量添加SrTiO3能进一步增加样品的致密度,提高CTLNA系微波陶瓷的介电性能。经原料组分及工艺优化,制备的0.7(Sr0.01Ca0.99)TiO3-0.3(La0.5Nd0.5)AlO3样品密度高、晶相均匀,其微波介电性能如下:εr=45.87,Q.f=41 612 GHz(4 GHz),τf=10×10–6/℃。     

High photocatalytic activity over starfish-like La-doped ZnO/SiO_2 photocatalyst for malachite green degradation under visible light

In this work,the unique starlike La-doped ZnO-SiO2 photocatalysts were constructed by an evaporation and calcination method and characterized in detail.UV-vis reflectance and DFT calculation confirm that the doping with La allows to obtain a decrease of band gap of ZnO/SiO_2,which enhances visible light absorbance and oxidizing ability.The photoluminescence intensity reduces greatly,indicating more effective separation of the photo generated carriers of La-doped ZnO-SiO2.Photocatalytic activities of Ladoped ZnO-SiO2 with different doping ratios under simulated visible light irradiation were evaluated with malachite green(MG) as a model pollutant.Under optimized conditions including solution pH of 8,15 mg/L of MG solution and 15 mg of catalyst dosage,0.2% La-ZnO-SiO2 exhibits the best catalytic activity in photodegradations of MG in water.The removal and mineralization efficiency of MG can reach 96.1%and 70.9% in 140 min,respectively.The as-prepared catalysts present superior stability and recyclability after four times reuse.Moreover,selective quenching experiments indicate that hydroxyl radical(·OH),hole(h~+) and superoxide radical(·O_2~-) are the main reactive species responsible for MG degradation.Possible mechanism for photocatalytic elimination of MG over La-doped ZnO/SiO_2 photocatalyst is finally proposed.     

低温固态反应制备纳米BaTi1-xZrxO3介电材料

采用低温固态反应合成了一系列BaTi1-xZrxO3固溶体纳米粉末（0≤X≤0．3）。经XRD证明,产品为立方晶系的完全互溶取代固溶体。TEM形貌观察,粒子为均匀球形,平均粒径70nm。通过制陶实验,分别测定了该系列固溶体的室温介电常数、介电损失。结果发现,采用低温固态反应在BaTiO3中掺入适量锆以后,室温介电常数由纯钛酸钡的3000提高到8600,而介电损失却下降了一半。     

Cr,Ca:Y3Al5O12晶体中四配位四价铬离子激光中心的形成

在以中频感应提拉法生长Cr,Ca:Y3Al5O12晶体的基础上,根据不同Ca/Cr掺杂浓度比的晶体于空气中退火前后的吸收光谱数据,建立了四配位四价Cr激光中心形成的缺陷反应方程,认为Cr3+到Cr4+的价态转变与晶体中带有两个而不是一个正电荷的氧离子空位有关。     

Chloride and Indium‐Chloride‐Complex Inorganic Ligands for Efficient Stabilization of Nanocrystals in Solution and Doping of Nanocrystal Solids

Here, the surface functionalization of CdSe and CdSe/CdS core/shell nanocrystals (NCs) with compact chloride and indium‐chloride‐complex ligands is reported. The ligands provide not only short interparticle distances but additionally control doping and passivation of surface trap states, leading to enhanced electronic coupling in NC‐based arrays. The solids based on these NCs show an excellent electronic transport behavior after heat treatment at the relatively low temperature of 190 °C. Indeed, the indium‐chlorido‐capped 4.5 nm CdSe NC based thin‐film field‐effect transistor reaches a saturation mobility of μ = 4.1 cm² (V s)^?1 accompanied by a low hysteresis, while retaining the typical features of strongly quantum confined semiconductor NCs. The capping with chloride ions preserves the high photoluminescence quantum yield ( ≈ 66%) of CdSe/CdS core/shell NCs even when the CdS shell is relatively thin (six monolayers). The simplicity of the chemical incorporation of chlorine and indium species via solution ligand exchange, the efficient electronic passivation of the NC surface, as well as their high stability as dispersions make these materials especially attractive for wide‐area solution‐processable fabrication of NC‐based devices.     

Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes

A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.     

脉冲激光诱导Zn/InP掺杂过程中温度分布的解析计算

在实验的基础上 ,分析脉冲激光诱导半导体InP掺杂Zn过程 ,利用简化的一维模型 ,在第三类边界条件下 ,给出一种较直观的脉冲激光辐照有限厚双层材料Zn/InP的温度分布解析形式     

p型ZnO薄膜制备的研究进展

ZnO是一种性能优异的"低温蓝光工程"宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。     

凹凸棒土负载CeO2-La2O3复合材料制备表征及催化性能

以凹凸棒土(ATP)为载体, 以Ce(NO₃)₃·6H₂O和La(NO₃)₃·6H₂O为原料, 以C₆H₁₂N₄(HMT)为沉淀剂, 采用均相沉淀法制备了不同铈镧比的CeO₂-La₂O₃/ATP(Ce:La=9:1~3:7, 摩尔比, 下同)复合材料。用TG-DSC、 TEM、 XRD和FTIR对所制备复合材料的微观结构和形貌进行表征, 并分别考察不同铈镧比和H₂O₂添加量对酸性品红模拟废水脱色降解的影响。结果表明, 当Ce:La=5:5时, CeO₂-La₂O₃固溶体颗粒均匀分布在ATP表面, 颗粒尺寸为5~10 nm。随着铈镧摩尔比的增加, 酸性品红的降解率呈先增后减的趋势, 且当Ce:La=5:5、 H₂O₂为10 mL、 酸性品红浓度为100 mg/L时, 降解效果最好, 300 min后的最大降解率达82%。     

一种VLD结构VDMOS终端设计

垂直双扩散金属氧化物场效应晶体管(Vertical Double-diffused Metal-Oxide-Semiconductor Field Effect Transistor,VDMOS)终端设计中,场限环结构被广泛应用,但随着器件耐压的增加,场限环终端在效率、占用面积方面的劣势也越发明显。结合横向变掺杂的原理,在成熟的场限环工艺基础上,只更改深阱杂质注入窗口大小与距离,设计了一种800 V VDMOS终端结构,击穿电压仿真值达到938.5 V,为平行平面结击穿电压的93.29%,有效终端长度仅为137.4 μm。