Overcoming the poor short wavelength spectral response of CdS/CdTe photovoltaic modules via luminescence down‐shifting: ray‐tracing simulations

The short‐wavelength response of cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaic (PV) modules can be improved by the application of a luminescent down‐shifting (LDS) layer to the PV module. The LDS layer contains a mixture of fluorescent organic dyes that are able to absorb short‐wavelength light of λ < 540 nm, for which the PV module exhibited low external quantum efficiency (EQE), and re‐emit it at a longer wavelength (λ > 540 nm), where the solar cell EQE is high. Ray‐tracing simulations indicate that a mixed LDS layer containing three dyes could lead to an increase in the short‐circuit current density from J_sc = 19.8 mA/cm² to J_sc = 22.9 mA/cm² for a CdS/CdTe PV module. This corresponds to an increase in conversion efficiency from 9.6% to 11.2%. This indicates that a relative increase in the performance of a production CdS/CdTe PV module of nearly 17% can be expected via the application of LDS layers, possibly without any making any alterations to the solar cell itself. Copyright © 2006 John Wiley & Sons, Ltd.     

Electrospinning of P3HT-PEO-CdS fibers by solution method and their properties

Homogeneous composite fibers of poly(3-hexylthiophene) (P3HT)-polyethylene oxide (PEO)-Cadmium Sulfide (CdS) were manufactured by electrospinning technique using chloroform as solvent. The incorporation of CdS in the composite fibers was determined by SEM, FTIR and TGA techniques. SEM and confocal microscopy have been used to determine size, surface morphology and distribution of the fluorescence phase in the fibers. A morphology change in P3HT/PEO fibers was caused by the presence of CdS: porous morphology was obtained for low CdS concentration (3.8 wt% and less) and when the content of CdS nanoparticles is higher, they were concentrated at the center of the fibers. The photoluminescence response was modified with CdS inside the P3HT-PEO fibers. By XRD it was determined that the introduction of CdS nanoparticles in the P3HT-PEO fibers caused disorder in P3HT chains. The obtained composite fibers are promising materials for optic and electronic applications.     

On the influence of light on dislocation motion in compound semiconductors

The influence of light on dislocation motion and the associated flow stress is examined for CdS and (Hg_0.3Cd_0.7)Te semiconductors. For CdS, a large increase in flow stress is observed for slip on the basal planes during irradiation. In contrast, (Hg_0.3Cd_0.7)Te exhibits a smaller photoplastic effect with a time delay. Results of experiments on the effect of light, slip direction, strain rate, and temperature are presented with emphasis on CdS. Possible mechanisms of photoplasticity, along with methods of exploiting the photoplastic effect to reduce dislocation densities in semiconductor devices, are also discussed.     

Pt/CdS Schottky势垒紫外探测器的研制

介绍了Pt/CdS金属半导体接触Schottky势垒形成及In/CdS的欧姆接触工艺研究,由此制成了紫外探测器.测试了探测器的Ⅰ-Ⅴ特性,零偏下的光谱响应和器件的频率响应.观察了器件的反偏响应情况.获得的探测器在λ=440am处加两伏反偏时的响应率为0.17A/W,内量子效率最大可达64%.     

Efficient Visible-to-UV Photon Upconversion Systems Based on CdS Nanocrystals Modified with Triplet Energy Mediators

Developing high-performance visible-to-UV photon upconversion systems based on triplet–triplet annihilation photon upconversion (TTA-UC) is highly desired, as it provides a potential approach for UV light-induced photosynthesis and photocatalysis. However, the quantum yield and spectral range of visible-to-UV TTA-UC based on nanocrystals (NCs) are still far from satisfactory. Here, three different sized CdS NCs are systematically investigated with triplet energy transfer to four mediators and four annihilators, thus substantially expanding the available materials for visible-to-UV TTA-UC. By improving the quality of CdS NCs, introducing the mediator via a direct mixing fashion, and matching the energy levels, a high TTA-UC quantum yield of 10.4% (out of a 50% maximum) is achieved in one case, which represents a record performance in TTA-UC based on NCs without doping. In another case, TTA-UC photons approaching 4 eV are observed, which is on par with the highest energies observed in optimized organic systems. Importantly, the in-depth investigation reveals that the direct mixing approach to introduce the mediator is a key factor that leads to close to unity efficiencies of triplet energy transfer, which ultimately governs the performance of NC-based TTA-UC systems. These findings provide guidelines for the design of high-performance TTA-UC systems toward solar energy harvesting.     

用化学热解沉积法制备硫化镉薄膜的微结构

在载玻片或ITO涂覆的玻璃上采用化学热解法沉积CdS固体薄膜,沉积温度在350-540℃之间,部分制备的CdS薄膜进行200-600℃的退火热处理,由SEM,AFMT和XRD分析测量退火热处理前后的CdS薄膜的微观结构,结果表明,沉积温度低于540℃以下制备的CdS薄膜具有类六方结构相当于540℃沉积的CdS薄膜的晶料尺寸依赖于沉积温度及不同基体的情况也在本文中进行了讨论。     

CdS 纳米粒子掺杂的液晶显示器件的低开启电压和频率调制特性

降低能耗对于液晶显示器件,尤其是移动显示尤为重要.在本研究中,3 nm 和 5 nm 两种不同尺寸的 CAS 纳米粒子被用来掺杂入 5CB 液晶材料.掺杂浓度分别为 0.1 wt%和 0.2 wt%.掺杂所得到的液晶显示器件的开启电压由于纳米粒子的影响而被降低,最多可达到25%.并且,相比于前期报道的金属纳米粒子掺杂的液晶显示器件,CdS 纳米粒子显示出稍弱的频率调制特性.     

Spatially Separated CdS Shells Exposed with Reduction Surfaces for Enhancing Photocatalytic Hydrogen Evolution

To the photocatalytic H₂ evolution, the exposure of a reduction surface over a catalyst plays an important role for the reduction of hydrogen protons. Here, this study demonstrates the design of a noble‐metal‐free spatially separated photocatalytic system exposed with reduction surfaces (MnO_x @CdS/CoP) for highly solar‐light‐driven H₂ evolution activity. CoP and MnO_x nanoparticles are employed as the electron and hole collectors, which are selectively anchored on the outer and inner surface of CdS shells, respectively. Under solar light irradiation, the photogenerated holes and electrons can directionally move to the MnO_x and CoP, respectively, leading to the exposure of a reduction surface. As a result, the H₂ evolution increases from 32.0 to 238.4 µmol h^?1, which is even higher than the activity of platinum‐loaded photocatalyst (MnO_x @CdS/Pt). Compared to the pure CdS with serious photocorrosion, the MnO_x @CdS/CoP maintains a changeless activity for the H₂ evolution and rhodamine B degradation, even after four cycles. The research provides a new strategy for the preparation of spatially separated photocatalysts with a selective reduction surface.     

Band gap tailoring and yellow band emission of Cd0.9−xMnxZn0.1S (x=0 to 0.05) nanoparticles: Influence of Mn concentration

Cd_0.9-xMn_xZn_0.1S nanoparticles with x=0 to 0.05 were prepared by a simple chemical co-precipitation method at room temperature. Crystal structure and optical properties of the synthesized nanoparticles have been analyzed by X-ray diffraction (XRD) and UV–visible spectrophotometer. XRD confirmed the phase singularity of the synthesized material, which also confirmed the formation of Cd–Mn–Zn–S solid solution rather than secondary phase formation. Energy dispersive X-ray spectra showed the presence of Cd, Zn, Mn and S in the synthesized samples. The observed higher absorbance and lower transmittance of Mn-doped Cd_0.9Zn_0.1S than Cd_0.9Zn_0.1S is due to the size effect and also the defect states induced by Mn. The decrease in energy gap at Mn=0.01 is due the ‘sp–d’ exchange interactions between band electrons in CdS and the localized ‘d’ electrons of the Mn²⁺ ions. The increase in energy gap after Mn=0.01 can be explained by the excessive carriers generated by the impurity atoms. Fourier transform infrared spectroscopy (FTIR) illustrated the vibration modes of Cd–Zn–Mn–S between the wave number 530 cm⁻¹ and 780 cm⁻¹. Mn=0.01 doped sample exhibits a relatively high PL intensity and covers most of the visible region than the other samples; so desirable for LED application. The intensity ratio of the green band (GB) to Mn-related yellow band (YB) is decreased after Mn=0.01 which may be due the size effect or reduction of surface defect at higher doping concentrations.     

Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se2 solar cells

The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu₂ZnSnSe₄ (CZTSe) thin‐film solar cells, by using a Cd²⁺ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se₂ (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7 min at 70 °C using a basic solution of cadmium acetate. X‐ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density–voltage (J–V), external quantum efficiency, and drive‐level capacitance profiling measurements. For the CZTSe‐based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency (η) from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R_S) of the dark and light J–V, as determined using the one‐diode model. The crossover effect between dark and light J–V curves is also significantly reduced by Cd PE treatment. Copyright © 2015 John Wiley & Sons, Ltd.