ICT在弹药检测中的应用

探讨了采用ICT技术对弹药进行无损检测的可行性，介绍了ICT系统的组成，重点讨论了提高ICT成像质量所采取的措施，给出了弹药中缺陷的CT扫描图像。结果表明ICT技术具有其它常规检测方法无法比拟的优越性，对弹药有很好的检测效果。     

Infrared thermography for inspecting the adhesion integrity of plastic welded joints

This work aim at developing a non-destructive tool for the evaluation of bonded plastic joints. The paper examines infrared thermographic transmission and reflection mode imaging and validates the feasibility of the thermal NDT approach for this application. Results demonstrate good estimation performance for adhesion integrity, uniformity and bond strength using a transmission mode application of infrared thermography. In addition, results from a pulsed infrared thermographic application using a modified dynamic infrared tomography scheme show good performance for estimating adhesion layer thickness mapping and detecting delaminations.     

网络链路性能参数估计的层析成像方法综述

网络层析成像能够在网络内部节点不提供测量协作的情况下,根据端到端的测量结果,间接地估计网络内部链路性能参数,是一种重要的网络测量手段,能直接指导网络管理和网络优化,目前受到国内外学术界和工业界广泛的关注.在广泛收集国内外资料的基础上,首先总结了目前网络层析成像使用的主要端到端测量方法和技术;再根据不同参数对链路性能刻画程度的不同,将链路性能参数的网络层析成像方法分为两类:定量参数推断方法和定性参数推断方法;然后,针对不同类型参数的估计问题,概括分析了现有算法的特点;最后指出该类方法未来的研究方向与潜在的应用前景.     

基于自适应阈值和区域生长的SD-OCT糖网图像亮斑分割

硬性渗出是糖尿病性视网膜病变的一个比较显著的症状,频域光学相干断层视网膜图像中的高信号亮斑与渗出有着密切的联系。为了研究渗出与病变的关系,有必要找到一种提取亮斑的方法。但是,目前关于糖网图像亮斑提取的研究还非常少。首先运用层分割算法限制亮斑所在区域,然后采用自适应阈值法确定种子集合,最后使用基于人类视觉特性的区域生长方法提取出亮斑。实验结果表明,本方法可以较准确地分割出糖网图像中的亮斑。     

电磁波层析成像反演射线路径的探讨

在电磁波 CT 测试中,发射、接收探头间的电磁波射线发射点、接收点位置决定反演后成果数据记录点的位置。为了确定电磁波仪发射、接收探头记录点位置,对探头分别进行钢管屏蔽实验,实验表明电磁波仪工作时电磁波能量主要集中在两探头的馈电点及天线末端间近似于平行四边形的区域内,不宜直接地简化为一条直线,将平行四边形区域简化为4条线段进行电磁波层析成像反演计算更符合实际情况。在此基础上,提出对电磁波 CT 数据采取4条射线路径单独反演后,再将4个结果按综合平均的方法进行处理。将此种处理方法应用于武汉地铁岩溶勘察数据处理中,并与目前基于1条射线的反演处理方法进行对比、验证。对比剖面反演数据结果表明,在采用同一反演软件条件下4条射线路径综合反演法精度优于1条射线反演法。     

In-focus electron microscopy of frozen-hydrated biological samples with a Boersch phase plate

We report the implementation of an electrostatic Einzel lens (Boersch) phase plate in a prototype transmission electron microscope dedicated to aberration-corrected cryo-EM. The combination of phase plate, C_s corrector and Diffraction Magnification Unit (DMU) as a new electron-optical element ensures minimal information loss due to obstruction by the phase plate and enables in-focus phase contrast imaging of large macromolecular assemblies. As no defocussing is necessary and the spherical aberration is corrected, maximal, non-oscillating phase contrast transfer can be achieved up to the information limit of the instrument. A microchip produced by a scalable micro-fabrication process has 10 phase plates, which are positioned in a conjugate, magnified diffraction plane generated by the DMU. Phase plates remained fully functional for weeks or months. The large distance between phase plate and the cryo sample permits the use of an effective anti-contaminator, resulting in ice contamination rates of <0.6 nm/h at the specimen. Maximal in-focus phase contrast was obtained by applying voltages between 80 and 700 mV to the phase plate electrode. The phase plate allows for in-focus imaging of biological objects with a signal-to-noise of 5-10 at a resolution of 2-3 nm, as demonstrated for frozen-hydrated virus particles and purple membrane at liquid-nitrogen temperature.     

Atom probe tomography and transmission electron microscopy characterisation of precipitation in an Al-Cu-Li-Mg-Ag alloy

State-of-the art atom probe tomography (APT) combined with transmission electron microscopy (TEM) were used to investigate the microstructure at different stages of the ageing process of an alloy of composition (at%) Al-1.68%Cu-4.62%Li-0.33%Mg-0.1%Ag. These alloys were shown to exhibit a complex microstructure of T₁ plates and several metastable phases, including θ′ and S. We will highlight the early stages of clustering, precipitate interactions and possible solute segregation at the matrix/precipitate interfaces and detail the chemical composition of the different phases.     

Fabrication and characterization of APT specimens from high dose heavy ion irradiated materials

The next generations of advanced energy systems will require materials that can withstand high doses of irradiation at elevated temperatures. Therefore, a methodology has been developed for the fabrication of high-dose ion-irradiated atom probe tomography specimens at a specific dose with the use of a focused ion beam milling system. The method also enables the precise ion dose of the atom probe tomography specimen to be estimated from the local concentration of the implanted ions. The method has been successfully applied to the characterization of the distribution of nanoclusters in a radiation-tolerant 14YWT nanostructured ferritic steel under ion irradiation to doses up to 400 displacements per atom.     

Atom-probe for FinFET dopant characterization

With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D.In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10° and 45°) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values.     

A method to determine the local surface profile from reconstructed exit waves

Reconstructed exit waves are useful to quantify unknown structure parameters such as the position and composition of the atom columns at atomic scale. Existing techniques provide a complex wave in a flat plane which is close to the plane where the electrons leave the atom columns. However, due to local deviation in the flatness of the exit surface, there will be an offset between the plane of reconstruction and the actual exit of a specific atom column. Using the channelling theory, it has been shown that this defocus offset can in principle be determined atom column-by-atom column. As such, the surface roughness could be quantified at atomic scale. However, the outcome strongly depends on the initial plane of reconstruction especially in a crystalline structure. If this plane is further away from the true exit, the waves of the atom columns become delocalized and interfere mutually which strongly complicates the interpretation of the exit wave in terms of the local structure. In this paper, we will study the delocalization with defocus using the channelling theory in a more systematic way.