LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

Ti-2.5Cu在293和77K下的力学性能和变形机制

Ti-2.5Cu合金经过固溶-时效处理后,纳米级Ti2Cu颗粒呈均匀分布,合金具有良好的综合力学性能.温度从293 K降到77 K时,合金的强度和塑性随着温度的降低而增加,77 K下低周疲劳寿命比293 K下的高.微观组织的分析表明,Ti2Cu颗粒对位错运动有阻碍作用,而对孪生切变影响较小.在293和77 K下循环变形后观察到孪晶,低温下孪晶数量增多并相互交叉.表明孪生和滑移在293和77 K下的循环变形中同时起作用.Ti-2.5Cu合金在77 K下较高的塑性和低周疲劳寿命可以用孪生诱发塑性予以解释.     

Mg_(0.15)Zn_(0.85)O:Tb合金薄膜的阴极射线发光性质研究

采用溶胶凝胶方法成功地制备了掺杂稀土铽离子的 Zn O和 Mg0 .1 5Zn0 .85薄膜。通过对 X射线衍射结果的分析表明 ,稀土离子替代了 Zn2 +的格位 ,进入了半导体基质的晶格中。从阴极射线发光结果可以发现 ,在Mg0 .1 5Zn0 .85O基质中 ,可以观察到来源于稀土铽离子各能级的发射 ,而 Zn O:Tb的薄膜只能观察到较强的铽离子 5D4 — 7F5能级的跃迁。这可能是由于 Mg0 .1 5Zn0 .85O基质的能隙 (3 .65 e V)比 Zn O更宽 (3 .3 e V) ,其对铽离子的能量传递更有效的缘故。     

Study on Luminescence Properties of High-Density Phosphors BiTaO4：Pr^3＋ and BiTaO4

The photoluminescence properties of BiTaO4:Pr^3 and BiTaO4 at room temperature were studied, and the infrared transmission and diffusion reflection spectra of BiTaO4 were measured. The photoluminescence spectrum of BiTaO4 peaks at about 420, 440 and 465nm. There has an obvious excitation band from 330 to 370nm. The photoluminescence spectrum of BiTaO4:Pr^3 consists of the characteristic emission of Pr^3 , and its main peak is at 606 nm from ^3P0→^3H6 transition of Pr^3 . Its excitation spectrum consists of the wide band with maximum at 325nm, the wide band in the range of 375-430nm, and the characteristic excitation of Pr^3 .The bands at 325nm and 375-430nm may be from the absorption of the charge transfer transition of the tantalate group and defect energy levels in its forbidden band, respectively.There is energy transfer from host to Pr^3 . Because both the host density and photoluminescence peak intensity of BiTaO4:Pr^3 are superior to PbWO4, BiTaO4:Pr^3 may be a potential heavy scintillator.     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

Preparation and Properties of Sintering Additives Coated Si3N4 from Heterogeneous Nucleation Processing

The sintering additives such as Al2O3 and /or Y2O3 were coated on the surfaces of Si3N4 particles via heterogeneous nucleation processing using a buffered pH solution as the precipitation reagent .They nucleated and grew only on the surfaces of Si3N4 and did not form sol particles in solution by TEM observation .The isoelectric point(IEP) of coated Si3N4 was different from that of as-received Si3N4.The IEP of Al(OH)3-coated Si3N4 occurred at pH8.4, which is close to that of alumina .When Al(OH)3-coated Si3N4 particles were coated with Y(OH)3,the IEP of coated Si3N4 powder shifted from pH8.4 to pH9.2 ,similar to that of yttria.In addition ,the rheological data showed that Al2O3 and /or Y2O3 coated Si3N4 suspension is nearly Newtonian and that added Si3N4 suspension shows a shear rate thinning behavior.     

Mg-Si基热电化合物的研究现状

重点综述了Mg-Si基热电化合物的基本特性，该体系热电材料的制备方法与掺杂改性的研究进展，并提出了要重点解决的问题。     

工业还原NS—掺杂蓝钨过程中掺杂剂相的形成和结合

本文叙述了用于生产具有不下垂性能的细钨丝的ＮＳ－掺杂蓝钨工业还原过程中掺杂剂相的形成和结合。在还原过程中结合适量的掺杂剂是钾残留在烧结锭中的基本保证，钾能在丝材制造中形成钾泡串，使在随后的的灯丝工作时形成大晶联锁微结构，而这是不下垂特性的关键所在。本文的第一部分讨论了金属钨粉的工业生产方法。虽然掺杂Ｋ、Ａｌ、Ｓｉ的钨粉的生产方法与末掺杂的钨粉的生产方法基本相同，但仍有一些特别的区别要介绍。本文分析