Microstructure and texture analysis of narrow copper line versus widths and annealing for reliability improvement

In this article, we focus on the possible influence of interconnect Cu microstructure on electromigration phenomenon. First three annealing conditions were applied on interconnects. Microstructure and texture of copper were characterized by Electron BackScattered Diffraction (EBSD). Then electromigration tests have been carried out on 70 and 150 nm line widths of 45 nm node technology. In both cases no significant difference was observed in term of reliability performance versus annealing conditions. On the contrary large difference is observed on Electron BackScattered Diffraction results. Then, a statistical approach was used to investigate local microstructure and texture of copper for 150 nm line width. The results underline that morphological parameters of copper can vary versus annealing conditions but lead to similar reliability performances. We can thus conclude that these parameters are not in relationship with electromigration phenomena in these interconnects. On the other hand, high amount of misorientation has been highlighted as responsible of early failures.     

聚四氟乙烯覆铜板的制造技术及其发展趋势

介绍了PTFE覆铜板的制造技术,综述总结了其最新的技术发展趋势。     

一种厚铜刚挠结合印制板渗胶改善

厚铜刚挠结合板的生产中一般采用普通流胶半固化片制作,在满足厚铜填胶的同时也导致窗口渗胶的问题越发突出,严重影响弯折性能,本研究选取一款应用于电源模块的105μm厚铜刚挠结合板,结合半固化片类型、压合参数、保护胶带类型、窗口设计等,极大程度的克服了窗口渗胶问题.     

未来PCB市场的新变化

文章以世界IC市场发展前景为“参照物”,研究、讨论PCB未来市场发展的趋势,以及重点阐述了未来PCB新的巨大市场——数字家电产品的形成问题。     

印制电子用纳米油墨开发现状和课题

概述了Ag纳米油墨,Cu纳米油墨和合金纳米油墨等印制电子用油墨的开发现状和课题以及利用ITO纳米油墨的透明导电膜形成。     

电镀铜粒影响因素探究

随着客户需求的不断变化和对PCB产品外观越来越高的要求,我公司客户对产品外观的要求更为严格,使得我们迫切需要对于过程中影响PCB板件外观的主要因素进行控制。本文主要从电镀铜粒着手,简述铜粒产生的影响因素,并提出可行性建议,给整个铜粒状况改善提供思路和方向。     

微晶磷铜阳极在高端PCB制造中的应用

介绍PCB制造过程中使用的酸性硫酸盐镀铜阳极的特点;普通磷铜阳极、微晶磷铜阳极材料的组织结构和电化学极化情况;以及微晶磷铜阳极在高端PCB制造中的优点和应用。     

氯化铵溶液中还原浸出海洋锰结核

采用亚硫酸钠作还原剂对氯化铵溶液中海洋锰结核的浸出行为进行研究，探讨Ｎａ２ＳＯ３加入量、ＮＨ４Ｃｌ浓度及初始ｐＨ值、浸出温度和时间等对锰结核中铜、镍、钴、锰、铁浸出率的影响。结果表明５．０ｍｏｌ／ＬＮＨ４Ｃｌ溶液中，初始ｐＨ值约５．０及８０℃、１８０ｍｉｎ，锰结核与Ｎａ２ＳＯ３等量加入时，铜、镍、钴、锰的浸出率分别为８８．５６％、９６．１４％、７８．５７％、３５．２％，铁几乎未被浸出。而在同样的条件下，控制浸出过程的ｐＨ值４．０左右，１２０ｍｉｎ后铜、镍、钴、锰、铁的浸出率分别为９０．２１％、９８．８０％、９１．４３％、９８．１１％、２０．１３％。     

一种用于导电油墨的特种铜粉制备研究

特种导电油墨是全印制电路技术开发与应用的关键之一。本文报道了利用硫酸铜、碳酸钠、抗坏血酸等为原料,通过固相反应获得纳米非球形铜粉方法。通过SEM、EDS分析表明,获得的产物为一种柱状的高纯铜粉,直径大约500nm,可以作为全印制电路技术用高性能特种油墨的开发。     

Electrochemical aspects of new materials and technologies in microelectronics

Major scaling issues, which need to be addressed to continue scaling according to Moore’s law, include increase of transistor leakage due to use of thin gate oxide (about 1 nm limit for SiO₂), power (reaching 100 W/cm²) and RC delay (dielectric constant limit is 1 for air and Cu resistivity increases with scaling down the feature sizes). Integration of new materials and technologies will allow us to continue scaling and improve device performance. Examples of new materials include high-k dielectrics and strained silicon in the frond end of wafer processing, low-k carbon-doped oxide and electroplated copper in the back end of wafer processing as well as electroplated bumps, high thermal conductivity interface, heat sink and heat spreader materials in packaging. Electrochemical technologies will play an increasingly important role in silicon technology due to low cost, use of self-assembly processing and self-aligned growth ability. New electrochemical technologies in silicon processing include copper electroplating (replaced Al interconnect to reduce RC delay and increase reliability), bump electroplating (replaced wire bonding to allow increased I/O and improve reliability), and porous silicon for silicon on isolator fabrication (to reduce transistor leakage). Copper electroplating allows a low R, an excellent gap fill capability and superior materials properties with (111) textured Cu films and large grain size, and a stable and controlled process.