Nanoscale Characterization of Energy Generation from Piezoelectric Thin Films

We report on the use of nanoindentation to characterize in situ the voltage and current generation of piezoelectric thin films. This work presents the controlled observation of nanoscale piezoelectric voltage and current generation, allowing accurate quantification and mapping of force function variations. We characterize both continuous thin films and lithographically patterned nano­islands with constrained interaction area. The influence of size on energy generation parameters is reported, demonstrating that nanoislands can exhibit more effective current generation than continuous films. This quantitative finding suggests that further research into the impact of nanoscale patterning of piezoelectric thin films may yield an improved materials platform for integrated microscale energy scavenging systems.     

Magnetic Field‐Enhanced Thermoelectric Performance in Dirac Semimetal Cd3As2 Crystals with Different Carrier Concentrations

The magneto‐thermoelectric figure of merit (ZT) in crystals of the topological Dirac semimetal Cd₃As₂ with different carrier concentrations is studied. The ZTs for all the crystals increase with the temperature and show maxima at high temperatures. Meanwhile, the temperatures corresponding to the ZT maxima increase with the carrier concentration. The limit to the improvement in ZT(T) at high temperature could be related to the unusual large enhancement in thermal conductivity at elevated temperatures. The bipolar effect and Dirac liquid behavior are presented as processes possibly responsible for the peculiar behavior of the thermal conductivity. Applying a transverse magnetic field initially leads to a dramatic enhancement and, subsequently, to a slight reduction in ZT for all the crystals. The maximum ZT achieved in a magnetic field increases with the carrier concentration and reaches 1.24 at 450 K in a magnetic field of 9 T for the crystal with the highest carrier concentration. It is expected that this work will be beneficial to the current interests in optimizing the thermoelectric properties of quantum topological materials.     

A surface potential based drain current model for asymmetric double gate MOSFETs

In this paper, we present a generic surface potential based current voltage (I-V) model for doped or undoped asymmetric double gate (DG) MOSFET. The model is derived from the 1-D Poisson’s equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton-Raphson iterative method. A noncharge sheet based drain current model based on the Pao-Sah’s double integral method is formulated in terms of front and back gate surface potentials at the source and drain end. The model is able to clearly show the dependence of the front and back surface potential and the drain current on the terminal voltages, gate oxide thicknesses, channel doping concentrations and the Silicon body thickness and a good agreement is observed with the 2-D numerical simulation results.     

Electromodulation and magnetomodulation of exciton dissociation in electron donor (starburst amine) : electron acceptor (bathocuproine) system

Electric field dependencies of electromodulated photoluminescence and photocurrents as well as the magnetic field effects on photocurrents, photovoltaic characteristics, electromodulated photoluminescence and photoluminescence have been investigated in vacuum evaporated films of m-MTDATA:BCP (4,4′,4″-tris(N-(3-methylphenyl)-N-phenylamino)triphenylamine and bathocuproine) system. The electromodulation processes do remain in accordance with Onsager as well as with the Sano–Tachiya–Noolandi–Hong formalisms of electron–hole pair separation. While the electromodulated photocurrents are due to operation of both long-radius and short-radius e–h pairs, the electromodulated photoluminescence quenching is related to merely short-radius fraction of the e–h pairs involved in the exciplex creation process. The photocurrents, photovoltaic characteristics, photoluminescence and electromodulated photoluminescence are influenced by external magnetic field of the hyperfine coupling (HFC) scale which modulates the singlet–triplet intersystem crossing of long-radius e–h pairs.     

CDMA时变色散信道的两级盲辨识算法

本文通过对时变信道的扩展函数在时频域进行正则采样，得到了CDMA时变系统的离散正则模型。针对该模型提出了一种具有较低运算量的两级盲辨识算法。为避免两级算法产生的误差传播效应，文章将理想SIMO模型等效为加性噪声模型来处理。与基展开模型方法相比，该算法具有不需利用观测数据的高阶统计量估计展开基频率的优点。文章通过仿真验证了该算法是可行的。     

Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO3 Multiferroic Films

Domain switching pathways fundamentally control performance in ferroelectric thin film devices. In epitaxial bismuth ferrite (BiFeO₃) films, the domain morphology is known to influence the multiferroic orders. While both striped and mosaic domains have been observed, the origins of the latter have remained unclear. Here, it is shown that domain morphology is defined by the strain profile across the film–substrate interface. In samples with mosaic domains, X‐ray diffraction analysis reveals strong strain gradients, while geometric phase analysis using scanning transmission electron microscopy finds that within 5 nm of the film–substrate interface, the out‐of‐plane strain shows an anomalous dip while the in‐plane strain is constant. Conversely, if uniform strain is maintained across the interface with zero strain gradient, striped domains are formed. Critically, an ex situ thermal treatment, which eliminates the interfacial strain gradient, converts the domains from mosaic to striped. The antiferromagnetic state of the BiFeO₃ is also influenced by the domain structure, whereby the mosaic domains disrupt the long‐range spin cycloid. This work demonstrates that atomic scale tuning of interfacial strain gradients is a powerful route to manipulate the global multiferroic orders in epitaxial films.     

Turkish validation of the Game Transfer Phenomena Scale (GTPS): Measuring altered perceptions,automatic mental processes and actions and behaviours associated with playing video games

Studies on Game Transfer Phenomena (GTP) have demonstrated that experiencing altered sensorial perceptions, automatic thoughts and behaviours after playing video games are relatively common phenomena. The aim of this paper is twofold: (i) to validate the Turkish version of the GTP scale (GTPS), and (ii) to examine the prevalence and the relation between the various dimensions of GTP (e.g., visual perceptions, thoughts, behaviours) and video game players’ individual characteristics (e.g., demographics, gaming habits). A total of 954 frequent players were recruited online. Independently of the different samples used in the original validation of the GTPS and the current study, the findings obtained via confirmatory factor analysis showed that the GTPS-Turkish is reliable and valid and proved to be adequate for measuring GTP. A total of 99% of the players in the sample had experienced some type of GTP. Moreover, the correlational, univariate and multivariate analyses showed associations between various video game player characteristics and GTP. The most remarkable finding was that the prevalence of GTP was higher among minors than adults.     

高强度电磁脉冲对光纤的影响及防护措施

光缆在高强度电磁脉冲的作用下,会引起光纤传输特性的变化,导致模间色散的增加和信号的失真。主要论述了光缆在高强度电磁脉冲影响下的非线性效应,并提出了有效的防护措施。     

垂直偏振态He-Ne激光自混合干涉的实验研究

从实验上研究了频率分裂激光器中偏振态相互垂直的o光和e光的自混合干涉现象,因为o光和e光之间的模竞争效应,所以在o光和e光的反馈曲线中,最大值和最小值相互对应,在一个周期中,最大值出现的次数是一般反馈曲线的2倍,幅值的变化也是一般反馈曲线的2倍。     

VLSI circuit reconstruction from mask topology

This paper discusses whether and how parasitic circuit elements must be included in the circuit simulator source file to obtain reliable simulation results. In particular, attention is paid to fabrication tolerances, wire capacitance (including fringing effects), wire resistance (dispersive line effects), coupling capacitances and capacitances associated with contacts and the aspect ratio of (non-rectangular) transistors.