Structure, hardness and thermal stability of TiAlN and nanolayered TiAlN/CrN multilayer films

TiAlN films were deposited on silicon (1 1 1) substrates from a TiAl target using a reactive DC magnetron sputtering process in Ar+N₂ plasma. Films were prepared at various nitrogen flow rates and TiAl target compositions. Similarly, CrN films were prepared from the reactive sputtering of Cr target. Subsequently, nanolayered TiAlN/CrN multilayer films were deposited at various modulation wavelengths (Λ). X-ray diffraction (XRD), energy dispersive X-ray analysis, nanoindentation and atomic force microscopy were used to characterize the films. The XRD confirmed the formation of superlattice structure at low modulation wavelengths. The maximum hardness of TiAlN/CrN multilayers was 3900 kg/mm², whereas TiAlN and CrN films exhibited maximum hardnesses of 3850 and 1000 kg/mm², respectively. Thermal stability of TiAlN and TiAlN/CrN multilayer films was studied by heating the films in air in the temperature range (T_A) of 500-900 °C for 30 min. The XRD spectra revealed that TiAlN/CrN multilayers were stable up to 800 °C and got oxidized substantially at 900 °C. On the other hand, the TiAlN films were stable up to 700 °C and got completely oxidized at 800 °C. Nanoindentation measurements performed on the films after heat treatment showed that TiAlN retained a hardness of 2200 kg/mm² at T_A=700 °C and TiAlN/CrN multilayers retained hardness as high as 2600 kg/mm² upon annealing at 800° C.     

流动式单电解槽电结晶制[Co/Pt]n(n≥200)金属多层膜的研究

采用电化学结晶的方法，在硼酸系流动式单电解槽中成功制得[Co／Pt]200多层膜。通过低角度X射线衍射(LXRD)证实了多层膜结构的存在．中角度X射线衍射(MXRD)则证明了Co—Pt界面上有CoPt3化合物的存在．首次确认了用电结晶法所得的[Co／Pt]n多层膜中存在CoPt3化合物的事实。     

TiN/NbN纳米多层薄膜的交变应力场和超硬效应

为了研究纳米多层薄膜的超硬效应 ,采用反应溅射法制备从 1 4nm至 2 7nm不同调制周期的一系列TiN/NbN纳米多层膜。高分辨电子显微镜对薄膜的调制结构和界面生长方式的观察发现 ,TiN/NbN膜具有很好的调制结构 ,并呈现以面心立方晶体结构穿过调制界面外延生长的多晶超晶格结构特征。显微硬度测量表明 ,TiN/NbN纳米多层膜存在随调制周期变化的超硬效应。薄膜在调制周期为 8 3nm时达到HK39 0GPa的最高硬度。分析认为 ,两种不同晶格常数的晶体外延生长形成的交变应力场 ,对材料有强化作用 ,这是TiN/NbN纳米多层膜产生超硬效应的主要原因     

中非铜矿带多层位成矿特征及成因

中非铜矿带位于刚果(金)—赞比亚的Lufilian造山带,新元古界加丹加超群发育有大量的沉积岩容矿层状铜矿(SSC),为了解铜矿床的成矿特征和矿床成因,对矿床地质特征进行总结,发现中非铜矿带主要为还原相型和砂岩型层状铜矿床,具有明显的多层位层控特征.其中加丹加铜钴矿带(KCB)盛产还原相型铜矿床,主要赋存于Roan群M...     

电沉积Ni80Fe20/Cu纳米多层膜及其巨磁电阻效应

采用单槽控电位双脉冲技术在n-Si（111）晶面上制备了［Ni₈₀Fe₂₀/Cu］_n多层膜,用SEM观测了多层膜的断面形貌,利用X射线衍射（XRD）表征了多层膜的超晶格结构。采用四探针法研究了多层膜的巨磁电阻（GMR）性能,结果表明,多层膜的GMR值随着Cu层厚度的变化发生周期性振荡,随着NiFe层厚度的增加先增大后减小;当样品结构为［NiFe（1.6 nm）/Cu（2.6 nm）］₈₀时,GMR值可达6.4%;多层膜的最低饱和磁场仅为750Oe。磁滞回线测试结果表明,反铁磁耦合多层膜具有较小的矩形比,更适宜作为磁头材料。     

Effect of number of layers on erosion,corrosion, and wear resistance of multilayer Cr–N/Cr–Al–N coatings on AISI 630 stainless steel

In the present study, multilayered Cr–N/Cr–Al–N coatings were prepared by cathodic arc physical vapor deposition (PVD) with different numbers of layers and the same total thickness on AISI 630 steel in an attempt to improve the wear and erosion–corrosion resistance. Structural analysis of the coatings was performed by field scanning electron microscopy, X-ray diffraction (XRD), and energy-dispersive spectroscopy. Depth profiles and roughness parameters of worn surfaces were calculated after erosion and wear tests. XRD indicated that nitride compounds were formed in multilayer coatings by PVD. The Cr–N/Cr–Al–N coating exhibited superior corrosion resistance compared with AISI 630 substrate. The erosion–corrosion results revealed that the smoothest wear track with the minimum erosion rate and wear depth was obtained for five- and seven-layered coatings. The failure mechanism of the bare substrate was influenced by plastic deformation via cutting and plowing, while the failure mechanism for coated samples was chipping and delamination. According to the wear results, the multilayer coatings showed a lower friction coefficient and better surface morphology that demonstrated their high ability for wear protection.     

计算机信息防泄复合薄膜屏蔽材料设计─Ⅰ．理论部分

本文在计算机信息防泄复合薄膜屏蔽材料研究中，引入材料设计的思想，运用传输线的理论模型，借助于计算机，对不同材料进行多层屏蔽设计。计算结果表明，非磁性导体间的多层复合，屏蔽效果随分层数的增加而趋于一极大值，但变化值很小；磁性导体的多层复合，屏蔽效果与分层数存在着最佳的匹配关系，并随频率、膜厚、成分变化而变化；金属与铁氧体的复合，仅当屏蔽衰减较大时（膜较厚），铁氧体对屏蔽才起明显作用，分层才有意义。     

Synthesis and characterization of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique

We have fabricated high-quality <001> textured Pb(Zr_0.54Ti_0.46)O₃ (PZT) thin films on (00l)Si with interposing <001> textured YBa₂Cu₃O_7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ, = 248 nm, τ = 20 nanosecs). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9 × 10⁻⁴ Torr) at 775°C on (001)Si substrate having <001>YSZ // <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mTorr) at 650°C. The temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4-0.6 Torr, respectively. The laser fluence to deposit this multilayer structure was 2.5-5.0 J/cm². The <001> textured perovskite PZT films showed a dielectric constant of 800-1000, a saturation polarization of 37.81 μC/cm², remnant polarization of 24.38 μC/cm² and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.     

Melting behavior and superheating capacity of REBa2Cu3Oy films with nano‐layer buffered structures

Using high temperature‐optical microscopy, in situ investigations were conducted on melting and superheating behaviors of REBa₂Cu₃O_7?δ (RE123, RE = Nd, Gd) films, which were grown on nano‐layer buffered substrates. The results demonstrate that all buffered RE123 films have improved crystallinity and in‐plane alignments, leading to the higher superheating capability. In the first case, due to its good lattice match with the buffer material of Y123, the Nd123 film with the minimal extrinsic property grew from the superior interface. In the second circumstance, because of its stronger chemical bonding with the buffer layer of Gd₂O₃, the pure c‐axis oriented Gd123 film was fabricated. Moreover, the optimized thickness of buffer layer plays an important role in reducing interface energy of RE123 films and enhancing its superheating capacity.     

窄带Mo／Si多层膜反射镜

设计并制备了窄带M o/S i多层膜反射镜。利用高反射级次和减小M o层厚度两种方法减小M o/S i多层膜反射镜光谱宽度。对M o层厚度分别为2 nm和3 nm的M o/S i多层膜,设计了反射级次分别从1到6的多层膜系。制备方法采用直流磁控溅射技术,在国家同步辐射光谱与计量站上测试。结果表明,带宽随着反射级次增加而减少,在同一反射级次,M o层厚度为2 nm的多层膜反射光谱带宽较小。