High performance Langmuir–Schaeffer film transistors based on air stable n-type diperylene bisimide

Diperylene Bisimide (DIPP–diPBI) mono- and/or multi-layer film using Langmuir–Schaeffer (LS) techniques has been fabricated and the OFET device performance based on the as-prepared LS film is investigated. The thickness of monolayer film is determined to be 2.3 nm by using atomic force microscopy, which is closely matched with the interplanar spacing estimated from the XRD spectra. The length of molecular long axis is measured to be 21.9 Å from the DFT optimized configuration, indicating that the long axis of molecule in LS film approximately stands upright on hydrophobic substrates. The absorption maximum at 417 nm shows a good linear corrleation with the layer number, proving the obtained films are deposited in a layer-by-layer fassion. The film with precision control of the long-range order and lateral packing density by LS deposition exhibits good electron injection properties and high FET device performance. The charge transport behavior is also investigated as a function of the layer number of LS film. The electron mobility gradually increases with the number of layers and saturates at a plateau with a mean value of 0.03 cm² V⁻¹ s⁻¹ in the atmosphere upon completion of the first eight layers. It is a direct evidence of physical size of charge transport layer. Furthermore, the fabricated FET device exhibits long-time stability in the air. The integration of LS method with air stability of the n-type compound affords an opportunity to explore solution-phase self-assembly and electronic devices fabrication with controllable molecular layers.     

Through silicon via: From the CMOS imager sensor wafer level package to the 3D integration

A wide range of requests coming from customer appears to demonstrate the feasibility of the TSV for a large range of via size and via AR either for process point of view or for performances point of view. The main application in the market is the CMOS image sensor with the integration of via at AR1. Now based on this first wafer level package of CMOS Image Sensor (CIS), the integration on the z axe will continue by the wafer lens integration for a continuous form factor and low cost module.First 3Di applications with TSV is entering the market with the via-last approach, more simply to be developed in semiconductor manufacturing in order to secure the 3Di technologies and to promote the 3Di to customers. Then specific design and electrical models will be developed and optimized allowing a fast and prosperous development of the via-first approach.A challenge in the modelisation of the TSV is the understanding of the mechanical impact of the trench and the metal filling on the behavior of the CMOS components and the reliability. These types of researches are progressing in various institutes and are essential for an increasing integration of TSV.Because actually, the technology continues to drive the 3D roadmap, the mechanical and thermal modelisation and 3D design tool need to be more activated to be developed faster in order to optimize the 3D module. Then the electrical testing will be a real challenge to be able to distinguish drift in the right strata, to be able to isolate a via within more than 10000 via in a module. The electrical testing will be strictly linked to mechanical and electrical failure analysis to get feed-back in technology, actual drawback of the 3D development.The cost of the 3Di and the TSV integration is more and more important and looks as a primary driver even if the functionalities increase faster than cost! Some steps have been already identified to be more costly steps: bonding and via filling. Indeed, throughput and material used have a direct impact on the final price.Continuous perspectives of TSV integration are progressing in order to optimise actual applications or to develop new integration. First challenging integration is the interposers with 3D interconnection allowing devices mounting on both side, like passive device integration or building of micro-cooling channels. The main interest of the 3D silicon interposer is the fact that it can connect chips at different locations and sizes, as example memory over digital IC. The usage of silicon as an interposer leads to an increase in the cost, but it will boost performances and reduce power consumption. One other advantage of the introduction of 3D interposer is the simplification of the required substrate implying a better mismatch of CTE lowering the packaging failure.In the wafer level package, TSV is now introduced to reduce the package footprint and mainly simplify the capping of device, similar to that for the MEMS. Indeed by integrating TSV, the capping must only protect the device against external environment, and not also take into account the electrical path in the bond layer degrading the hermiticity performance.To finish this paper, the sentence of Yann Guillou is the right situation: “The (3D) roadmaps need to be based on application requirements and not driven by technology ONLY. 3D Integration with TSV is not a scaling based concept Does it make sense today to think about submicron via diameter or dice thinner than 30 μm for example?” Applications need to take a risk by using 3D TSV technology!     

公共空间的嵌入与空间模式的翻转——上海“新天地”的规划评论

通过对上海"新天地"空间模式的深入分析,揭示了"新天地"在城市再开发过程中避免采用全面拆旧建新和原汁原味保护的方式而采用"第三条道路"的方式在上海特定的社会经济条件下取得成功的特征及其深层次原因,并指出了其所采用的嵌入式空间策略所造成的对地区公共空间组织模式的整体性改变,这种改变全面颠覆了原有的公共空间模式并深刻地影响了与周边地区的相互关系。     

Di-Hydroxylated Soybean Oil Polyols with Varied Hydroxyl Values and Their Influence on UV-Curable Pressure-Sensitive Adhesives

Di-hydroxylated soybean oil (DSO) polyols with three different hydroxyl values (OHV) of 160, 240, and 285 mg KOH/g were synthesized from epoxidized soybean oils (ESO) by oxirane cleavage with water catalyzed by perchloric acid. The DSO were clear, viscous liquids at room temperature. The structure and physical properties of DSO were characterized using titration methods, Fourier-transform infrared spectroscopy (FTIR), gel permeation chromatography, rheometer, differential scanning calorimetry, and thermogravimetric analysis. The number average molecular weight of DSO160, DSO240, and DSO285 were 1,412, 1,781, and 1,899 g/mol, respectively, indicating that oligomerization occurred during DSO synthesis, which was further confirmed by FTIR. All DSO polyols exhibited non-Newtonian, shear thinning behavior. DSO with higher OHV were more viscous than those with lower OHV. All DSO were thermally stable up to 380 °C. These three DSO were formulated into pressure-sensitive adhesives (PSA) by copolymerizing with ESO using UV curing. The peel adhesion strength of the PSA was significantly affected by the OHV of DSO and DSO content. Maximal PSA adhesion strength of 4.6 N/inch was obtained with DSO285 and a DSO/ESO weight ratio of 0.75.     

Removal of Nickel from Electroless Nickel Plating Rinse Water with Di(2‐Ethylhexyl)phosphoric Acid‐Impregnated Supports

Abstract

Electroless nickel plating technology is playing an increasingly important and indispensable role in many fields such as the electronic and automobile industries. As a result, the treatment of the rinse water containing about 50 mg/dm³ of nickel is becoming a serious environmental problem. Although this water is currently treated by the conventional precipitation method, a method without sludge generation is highly desired. This study explores the possibility of removing and recovering nickel from the rinse water with di(2‐ethylhexyl)phosphoric acid‐impregnated supports (D2EHPA‐IS). Macroporous polymer and oil adsorbents made of synthetic and natural fibers as the supporting materials were tested for the nickel removal abilities from simulated rinse water. In the batch experiments, more than 90% of the nickel can be adsorbed by these D2EHPA‐IS without pH adjustment. The adsorption of nickel reaches the equilibrium within 1.2 ks at 298K at a shaking rate of 140 rpm. The pH‐dependency of the nickel adsorption by the D2EHPA‐IS shows that the nickel is adsorbed by a cation exchange reaction. The adsorbed nickel can then be readily eluted with mineral acids. Most of the IS can be used many times without losing their adsorption abilities. In the column experiments, the breakthrough curves of nickel for these supports indicate that the nickel–D2EHPA complex formed at the high nickel loading region tends to dissolve into the aqueous phase. These findings lead to the conclusion that most of the studied D2EHPA‐IS are effective for the removal and recovery of nickel from an electroless nickel plating rinse water in batch mode.     

聚氨酯防水涂料预聚体的快速合成

描述了聚氨酯防水涂料预聚体的快速合成生产工艺 ,讨论了复合催化剂、pH值、溶剂对预聚体质量的影响。该工艺具有生产反应时间短、工艺简单、操作方便、成本低和游离—NCO含量低等优点。     

固体杂多酸盐TiGeW12O40/TiO2催化合成DIOP

采用固体杂多酸盐催化剂TiGeW12O40／TiO2代替浓硫酸催化合成了邻苯二甲酸二异辛酯(DIOP)。考察了原料配比、酯化时间、催化剂用量及催化剂回收等对反应的影响。结果表明：选用TiGeW12O40／TiO2做催化剂具有催化活性高、副产物少、不污染环境等优点；合成DIOP的适宜工艺条件为反应温度130℃，反应时间2h，n(醇)／n(酸酐)为2．75／1，催化剂质量分数为1．00％；按此工艺条件反应，酯化率可达94．6％。     

Migration of di‐(2‐ethylhexyl)adipate (DEHA) and acetyl tributyl citrate (ATBC) plasticizers from PVC film into the food stimulant of isooctane

Chemical migration from food packing is influenced by several factors such as nature of chemicals, complexity of food, temperature, packing material used and properties of the migrating substances. Chemical compounds that are incorporated within polymeric packaging materials may interact with food components during processing or storage and migrate into the food by jeopardizing the food safety. This migration is higher if food remains in contact with packing material for extended time. Polyvinyl chloride (PVC) film such as di‐(2‐ethylhexyl) adipate (DEHA) and acetyl tributyl citrate (ATBC) are still widely used as a food packing material due to its flexibility, transparency and low water permeability. The present study covers the main migration phenomena of both plasticizers (di‐(2‐ethylhexyl) adipate (DEHA) and acetyl tributyl citrate (ATBC)) from PVC‐film into isooctane food stimulant using a direct gas chromatographic method. An exposure period of 48 h at 30 °C and 4 °C was used. The obtained results showed DEHA levels ranging of 7.2 mg/dm² while, no ATBC migration from PVC‐film was observed. Results are discussed in relation to EU legislation proposed upper limit for DEHA specific migration (18 mg/L or 3 mg/dm²) and overall migration limit (OM) of 10 mg/dm².     

旋流分离器的分离性能X_(50)的一种数学模型

通过对旋流器基本分离性能进行研究,建立一种定性模型,并通过试验,确定相关系数,研究操作参数和结构参数与分离性能间的关系,建立分离性能X的数学模型。     

"天地人三才之道"在风景园林建设实践中的指导作用探解——基于"天地人三才之道"的风景园林设计论研究(一)

"天地人三才之道(简称‘三才之道')"是我国传统文化的重要组成部分之一.首先对"三才之道"进行了溯源和新解,在此基础上,先后探讨了在景观类型划分、人居环境形成过程、传统同林形成过程中"三才之道"的应用,并从"三才之道"的视点出发总结了风景园林的特征,最后提出了"基于天、地、人的风景园林设计论(或者设计结合天、地、人)"的学术观点.