Preparation of Phospholipid Multilayer Patterns of Controlled Size and Thickness by Capillary Assembly on a Microstructured Substrate

By dragging a phospholipid solution on microstructured silicon surfaces, phospholipid molecules are selectively deposited inside the microstructures to get regular phospholipid multilayer patterns of controlled thickness over a large scale (～cm²). By varying the dragging speed, the thickness of the patterns varies between 28 and 100 nm on average (7 to 25 bilayers). Electroswelling of phospholipid multilayer patterns leads to the formation of giant liposomes of controlled size and narrow size distributions.     

Mesostructured Thin Films as Responsive Optical Coatings of Photonic Crystals

A synthetic route is presented to attain high‐optical‐quality multilayered structures that result from coupling ordered mesoporous titanium oxide thin films to the surface of a dense one‐dimensional photonic crystal. Such architectures present spectrally well‐defined photon resonant modes localized in the outer coating that finely respond to physicochemically induced modifications of its pore volume. The potential of these porous coatings in detection of environmental changes through variations of the photonic response of the ensemble is demonstrated by performing isothermal optical reflectance measurements under controlled vapor‐pressure conditions.     

TiN／Ag多层膜的生物相容性研究

使用离子束辅助沉积（IBAD）的方法，在医用不锈钢317L的基底上制备TiN／Ag多层膜．在TiN／Ag多层膜具有良好的抗茵性和抗腐蚀性的研究基础上，通过细胞毒性试验和溶血试验评价了TiN／Ag多层膜的生物相容性．试验结果表明：TiN／Ag多层膜样品的细胞毒性等级在0～1之间；溶血率〈5％，符合生物医学材料的标准．这些说明TIN／Ag多层膜不仅具有抗菌性和抗腐蚀性，而且具有良好的生物相容性．     

Non‐Volatile ReRAM Devices Based on Self‐Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non‐volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re‐writable, bistable, transparent, and flexible solution‐processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single‐ or multi‐component‐based multilayers composed of positively charged GO (N‐GO(+) or NS‐GO(+)) with/without negatively charged GO(‐) using layer‐by‐layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi‐component active layer Au/[N‐GO(+)/GO(‐)]_n/Al/PES shows higher ON/OFF ratio of ≈10⁵ with switching voltage of ?1.9 V and higher retention stability (≈10⁴ s), whereas the device based on single component (Au/[N‐GO(+)]_n/Al/PES) shows ≈10³ ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi‐component‐based device are attributed to a higher coating surface roughness. The Au/[N‐GO(+)/GO(–)]_n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈10⁹) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO‐based solutions. It is found that the devices containing MnO₂ in the dielectric layer do not improve the ReRAM performance.     

Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co‐CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au‐sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O‐implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring‐magnet‐type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co‐CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.     

Structure, hardness and thermal stability of TiAlN and nanolayered TiAlN/CrN multilayer films

TiAlN films were deposited on silicon (1 1 1) substrates from a TiAl target using a reactive DC magnetron sputtering process in Ar+N₂ plasma. Films were prepared at various nitrogen flow rates and TiAl target compositions. Similarly, CrN films were prepared from the reactive sputtering of Cr target. Subsequently, nanolayered TiAlN/CrN multilayer films were deposited at various modulation wavelengths (Λ). X-ray diffraction (XRD), energy dispersive X-ray analysis, nanoindentation and atomic force microscopy were used to characterize the films. The XRD confirmed the formation of superlattice structure at low modulation wavelengths. The maximum hardness of TiAlN/CrN multilayers was 3900 kg/mm², whereas TiAlN and CrN films exhibited maximum hardnesses of 3850 and 1000 kg/mm², respectively. Thermal stability of TiAlN and TiAlN/CrN multilayer films was studied by heating the films in air in the temperature range (T_A) of 500-900 °C for 30 min. The XRD spectra revealed that TiAlN/CrN multilayers were stable up to 800 °C and got oxidized substantially at 900 °C. On the other hand, the TiAlN films were stable up to 700 °C and got completely oxidized at 800 °C. Nanoindentation measurements performed on the films after heat treatment showed that TiAlN retained a hardness of 2200 kg/mm² at T_A=700 °C and TiAlN/CrN multilayers retained hardness as high as 2600 kg/mm² upon annealing at 800° C.     

Giant dielectric phenomenon of Ba0.5Sr0.5TiO3/CaCu3Ti4O12 multilayers due to interfacial polarization for capacitor applications

Ba_0.5Sr_0.5TiO₃/CaCu₃Ti₄O₁₂ (BST/CCTO) multilayers with different stack sequences were deposited on LaNiO₃(LNO)/SiO₂/Si substrates by a sol-gel process. The dielectric properties of BST/CCTO multilayers are significantly affected by the deposition sequence, the layer thickness and the impurities, effects that are interpreted using the Maxwell-Wagner interfacial polarization model. Impurities are generated by elemental interdiffusion at the interfaces of BST/CCTO, and less at the interfaces of BST/LNO and CCTO/LNO. The dielectric permittivity of the CCTO/BST/LNO/SiO₂/Si sample reaches 352,200 at 10 kHz, and stabilizes above 20,000 in the range of 100 kHz to 1 MHz. This work demonstrates an effective approach to enhance dielectric properties for film capacitor applications by constructing multilayers with specific deposition sequences and layer thicknesses.     

High-Q and temperature-stable microwave dielectrics in layer cofired Zn1.01Nb2O6/TiO2/Zn1.01Nb2O6 ceramic architectures

A multilayer cofired architecture was proposed and demonstrated to achieve high-Q and temperature-stable microwave dielectrics in a derived system, Zn_1.01Nb₂O₆-TiO₂. This approach could effectively allow the chemical reactions between Zn_1.01Nb₂O₆ and TiO₂ occur at a rather narrow area (~12 μm), the interfaces of heterogeneous layers, where the diffusion of Zn, Nb, and Ti could be observed. Such interfaces could act as the in situ “glues” to connect each layer well. The effects of stacking scheme and TiO₂ content on the microwave dielectric properties of layered architectures were investigated systematically. The resonant frequency, Q-factor, and electric field distribution were reported using the eigenmode solver of high-frequency structure simulator. Among the available layer architectures, the optimized microwave dielectric characteristic was observed in Zn_1.01Nb₂O₆/TiO₂/Zn_1.01Nb₂O₆ stacked with 0.058 mol TiO₂ (~1.84 vol%). The τ_f can be effectively tuned to approximately +0.53 ppm/°C, and importantly, a high Q × f value ~99 500 GHz together with ε_r ~26.8 was achieved. This design could be beneficial for opening up new ways to develop high-performance microwave dielectrics based on current material systems and therefore to meet with the high requirements for 5G wireless communication components and multilayer packing technology.     

Development of an Electrodeposited Nanomold from Compositionally Modulated Alloys

Electrodeposited multilayers of NiCu/Cu and NiFeCu/Cu were examined for nanoimprinting applications. Layer sizes on the order of 100 nm were deposited and the copper layer etched. Current efficiency and layer composition of electrolytes having different pH values were examined utilizing a rotating disk electrode. Due to large grain growth in the NiCu/Cu system, the bilayers resulted in a macroscopic waviness of the layers. Adding Fe in a small concentration successfully produced straight layers. As an example of the replication technique, the metal multilayer-etched stamp was used to cast the multilayer image in rubber and emboss it in Teflon^®.     

Perpendicular exchange bias of （Pt/Co）n/FeMn multilayers

(Pt/Co)n/FeMn multilayers with perpendicular anisotropy (PA) were prepared by magnetron sputtering with Pt as the buffer layer and the capping layer. The dependence of perpendicular exchange bias (PEB), Hex, on the thickness of the FeMn antiferromagnet (AFM) layer is similar to that of in-plane exchange bias. The value of Hex for the (Pt/Co)3/FeMn multilayer reaches 22.3 kA/m. A thin Pt spacer was inserted between the Co/FeMn interface to enhance PEB. The PEB reaches the largest at 39.8 kA/m when the thickness of the Pt spacer is 0.4 nm.