Anodising potential influence on well-ordered nanostructures formed by anodisation of aluminium in sulphuric acid

High-density structures with relatively well-ordered nanopore arrays have been obtained by the self-ordering growth of nanopores occurring during anodisation of aluminium in sulphuric acid. The resulting array of well-ordered nanopores strongly depends on an applied voltage of anodising, temperature and a procedure of synthesis. Regular arranged hexagonal arrays on aluminium with a relatively uniform pore diameter, interpore distance, and depth of pores exceeding 90 μm, can be formed by the self-ordering two-step anodising at 1 °C. The interpore distance and the pore diameter were evaluated on anodised aluminium layers obtained at different cell potentials ranging from 15 to 25 V. The detailed analyses of their uniformity were performed from SEM images. The analysis of a pore arrangement defects was made from SEM top view images taken on samples anodised at various cell potentials. The defect maps, known as Delaunay triangulations, of the arrangement of about 1000 pores were constructed for different applied anodising potentials. The percentage of pores that are not six-fold coordinated by the neighbouring pores indicates the percentage of defected surface.     

锂离子电池正极材料锂锰氧化物的固相合成研究进展

阐述了固相合成反应的原理，综述了锂锰氧化物的几种固相合成方法，并着重介绍了熔融渍法，多步加热法，机械化学法和微波化学法等在锂锰氧化物合成中的研究进展。     

3#大布袋收尘器更新改造方案的探讨

通过对3^#大布袋收尘器更新改造方案的对比分析，探讨适合工艺条件的最佳收尘器的选择途径。     

Hybrid gas-to-particle conversion and chemical vapor deposition for the production of porous alumina films

Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m² g⁻¹, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method.     

Oxidation of porous nanocrystalline titanium nitride. II. Scale structure and composition

We have used x-ray phase analysis to study the composition of the products of reaction between oxygen and nanocrystalline powders with particle sizes 15, 40, 55, and 80 nm, and also specimens pressed (and sintered) from them. The powders were oxidized in air at 100°C (400 h) to 500°C (5 min), while the sintered specimens were oxidized at 600–900°C for 15, 120, and 240 min. In all cases, in the initial oxidation step the oxynitride Ti(O_xN_y) is formed, which over time is oxidized to TiO, Ti₂O₃, Ti₃O₅, TiO₂ (anatase) and TiO₂ (rutile). In the range 600–800°C, formation of a continuous oxide layer and conversion of anatase to rutile slows down diffusion of oxygen in the scale. We have established that at 900°C, the growth rate of the scale thickness increases and so the reflections from the oxynitride are barely noticeable on the diffraction patterns taken from the surface of the oxidized specimen. In these diffraction patterns, along with strong reflections from the rutile, we also observed weak reflections from lower oxides and anatase, which may be due to reaction between oxygen and the titanium ions diffused to the scale surface. We have concluded that at T > 850°C, the mechanism for oxidation of TiN changes. This is due to superposition of counterdiffusion of titanium ions on the diffusion of oxygen. __________ Translated from Poroshkovaya Metallurgiya, Nos. 3–4(448), pp. 72–78, March–April, 2006.     

Electrical and optical properties of fluorine-doped CdO films deposited by ultrasonic spray pyrolysis

The CdO:F samples have been deposited onto microscope glass substrates at 250 °C by ultrasonic spray pyrolysis method. With the incorporation of fluorine into CdO, the direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The shift in the absorption edge is explained by means of the Moss–Burstein effect, which is also supported with the results of the current–voltage characteristics. Here, a correlation has been established between the band broadening and the increase in conductivity due to the increase in carrier density.     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

The flame retardant mechanism of polyolefins modified with chalk and silicone elastomer

This paper presents the current understanding of the flame retardant mechanism of Casico?. The study includes the flame retardant effect of each individual component: ethylene–acrylate copolymer, chalk and silicone elastomer, as well as the formation of an intumescent structure during heating. The flame retardant properties were investigated by cone calorimetry and oxygen index tests. To obtain insight into the flame retardant mechanism, heat treatment under different conditions has also been performed. The results indicate that the flame retardant mechanism of Casico is complex and is related to a number of reactions, e.g. ester pyrolysis of acrylate groups, formation of carbon dioxide by reaction between carboxylic acid and chalk, ionomer formation and formation of an intumescent structure stabilized by a protecting char. Special emphasis is given to the formation of the intumescent structure and its molecular structure as evaluated from ¹³C MAS‐NMR and ²⁹Si MAS‐NMR, ESCA and XRD analysis. After treatment at 500°C the intumescent structure consists mainly of silicon oxides and calcium carbonate and after treatment at 1000°C the intumescent structure consists of calcium silicate, calcium oxide and calcium hydroxide. Copyright © 2003 John Wiley & Sons, Ltd.     

UV法测定聚甲基丙烯酸酯纳米粒中胰岛素的包封率

建立一种简便易行的测定聚甲基丙烯酸酯胰岛素纳米粒中游离胰岛素含量方法.用Nanosep OD100C33超滤膜分离纳米粒和游离药物,在276 nm处测定药物的吸光度,建立胰岛素含量测定方法,并对线性、回收率、精密度等指标进行考察,最后测定各种胰岛素和载体比例混合的纳米粒的包封率.结果发现,该超滤膜能较好地分离纳米粒和游离的药物,在0.11～1.10 u/mL范围内,药物在276 nm的吸光度和浓度存在良好的线性关系(r=0.999 8),线性方程为A=0.868 8C-0.001 6,高、中、低3种浓度的回收率和精密度良好.该方法操作简单、结果可靠,可用于胰岛素纳米粒中药物包封率的测定.     

Rutile-type TiO2 thin film for high-k gate insulator

We investigated rutile-type titanium dioxide (TiO₂) films for possible use as a high-k gate insulator. The TiO₂ thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO₂ whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO₂ layer between the TiO₂ and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO₂ grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO₂/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO₂ layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO₂ and to decrease the leakage.